PROFET(R) BTS 410 E2 Smart Highside Power Switch Features Product Summary Overvoltage protection Operating voltage On-state resistance Load current (ISO) Current limitation * Overload protection * Current limitation * Short circuit protection * Thermal shutdown * Overvoltage protection (including load dump) * Fast demagnetization of inductive loads * Reverse battery protection1) * Undervoltage and overvoltage shutdown with auto-restart and hysteresis * Open drain diagnostic output * Open load detection in ON-state * CMOS compatible input * Loss of ground and loss of Vbb protection * Electrostatic discharge (ESD) protection Vbb(AZ) Vbb(on) RON IL(ISO) IL(SCr) 65 V 4.7 ... 42 V 220 m 1.8 A 5 A TO-220AB/5 5 Standard 5 1 Straight leads 1 5 SMD Application * C compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads * All types of resistive, inductive and capacitve loads * Replaces electromechanical relays, fuses and discrete circuits General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions. + V bb Voltage Overvoltage Current Gate source protection limit protection 3 V Logic 2 Voltage Charge pump sensor Level shifter Rectifier IN OUT 5 Temperature sensor Open load ESD 4 Limit for unclamped ind. loads Logic Load detection ST Short circuit detection GND PROFET 1 Signal GND 1) Load GND With external current limit (e.g. resistor RGND=150 ) in GND connection, resistors in series with IN and ST connections, reverse load current limited by connected load. Semiconductor Group 1 of 16 2003-Oct-01 BTS 410 E2 Pin Symbol Function 1 GND - Logic ground 2 IN I Input, activates the power switch in case of logical high signal 3 Vbb + Positive power supply voltage, the tab is shorted to this pin 4 ST S Diagnostic feedback, low on failure 5 OUT (Load, L) O Output to the load Maximum Ratings at Tj = 25 C unless otherwise specified Parameter Supply voltage (overvoltage protection see page 3) Load dump protection2) VLoadDump = UA + Vs, UA = 13.5 V RI3)= 2 , RL= 6.6 , td= 400 ms, IN= low or high Load current (Short circuit current, see page 4) Operating temperature range Storage temperature range Power dissipation (DC), TC 25 C Inductive load switch-off energy dissipation, single pulse Vbb = 12V, Tj,start = 150C, TC = 150C const. IL = 1.8 A, ZL = 2.3 H, 0 : Electrostatic discharge capability (ESD) IN: (Human Body Model) all other pins: Symbol Vbb VLoad dump4) Values 65 100 Unit V V self-limited -40 ...+150 -55 ...+150 50 A C 4.5 1 2 J kV VIN IIN IST -0.5 ... +6 5.0 5.0 V mA Symbol Values typ max -2.5 -75 35 -- Unit IL Tj Tstg Ptot EAS VESD W acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993 Input voltage (DC) Current through input pin (DC) Current through status pin (DC) see internal circuit diagrams page 6 Thermal Characteristics Parameter and Conditions Thermal resistance 2) 3) 4) 5) chip - case: RthJC junction - ambient (free air): RthJA SMD version, device on PCB5): min ---- K/W Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins, e.g. with a 150 resistor in the GND connection and a 15 k resistor in series with the status pin. A resistor for the protection of the input is integrated. RI = internal resistance of the load dump test pulse generator VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for Vbb connection. PCB is vertical without blown air. Semiconductor Group 2 2003-Oct-01 BTS 410 E2 Electrical Characteristics Parameter and Conditions Symbol at Tj = 25 C, Vbb = 12 V unless otherwise specified Values min typ max Unit Load Switching Capabilities and Characteristics On-state resistance (pin 3 to 5) IL = 1.6 A Tj=25 C: RON Tj=150 C: Nominal load current, ISO Norm (pin 3 to 5) VON = 0.5 V, TC = 85 C Output current (pin 5) while GND disconnected or GND pulled up, Vbb=30 V, VIN= 0, see diagram page 7, Tj =-40...+150C Turn-on time IN to 90% VOUT: to 10% VOUT: Turn-off time IN RL = 12 , Tj =-40...