LLL 7ac D Bf vieses? ooo7L37 1 &f 2N 2322>2N 2329 Ba TD 5001 $- TD 6001S SENSITIVE GATE THYRISTORS THYRISTORS SENSIBLES 7T8C 07637 _ DB Operates directly from low signal (sensitive gate). VpRM = VRRM up to 600 V. Glass passivated chips. High stability and reliability. e Fonctionne directement a partir dun faible signal {g&chette sensible). e VoRM = VarM fusqua 600 V. Pastilles glassives. e@ Grande stabilit des caractristiques. 7 25-f] ITIAMS) = 1.6 A/Te = 85C VpRM 2V< = VRRM igT 02mA <600V Case Boltier :TO 39 metal (CB-7) ABSOLUTE RATINGS (LIMITING VALUES) VALEURS LIMITES ABSOLUES D'UTILISATION Symbol! Value Unit RMS on-state current" Courant efficace 4 [tat passant* IT(RMS) et 15 oc c= Mean on-state current* Courant moyen 4 tat passant" ITiAV) CT, 1 B5C A Non repetitive surge peak on-state current** Courant non rptitif de surcharge crte accidentelle 4 Itat passant** 15,7{t = 8,3 ms) 15 {t= 10 ms} @ Tj < 125C ITSM ITSM >> 12t for fusing Valeur de fa constante ft 12 1,12 {t = 10 ms) As @ Tj < 125C Critical rate of rise of on-state current*** Vitesse critique de croi: du co a tat p pee di/dt . 50 Alps Storage and operating junction temperatures Tempratures extrmes de stockage et de jonction en fonctionnement Tstg 55, + 150 C Ty. 55, + 125 % @Tj = 125C 2N 2N 2N Rox = 1k 7322 | 2323 | 2324 2N 2325 2N 2N 2N 2N TD TD 2326 2327 2328 2329 | 5001S | 6001S VpRM = Varn {V) 25 50 100 150 200 250 300 400 500 600 Therma! resistances Rsistances thermiques Symbol Value Unit ' Junction to case doncetion-boitier Junction to ambient Jonction-ambiante Rthlj-c) 20 C/W 150 Cw Rth{j-a) *Single phase circuit, 180 conduction angle *Gircuit monophas, angle de conduction 180 =1g=10mA dig/dt = 0,1 A/us **Half-sine wave **Demi-onde sinusoldale July 1984 - 1/2 THOMSON SEMICONDUCTORS 45, avenue de l'Europe - 78140 VELIZY - France Tl. :946.97.19 / Tlex : 698 866 F g.\ THOMSON 59 @* COMPONENTSAare S G S-THOMSON 7ac > fj vse9237 ooo7n3a 3 ff - . 2N 2322> 2N 2329 TD &001S - TD 6001S . 7-ags-// > GATE CHARACTERISTICS (Maximum vatues)} CARACTERISTIQUES DE GACHETTE (Vatleurs maximates} PGMm = 1 W (tp = 10 ys) IFGM = 100 mA {tp = 10 ys} VRGM = 5V Patav) = 0,1 W VEGM = 10 V (tp = 104s} ELECTRICAL CHARACTERISTICS CARACTERISTIQUES ELECTRIQUES Value Symbol Unit Test conditions min typ max I6T 0,1 0,2 mA T= 26C Vp = 12V RL = 339 tp #20 ys VGT 0,7 0,8 Vv T= 256C Vp = 12 V RL = 332 tp #20 ys Vep 0,1 Vv Tj = 125C Vp = VDRM RL = 3,3 kQ Rex = 1K lH i 2 mA T= 26C It = 100 mA Rek = 1 Kf VTM 1,2 2 Vv Tj = 25C ItM=1A tp = 10 ms IDRM 0A mA Tj = 125C VprM specified RGK = 1KQ IRRM 0,1 mA Ty = 125C VRRM specified ReK = 1K@ Tj= 25C IT=iA Vp = VDRM tat 1 Hs ig = 10mA dig/dt = 0,01 A/us Tj = 125C iT=1A Vr = 24V Vp = 0,67 VDRM tq 60 HS digidt = 30A/us dv/dt = 10 V/us Rex = 1Ka . Tj = 125C Linear slope up to 0,67 Vorm specified dv/dt 10 Vins } Gate open Rok = 1KQ *For higher guaranted values, please consult us. CASE DESCRIPTION DESCRIPTION DU BOITIER Pin Brochage Cooling method : by convection {method A) or conduction (method C) Marking ; type number Weight: 1,19 Polarity : anode to case 12,70 min. 0,407 0,508 U TO 39 metal (CB-7) 2/2 - THOMSON SEMICONDUCTORS 60