SILICON PLANAR POWER DARLINGTON TRANSISTORS TIP142T NPN
TIP147T PNP
TO-220
Plastic Packa
e
For use in Power Linear and Switchin
Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION SYMBOL VALUE UNIT
Collector Base Voltage VCBO 100 V
Collector Emitter Voltage VCEO 100 V
Emitter Base Voltage VEBO 5.0 V
Collector Current IC10 A
Collector Peak Current (Repetitive) ICM 20
Base Current IB0.5 A
Power Dissipation @ Tc=25ºC Ptot 80 W
Operating & Storage Junction Tj, Tstg - 65 to +150 ºC
Temperature Range
THERMAL RESISTANCE
Junction to Case Rth (j-c) 1.0 ºC/W
ELECTRICAL CHARACTERISTICS (Tc=25ºC Unless Otherwise Specified)
DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT
Collector Cut off Current ICBO VCB=100V, IE=O 1.0 mA
Collector Cut off Current ICEO VCE=50V, IB=0 2.0 mA
Emitter Cut off Current IEBO VEB=5V, IC=0 2.0 mA
Collector Emitter (sus) voltage VCEO *I
C=30mA, IB=0 100 V
Collector Emitter Saturation Voltage VCE
sat
*I
C=5A, IB=10mA 2.0 V
IC=10A, IB=40mA 3.0
Base Emitter on Voltage VBE
on
* IC=10A, VCE=4V 3.0 V
DC Current Gain hFE *I
C=5A, VCE=4V 1000
IC=10A, VCE=4V 500
SWITCHING TIME
Turn on time ton 0.9
s
Ic=10A, IB1=IB2= - 40mA,
Turn off time toff RL=3Ω4.0
s
*Pulsed : Pulse duration =200
s, Duty Cycle=1.5%
Continental Device India Limited Data Sheet Page 1 of 3
Continental Device India Limited
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