+150C Slew rate on 10 to 30% VOUT, RL = 12 , Tj =-40...+150C Slew rate off 70 to 40% VOUT, RL = 12 , Tj =-40...+150C -- 190 220 390 440 m IL(ISO) IL(GNDhigh) 1.6 -- 1.8 -- -1 A mA ton toff 12 5 --- 125 85 s dV /dton -- -- 3 V/s -dV/dtoff -- -- 6 V/s Tj =-40...+150C: Tj =25C: Tj =-40...+150C: Undervoltage restart Tj =-40...+150C: Undervoltage restart of charge pump see diagram page 13 Undervoltage hysteresis Vbb(under) = Vbb(u rst) - Vbb(under) Overvoltage shutdown Tj =-40...+150C: Overvoltage restart Tj =-40...+150C: Overvoltage hysteresis Tj =-40...+150C: Overvoltage protection7) Tj =-40...+150C: Ibb=4 mA Standby current (pin 3) Tj=-40...+25C: Tj= 150C: VIN=0 Vbb(on) Vbb(under) 4.7 2.9 2.7 --- ----5.6 42 4.5 4.7 4.9 6.0 V V V V Vbb(under) -- 0.1 -- V Vbb(over) Vbb(o rst) Vbb(over) Vbb(AZ) 42 40 -65 --0.1 70 52 ---- V V V V IL(off) 10 18 -- 15 25 20 A Leakage output current (included in Ibb(off)) VIN=0 Operating current (Pin 1)8), VIN=5 V, Tj =-40...+150C ---- IGND -- 1 2.1 mA Operating Parameters Operating voltage 6) Undervoltage shutdown 6) 7) Vbb(u rst) Vbb(ucp) Ibb(off) A At supply voltage increase up to Vbb= 5.6 V typ without charge pump, VOUT Vbb - 2 V Meassured without load. See also VON(CL) in table of protection functions and circuit diagram page 7. Semiconductor Group 3 2003-Oct-01 BTS 410 E2 Parameter and Conditions Symbol at Tj = 25 C, Vbb = 12 V unless otherwise specified Protection Functions9) Initial peak short circuit current limit (pin 3 to 5)10), IL(SCp) ( max 450 s if VON > VON(SC) ) Tj =-40C: Tj =25C: Tj =+150C: Repetitive overload shutdown current limit IL(SCr) VON= 8 V, Tj = Tjt (see timing diagrams, page 11) Short circuit shutdown delay after input pos. slope VON > VON(SC), Tj =-40..+150C: td(SC) Values min typ max Unit 9 -4 -12 -- 23 -15 A -- 5 -- A -- -- 450 s min value valid only, if input "low" time exceeds 60 s Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL) IL= 40 mA, Tj =-40..+150C: IL= 1 A, Tj =-40..+150C: Short circuit shutdown detection voltage (pin 3 to 5) Thermal overload trip temperature Thermal hysteresis Reverse battery (pin 3 to 1) 11) VON(CL) 61 -- 68 -- 73 75 V VON(SC) Tjt Tjt -Vbb -150 --- 8.5 -10 -- ---32 V C K V Diagnostic Characteristics Open load detection current IL (OL) 2 -- 150 (on-condition) Tj=-40 ..150C: mA 8) Add IST, if IST > 0, add IIN, if VIN>5.5 V Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. 10) Short circuit current limit for max. duration of t d(SC) max=450 s, prior to shutdown 11) Requires 150 resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 2 and circuit page 7). 9) Semiconductor Group 4 2003-Oct-01 BTS 410 E2 Parameter and Conditions Symbol Values min typ max VIN(T+) VIN(T-) VIN(T) IIN(off) IIN(on) td(ST SC) 1.5 1.0 -1 10 -- --0.5 -25 -- 2.4 --30 70 450 V V V A A s td(ST) 300 -- 1400 s VST(high) VST(low) 5.0 -- 6 -- -0.4 V at Tj = 25 C, Vbb = 12 V unless otherwise specified Input and Status Feedback12) Input turn-on threshold voltage Tj =-40..+150C: Input turn-off threshold voltage Tj =-40..+150C: Input threshold hysteresis Off state input current (pin 2), VIN = 0.4 V On state input current (pin 2), VIN = 5 V Status invalid after positive input slope (short circuit) Tj=-40 ... +150C: Status invalid after positive input slope (open load) Tj=-40 ... +150C: Status output (open drain) Zener limit voltage Tj =-40...+150C, IST = +50 uA: ST low voltage Tj =-40...