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THERMAL DATA
Rthj-case
Rthj-amb Thermal Resistance Junction-Case Max
Thermal Resistance Junction-Ambient Max 83.3
300
oC/W
oC/W
ELE CT RICAL CHAR ACT ERISTI CS (Tcase = 25 oC unless otherwise specif ied)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICBO Collector Cut-off
Current (IE = 0) VCB = 90 V 10 nA
V(BR)CBO Collector-Base
Breakdown Voltage
(IE = 0)
IC = 100 µA120 V
V(BR)CEO∗Collector-Emitter
Breakdown Voltage
(IB = 0)
IC = 30 mA 80 V
V(BR)EBO Emitter-Base
Breakdown Voltage
(IC = 0)
IE = 100 µA7V
I
EBO Emitter Cut-off
Current (IE = 0) VEB = 5 V 10 nA
VCE(sat)∗Collector-Emitter
Saturation Voltage IC = 50 mA IB = 5 mA
IC = 150 mA IB = 15 mA 1.2
5V
V
VBE(sat)∗Base-Emitter
Saturation Voltage IC = 50 mA IB = 5 mA
IC = 150 mA IB = 15 mA 0.9
1.3 V
V
hFE∗DC Current Gain IC = 100 µA VCE = 10 V
IC = 10 mA VCE = 10 V
IC = 150 mA VCE = 10 V
20
35
40 120
hfe∗Small Signal Current
Gain IC = 50 mA VCE = 10 V
f = 20 MHz 2.5
CCBO Collector-Base
Capacitance IE = 0 VCB = 10 V f = 1 MHz 15 pF
CEBO Emitter-Base
Capacitance IC = 0 VEB = 0.5 V f = 1 MHz 85 pF
∗ P ulsed: P ulse durat ion = 300 µs, d uty cycle ≤ 1 %
2N720A
2/4
Obsolete Product(s) - Obsolete Product(s)