ZXMP3A16G
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ZXMP3A16G
ADVANCE INFORMATION
30V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS RDS(on) max ID max
TA = 25°C
(Notes 3)
-30V 45mΩ @ VGS = -10V -7.5A
70mΩ @ VGS = -4.5V -5.9A
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
and yet maintain superior switching performance, making it ideal for
high efficiency power management applications.
• Motor control
• DC-DC Converters
• Power management functions
• Relay and solenoid driving
Features and Benefits
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• “Green” component. Lead Free Finish / RoHS compliant
(Note 1)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT223
• Case Material: Molded Plastic, UL Flammability Classification
Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
• Weight: 0.112 grams (approximate)
Ordering Information (Note 1)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
ZXMP3A16GTA ZXMP3A16 7 12 1,000
ZXMP3A16GTC ZXMP3A16 13 12 4,000
Note: 1. Diodes, Inc. defines “Green” products as those which are RoHS compliant and contain no halogens or antimony compounds. All applicable RoHS
exemptions applied. Further information about Diodes Inc.’s “Green” Policy can be found on our website.
Marking Information
ZXMP = Product Type Marking Code, Line 1
3A16 = Product Type Marking Code, Line 2
ZXMP
3A16
Equivalent Circuit
D
S
G
Top View
SOT223
Pin Out - Top View
ZXMP3A16G
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Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol
V
alue Unit
Drain-Source voltage VDSS -30 V
Gate-Source voltage VGS ±20 V
Continuous Drain current VGS = 10V (Note 3) ID
-7.5 A
TA = 70°C (Note 3) -6.0
(Note 2) -5.4
Pulsed Drain current VGS = 10V (Note 4) IDM -24.9 A
Continuous Source current (Body diode) (Note 3) IS -3.2 A
Pulsed Source current (Body diode) (Note 4) ISM -24.9 A
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol
V
alue Unit
Power dissipation
Linear derating factor
(Note 2) PD
2.0
16 W
mW/°C
(Note 3) 3.9
31
Thermal Resistance, Junction to Ambient (Note 2) RθJA 62.5
°C/W
(Note 3) 32.2
Thermal Resistance, Junction to Lead (Note 5) RθJL 8.51
Operating and storage temperature range TJ, TSTG -55 to 150 °C
Notes: 2. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
3. Same as note (2), except the device is measured at t ≤ 10 sec.
4. Same as note (2), except the device is pulsed with D= 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature.
5. Thermal resistance from junction to solder-point (at the end of the drain lead).
ZXMP3A16G
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Thermal Characteristics
110
10m
100m
1
10
S ing le Pulse
Tamb=25°C
RDS(on)
Limited
100µs
1ms
10ms
100ms
1s
DC
Safe O perating A rea
-ID Drain Current (A)
-VDS Drain-Sou rce Voltage (V) 0 20 40 60 80 100 120 140 160
0.0
0.4
0.8
1.2
1.6
2.0
Derating Curve
Temperature (°C)
Max P ower Dissipat i on (W)
100µ 1m 10m 100m 1 10 100 1k
0
10
20
30
40
50
60
70 Tamb=25°C
Transient Therm al Imp ed ance
D=0.5
D=0.2
D=0.1
S ing le Pulse
D=0.05
Thermal Resistance (°C/W)
Pul s e Width (s) 100µ 1m 10m 100m 1 10 100 1k
1
10
100
Single Pulse
Tamb=25°C
Puls e P ower Dissip a t ion
Pu lse Wid th (s )
Maximum Power (W)
ZXMP3A16G
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Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BVDSS -30 ⎯ ⎯ V ID = -250μA, VGS = 0V
Zero Gate Voltage Drain Current IDSS ⎯ ⎯ -1 μA VDS = -30V, VGS = 0V
