http://www.fujielectric.com/products/semiconductor/ 1MBI1200UE-330 IGBT Modules IGBT MODULE (U series) 3300V / 1200A / 1 in one package Features AISiC Baseplate AIN DCB substrate CTI 600 Viso 6000 Vac Low Inductance module structure Applications Traction drives Industrial motor drives Wind power Chopper Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25C unless otherwise specified) Items Collector-Emitter voltage Gate-Emitter voltage Collector current Symbols VCES VGES Conditions Ic Continuous Ic pulse 1ms -Ic -Ic pulse Collector power dissipation PC Junction temperature Tj Storage temperature Tstg Isolation voltage Between terminal and copper base (*1) Viso TC =25C TC =80C TC =25C TC =80C 1ms 1 device AC : 1min. AC, Q10pC (acc. To IEC 1287) Partial discharge extinction voltage Ve Screw torque (*2) Mounting Main Terminals Sense Terminals Maximum ratings 3300 20 2000 1200 4000 2400 1200 2400 14.7 150 -40 ~ +125 6.0 Units V V 2.6 kVAC 5.75 10 2.5 N*m A kW C kVAC Note *1: All terminals should be connected together when isolation test will be done. Note *2: Recommendable value : Mounting : 4.25-5.75 N*m (M6), Main Terminal : 8-10 N*m (M8), Sense Terminal : 1.7-2.5 N*m (M4) 1 7547 SEPTEMBER 2013 1MBI1200UE-330 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Electrical characteristics (at Tj= 25C unless otherwise specified) Items Symbols Conditions Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage ICES IGES VGE (th) VCE (sat) (main terminal) VCE (sat) (chip) Cies ton tr toff tf VF (main terminal) VF (chip) trr R lead VGE = 0V, VCE = 3300V VCE = 0V, VGE = 20V VCE = 20V, IC = 1200mA Collector-Emitter saturation voltage Input capacitance Turn-on time Turn-off time Forward on voltage Reverse recovery time Lead resistance, terminal-chip Tj =25C Tj =125C Tj =25C Tj =125C = 0V, VCE = 10V, f = 1MHz VGE = 15V IC = 1200A VGE VCC = 1800V, IC = 1200A VGE = 15V, Tj = 125C Rg = 1.6 VGE = 0V IF = 1200A IF = 1200A Tj =25C Tj =125C Tj =25C Tj =125C Characteristics min. typ. max. 1.0 4800 6.0 6.75 7.5 2.43 2.66 3.15 3.45 2.28 2.51 3.00 3.30 240 3.40 2.30 2.40 0.40 2.73 2.96 2.95 3.25 2.58 2.81 2.80 3.10 0.85 0.124 - Units mA nA V V nF s V s m Thermal resistance characteristics Items Symbols Thermal resistance (1device) Rth(j-c) Contact thermal resistance (1device) Rth(c-f) Conditions IGBT FWD with Thermal Compound (*3) Note *3: This is the value which is defined mounting on the additional cooling fin with thermal compound. 2 Characteristics min. typ. max. 8.5 17.0 4.0 - Units C/kW 1MBI1200UE-330 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Tj= 25 / chip Collector current vs. Collector-Emitter voltage (typ.) Tj= 125C / chip 15V 2400 VGE=20V 2400 12V 10V 1600 1200 800 8V 400 0 0 1 2 3 4 1600 10V 1200 800 8V 400 0 5 0 1 Collector-Emitter voltage : VCE [V] 3 4 5 Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25C / chip 10 Collector - Emitter voltage : VCE [ V ] 2400 2000 Collector current : Ic [A] 2 Collector-Emitter voltage : VCE [V] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip 1600 Tj=25 Tj=125 1200 800 400 0 12V 2000 Collector current : Ic [A] Collector current : Ic [A] 2000 15V VGE=20V 0 1 2 3 4 8 6 4 Ic=2400A Ic=1200A Ic= 600A 2 0 5 5 10 15 20 25 Gate - Emitter voltage : VGE [ V ] Collector-Emitter voltage : VCE [V] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25C Dynamic Gate charge (typ.) Vcc=1800V, Tj= 25C 1000.0 20 2000 100.0 Cres 10.0 1.0 Coes 0 10 20 5 0 2 4 6 8 10 Gate charge : Qg [ C ] 3 10 500 0 Collector-Emitter voltage : VCE [V] VGE 1000 0 30 15 1500 12 14 0 Gate-Emitter voltage : VGE [V] Cies Collector-Emitter voltage : VCE [V] Capacitance : Cies, Coes, Cres [ nF ] VCE 1MBI1200UE-330 