Diode ASl@YS pu Vp fo tr Cr Application Part No. (V} (mA) Max. Max. Package circuits (ns) (pF) DA227 80 100 4 - UM4 Fig.4 DAN202C 80 100 4 - SST Fig.1 DAN202K 80 100 4 = SMT Fig.1 DAN202U 80 100 4 = UMT Fig.1 DAN222 80 100 4 = EM3 Fig.1 DAP202C 80 100 4 = SST Fig.6 DAP202K 80 100 4 = SMT Fig.6 DAP202U 80 100 4 = UMT Fig.6 High-Speed DAP222 80 100 4 = EM3 Fig.6 Switching FMN1 80 25 4 - FMT Fig.2 UMN1 80 25 4 = UM5 Fig.14 FMP1 80 25 4 - FMT Fig.7 UMP1 80 25 4 - UM5 Fig.15 IMN10 80 100 4 = IMD Fig.3 IMN11 80 100 4 - IMD Fig.5 IMP14 80 100 4 = IMD Fig.8 UMP11 80 100 4 = UM6 Fig.17 UMN11 80 100 4 - UM6 Fig.16 DA106K 8 15 = - SMT Fig.9 DA106U 8 15 - _ UMT Fig.9 DA112 80 100 4 35 UMT Fig.11 DA113 80 100 4 3.6 UMT Fig.12 DA114 80 100 4 3.5 UMT Fig.10 DA115 80 100 4 3.5 UMT Fig.9 DA116 80 100 4 3.5 SMT Fig.11 DA118 80 100 4 3.5 SMT Fig.12 DA119 80 100 4 3.5 SMT Fig.9 DA120 80 100 4 35 EM3 Fig.11 DA121 380 100 4 3.5 EM3 Fig.10 : . DA122 80 100 4 3.5 EM3 Fig.9 2 Vrs Connected in series DA123 80 100 4 35 EM3 Fig.12 DA204K 20 100 = 4 SMT Fig.13 DA204U 20 100 - 4 UMT Fig.13 DA221 20 100 = 4 EM3 Fig.13 DAN212K 80 100 4 35 SMT Fig.10 DAN212C 80 100 4 3.5 SST Fig.10 DAN217 80 100 - 3.5 SMT Fig.13 DAN217C 80 100 3.5 SST Fig.13 DA223K 40 100 = 5.0 SMT Fig.13 DA223 40 100 - 5.0 EM3 Fig.13 DA226U 40 100 = 5.0 UMT Fig.13 rDA228K 80 100 - 5.0 SMT Fig.13 Note : Under development Internal circuit 1) aa @ Ga @ @ @ (M & Ok (3) @) a) G) Hu) KD ay) aK ay Ba @ Mea @ ws @ Ola @ a 3) (2) aya) @ GO @ a 1a @ a @) (2) C13) (2) @) 3 (3) (3) (3) (4) (64) (a) (5) KS) ) 6. Fig.t Fig.2 Fig.3 Fig.4 Fig.5 Fig.6 Fig.7 Fig.8 Fig.9 | Fig.10 | Fig.11 | Fig.12 | Fig.13 | Fig.14 | Fig.15 | Fig.16 | Fig.17 178 M@ 7828999 OO09b70 355