9 NS DUAL DIFFERENTIAL AMPS (Cont.) NPN Transistors heE1 |] von -v AVeeE1 - VBE2 Vero | Yceo | Yeso| cao y h \ h BE, BED AT Cob iT NF Test Process Type wv) wv) vi | inay @ CB FE c Fe2 (mV) , (pF) (He) | 3B) Pion Ne No. Style Min Min Min Max (v) Min Max (mA} {%) Max tuv/C) Max Min Max | Max onditio - Max Max 22978 | TO-71 60 60 6 2 5 60 240 0.01 5 6 60 4 3 07 100 01 10 3 10 4 2 150 1 5 2n2979 | TO-71 60 60 6 2 45 150 600O001 5 6 60 3 3 07 225 0.1 10 3 10 3 2 300 1 5 23587 | TO-78 60 45 5 10 40 50 ot 8 80 200] 10 3 07 80 500 4 $20 20 20 2N3680 | TO-78 60 50 6 10 45 150 6000.01 io 3 5 6 so 180] 3 2 07 225 01 300 1 23907 | TO-78 60 45 6 10 45 60 300 001 2 6 60 240] 4 3 07 70 500 0.1 10 1 5 120 1 25 2n3908 | TO-78 60 60 6 2 45 100 500s 0.01 2 6 60 240] 3 3 07 125 800 s*O 10 1 5 200 1 25 ND5700 45 45 6 0.2 50 200 1600 0.01 5 05 2 3 3 5 570 200 2000 1 200 = 2000s ND5701 45 45 6 0.2 50 200 1500 0.01 10 1 5 3 3 5 570 200 2000 1 200 2000s ND5702 45 45 6 0.2 50 200 1500 0.01 10 2 10 3 3 5 570 200 2000 1 200 2000':5 Lo. Test Conditions: 1. te = 10 uA, VcE = BY, 3. I = 10 uA, Voce = SV, Rg = 10kQ, f= 1 kHz Rg = 10k2,f = 1 kHz W = 200 H 2. Ig = 10 HA, VE = 5Y, BW = 200 Hz Rg = 10k, BW= 15.7 kHz 4. Ic = 10 2A, VcE = 5V, Rg = 10 kf, f = 100 Hz Iq = 100 uA, Vee = BV, Rg = 10 k, BW = 15.7 kHz *This parameter measured at frequency = 1 kHz. tT py = -55C to +128C.