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Switching time vs. Collector current (typ.) Vcc=1800V, VGE=15V, Rg=1.6, Tj= 25C Switching time vs. Collector current (typ.) Vcc=1800V, VGE=15V, Rg=1.6, Tj=125C 10000 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] 10000 toff ton 1000 tr tf 100 0 500 1000 1500 tr 1000 tf 0 1000 1500 2000 Collector current : Ic [ A ] Switching time vs. Gate resistance (typ.) Vcc=1800V, Ic=1200A, VGE=15V, Tj= 125C Switching loss vs. Collector current (typ.) Vcc=1800V, VGE=15V, Rg=1.6 5000 ton toff tr 1000 tf Eon 4000 1 2 3 4 5 6 7 8 9 10 Eon Eo 2000 Tj=25 1000 0 0 Eo Tj=125 3000 11 0 500 1000 1500 2000 Collector current : Ic [ A ] Gate resistance : Rg [ ] Reverse bias safe operating area (max.) Switching loss vs. Gate resistance (typ.) Vcc=1800V, Ic=1200A, VGE=15V, Tj= 125C VGE=15V, Tj=125 oC / chip 9000 3000 8000 7000 6000 Collector current : Ic [ A ] Switching loss : Eon, Eoff [ mJ/pulse ] 500 Collector current : Ic [ A ] Switching loss : Eon, Eoff [ mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] toff 100 2000 10000 100 ton Eon 5000 4000 Eoff 3000 2000 2000 1000 1000 0 0 0 1 2 3 4 5 6 7 8 9 10 11 0 1000 2000 3000 Collector - Emitter voltage : VCE [ V ] Gate resistance : Rg [ ] 4 4000 1MBI1200UE-330 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Switching loss vs. Collector current (typ.) Vcc=1800V, VGE=15V, Rg=1.6 Forward current vs. Forward on voltage (typ.) chip 2000 2400 Switching loss : Err [ mJ/pulse ] Forward current : IF [ A ] 2000 1600 Tj=25oC Tj=125oC 1200 800 400 0 1500 1000 Tj=25oC 500 0 0 1 2 3 Tj=125oC 4 0 500 Switching loss vs. Gate resistance (typ.) Vcc=1800V, IF=1200A, VGE=15V, Tj= 125C Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] Switching loss : Err [ mJ/pulse ] 10000 1500 1000 500 0 1 2 3 4 5 6 7 8 9 10 Tj=25oC 0 Tj=125oC Tj=125oC trr 100 11 Irr 1000 Gate resistance : Rg [ ] Tj=25oC 500 1000 1500 2000 Forward current : IF [ A ] FWD safe operating area (max.) Transient thermal resistance (max.) Tj=125oC 100.0 Thermal resistanse : Rth(j-c) [ C/kW ] 3000 2500 2000 IR [ A ] 2000 Reverse recovery characteristics (typ.) Vcc=1800V, VGE=15V, Rg=1.6 2000 1500 1000 500 0 1500 Forward current : IF [ A ] Forward on voltage : VF [ V ] 0 1000 0 500 1000 1500 2000 2500 3000 3500 FWD 10.0 IGBT 1.0 0.1 0.001 Collector - Emitter voltage : VCE [ V ] 0.010 0.100 Pulse width : Pw [ sec ] 5 1.000 1MBI1200UE-330 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Outline Drawings, mm Equivalent Circuit Schematic main collector sense collector gate sense emitter main emitter 6 1MBI1200UE-330 IGBT Modules http://www.fujielectric.com/products/semiconductor/ WARNING 1.This Catalog contains the product specifications, characteristics, data, materials, and structures as of September 2013. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sure to obtain the latest specifications. 2.All applications described in this Catalog exemplify the use of Fuji's products for your reference only. 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When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty. * Transportation equipment (mounted on cars and ships) * Trunk communications equipment * Traffic-signal control equipment * Gas leakage detectors with an auto-shut-off feature * Emergency equipment for responding to disasters and anti-burglary devices* Safety devices * Medical equipment 6. D o not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). * Space equipment * Aeronautic equipment * Nuclear control equipment * Submarine repeater equipment 7. C opyright (c)1996-2013 by Fuji Electric Co., Ltd. All rights reserved. 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