Gate-Source Leakage IGSS ⎯ ⎯ ±100 nA VGS = ±20V, VDS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage VGS
(
th
)
-1.0 ⎯ ⎯ V ID = -250μA, VDS = VGS
Static Drain-Source On-Resistance (Note 6) RDS (ON) ⎯ ⎯ 45 mΩ VGS = -10V, ID = -4.2A
70 VGS = -4.5V, ID = -3.4A
Forward Transconductance (Notes 6 & 7) gfs ⎯ 9.2 ⎯ S VDS = -15V, ID = -4.2A
Diode Forward Voltage (Note 6) VSD ⎯ -0.85 -0.95 V
IS = -3.6A, VGS = 0V, TJ = 25°C
Reverse recovery time (Note 7) tr
r
21.7 ⎯ ns IF = -2A, di/dt = 100A/μs,
TJ = 25°C
Reverse recovery charge (Note 7) Qr
r
⎯ 16.1 ⎯ nC
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance Ciss ⎯ 1022 ⎯ pF VDS = -15V, VGS = 0V
f = 1MHz
Output Capacitance Coss ⎯ 267 ⎯ pF
Reverse Transfer Capacitance Crss ⎯ 229 ⎯ pF
Total Gate Charge (Note 8) Q
g
⎯ 17.2 ⎯ nC VGS = -5V VDS = -15V
ID = -4.2A
Total Gate Charge (Note 8) Q
g
⎯ 29.6 ⎯ nC VGS = -10V
Gate-Source Charge (Note 8) Q
g
s ⎯ 2.8 ⎯ nC
Gate-Drain Charge (Note 8) Q
g
d ⎯ 8.6 ⎯ nC
Turn-On Delay Time (Note 8) tD
on
⎯ 3.8 ⎯ ns VDD = -15V, VGS = -10V
ID = -1A, RG ≅ 6.0Ω
Turn-On Rise Time (Note 8) t
r
⎯ 6.5 ⎯ ns
Turn-Off Delay Time (Note 8) tD
off
⎯ 37.1 ⎯ ns
Turn-Off Fall Time (Note 8) tf ⎯ 21.4 ⎯ ns
Notes: 6. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%
7. For design aid only, not subject to production testing.
8. Switching characteristics are independent of operating junction temperatures.
ZXMP3A16G
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Typical Characteristics
0.1 1 10
0.1
1
10
0.1 1 10
0.01
0.1
1
10
1.5 2.0 2.5 3.0 3.5
0.1
1
10
-50 0 50 100 150
0.6
0.8
1.0
1.2
1.4
1.6
0.1 1 10
0.1
1
0.4 0.6 0.8 1.0 1.2
0.01
0.1
1
10
5V10V 4V 3.5V
-VGS
2.5V
2V
3V
O u tput C h aracteristics
T = 25°C
-VGS
-ID Drai n Current (A )
-VDS Drain-Sou rce Voltage (V)
3.5V
3V
2V
1.5V
10V
2.5V
O u tpu t C haracteristics
T = 150°C
-ID Drai n Current (A )
-VDS Drain -Source Voltage (V)
Typical Transfer Ch aracteristics
-VDS = 10V
T = 25°C
T = 150°C
-ID Drain Current (A )
-VGS Gate-Source Voltage (V)
No rm alised Curves v Temp erature
RDS(on)
VGS = -10V
ID = -5.4A
VGS(th)
VGS = VDS
ID = -250uA
Normalised RDS(on) and VGS(th)
Tj Junction T e mperatu re (°C)
5V
10V
3V
2V
4V
3.5V
2.5V
O n-R esistan ce v D rain Cu rrent
T = 25°C
-VGS
RDS(on) Drain-Source On-Resistance (Ω)
-ID Drai n Current (A)
T = 150°C T = 25°C
Source-Drain Diod e F o rward Voltage
-VSD Source-D ra in Voltage ( V)
-ISD Reverse Drain Current (A)
ZXMP3A16G
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Typical Characteristics – continued
0.1 1 10
0
200
400
600
800
1000
1200
1400
1600
1800
CRSS
COSS
CISS
VGS = 0V
f = 1MHz
C Capacit ance (pF)
-VDS - Drain - Source Voltage (V) 0 5 10 15 20 25 30
0
2
4
6
8
10 ID = -4.2A
VDS = -15V
Gate-Source Voltage v G ate Charge
Capacitance v Drain-Source Voltage
Q - Ch a rge (nC)
-VGS Gate-Source Voltage (V)
Test Circuits
ZXMP3A16G
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Package Outline Dimensions
DIM Millimeters Inches DIM Millimeters Inches
Min Max Min Max Min Max Min Max
A - 1.80 - 0.071 D 6.30 6.70 0.248 0.264
A1 0.02 0.10 0.0008 0.004 e 2.30 BSC 0.0905 BSC
A2 1.55 1.65 0.0610 0.0649 e1 4.60 BSC 0.181 BSC
b 0.66 0.84 0.026 0.033 E 6.70 7.30 0.264 0.287
b2 2.90 3.10 0.114 0.122 E1 3.30 3.70 0.130 0.146
C 0.23 0.33 0.009 0.013 L 0.90 - 0.355 -
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches.
Suggested Pad Layout
1.5
0.059
mm
inches
3.8
0.15
2.0
0.079
6.3
0.248
2.3
0.091
2.0
0.079
ZXMP3A16G
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