SEMICONDUCTORS INC Q5E D i 8136650 go00e58 ? i T-O7-19 Varactor Diodes 4N4786 to 1N4815 MINIMUM CAPACITANCE CAPACITANCE CAPACITANCE | MAXIMUM | BREAKDOWN TYPE @-4Vdc RATIO RATIO WORKING VOLTAGE 1 MHz Q.1V to 4V MWV_ to 4V VOLTAGE | Ip=100uA pF Vdc Vdc =k. wad . aR BRS <4NA793. 2 IN4796 Package Styl@--+-ceeseceees ee encnes DO-7 or DO-14 Forward Voltage Drop @100mA.-.----.+-. 1.0Vdc max D.C. Power Dissipation @ 25C.......... 500mW max Operating Temperature............ -65C to +150C Storage Temperature.........0s00. -65C to +150C Quality Factor (Q) VR=4Vdc3 FHIMHZ.. 0. cece cece e cece e eee 750 min VR=4Vdc3 F=50MHZ- ++ scree ere ee eee ee eees 15 min Reverse Current @ MWV...............000. 5nA max Reverse Current @ MWV (150C)........... 5uA max Capacitance Tolerance: Standard Device. ...... cece cece eect eee reece +20% SUFFIX Acree csacccc cee eeececteceneeneenecs +10% SUFFIX Bicccceccccccceceacestceseeerenesees +5% SUPFIX Corse cece ence cece cece ectereetenensas 2% SUFFIX Dives cc ac cece rece ene e eect ee ee ee nnene +1%SEMICONDUCTORS INC OFE D 5 8136650 0000254 4 i Varactor Diodes Tuning ELECTRICAL CHARACTERISTICS 4 Ta=25C T-O7-17 T-f/- 27 DEVICE TYPE MIN. CAPACITANCE @ 4Vdc TYP. MAX. CAPACITANCE RATIO C4/C60 FIGURE OF MERIT Q *ENSLI9 -] ~ IN5I394 Pa = ang6at" 12 Package Style... cece ccc ce ces cecceseececens DO-7 D.C. Power Dissipation @25C........ . 400nW max Operating Temperature........... -65C to +150C Storage Temperature....... eeeees -65C to +150C Reverse Current @ MWV........ccaceaees -20nA max Reverse Current @ MWV (150C) seeeecoece 20uA max Capacitance Tolerance: Standard Device.....cccceeccaes eseees o oe et20% SUTFIX Accecccccccsncacee sane e een ee ecees +10% SuffIX Bice sscccccccesaee setae eeeees ce eaee +5%