+150C, IST = +1.6 mA: 12) Unit If a ground resistor RGND is used, add the voltage drop across this resistor. Semiconductor Group 5 2003-Oct-01 BTS 410 E2 Truth Table Status Input- Output level level 412 B2 410 D2 410 E2/F2 410 G2 410 H2 L H L H L H L H L H L H L H L H H H L H H L L H L L L15) L15) L L H H H L H L H H (L14)) L L 15) L L15) L L H H H L H L H H (L14)) L L H H H H H H H L H H H H (L14)) L L H H H H H H L H H L L H L L H H H H Normal operation Open load Short circuit to GND Short circuit to Vbb Overtemperature Undervoltage Overvoltage L = "Low" Level H = "High" Level 13) H L L H H L L L L L L X = don't care Z = high impedance, potential depends on external circuit Status signal after the time delay shown in the diagrams (see fig 5. page 12...13) Terms Input circuit (ESD protection) Ibb I IN 2 V bb IN VST IN Vbb IN IL PROFET I ST V R 3 4 OUT I ESDZDI1 ZDI2 VON I 5 ST I GND GND 1 R IGND VOUT ZDI1 6 V typ., ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V). GND 13) Power Transistor off, high impedance, versions BTS 410H, BTS 412B: internal pull up current source for open load detection. 14) Low resistance short V to output may be detected in ON-state by the no-load-detection bb 15) No current sink capability during undervoltage shutdown Semiconductor Group 6 2003-Oct-01 BTS 410 E2 Overvolt. and reverse batt. protection Status output + V bb +5V V R IN R ST(ON) Logic ST R ST GND Z2 IN ST V ESDZD PROFET Z1 GND ESD-Zener diode: 6 V typ., max 5 mA; RST(ON) < 250 at 1.6 mA, ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V). R GND Signal GND VZ1 = 6.2 V typ., VZ2 = 70 V typ., RGND= 150 , RIN, RST= 15 k Open-load detection Short circuit detection ON-state diagnostic condition: VON < RON * IL(OL); IN high Fault Condition: VON > 8.5 V typ.; IN high + V bb + V bb V ON VON ON OUT Logic unit Short circuit detection OUT Open load detection Logic unit Inductive and overvoltage output clamp + V bb V GND disconnect Z VON 3 OUT GND 2 IN PROFET Vbb PROFET 4 VON clamped to 68 V typ. V bb V IN V ST OUT 5 ST GND 1 V GND Any kind of load. In case of Input=high is VOUT VIN - VIN(T+) . Due to VGND >0, no VST = low signal available. Semiconductor Group 7 2003-Oct-01 BTS 410 E2 Inductive Load switch-off energy dissipation GND disconnect with GND pull up E bb 3 2 E AS Vbb IN OUT PROFET 4 IN 5 ST PROFET GND = 1 ELoad Vbb OUT ST GND V V bb V IN ST V ZL GND { EL L RL ER Any kind of load. If VGND > VIN - VIN(T+) device stays off Due to VGND >0, no VST = low signal available. Energy stored in load inductance: Vbb disconnect with energized inductive load 2 EL = 1/2*L*I L While demagnetizing load inductance, the energy dissipated in PROFET is 3 high 2 Vbb IN EAS= Ebb + EL - ER= VON(CL)*iL(t) dt, OUT PROFET 4 with an approximate solution for RL > 0 : 5 ST EAS= GND 1 V IL* L IL*RL *(V + |VOUT(CL)|)* ln (1+ ) |VOUT(CL)| 2*RL bb Maximum allowable load inductance for a single switch off bb L = f (IL ); Tj,start = 150C,TC = 150C const., Vbb = 12 V, RL = 0 Normal load current can be handled by the PROFET itself. L [mH] 10000 Vbb disconnect with charged external inductive load high 2 S 3 IN Vbb PROFET 4 1000 OUT 5 D ST 100 GND 1 V bb 10 If other external inductive loads L are connected to the PROFET, additional elements like D are necessary. 1 1 Semiconductor Group 8 2 3 4 5 6 IL [A] 2003-Oct-01 BTS 410 E2 Typ. transient thermal impedance chip case ZthJC = f(tp, D), D=tp/T ZthJC [K/W] 10 1 D= 0.5 0.2 0.1 0.05 0.02 0.01 0 0.1 0.01 1E-5 1E-4 1E-3 1E-2 1E-1 1E0 1E1 tp [s] Semiconductor Group 9 2003-Oct-01 BTS 410 E2 Options Overview all versions: High-side switch, Input protection, ESD protection, load dump and reverse battery protection with 150 in GND connection, protection against loss of ground Type Logic version BTS 412 B2 410D2 410E2 410F2 410G2 410H2 Overtemperature protection with hysteresis Tj >150 C, latch function16)17) Tj >150 C, with auto-restart on cooling Short circuit to GND protection B D X X E F G X X X X X X X X X 308 H X switches off when VON>3.5 V typ. and Vbb> 7 V typ16) (when first turned on after approx. 150 s) switches off when VON>8.5 V typ.16) (when first turned on after approx. 150 s) 307 X X X Achieved through overtemperature protection X Open load detection in OFF-state with sensing current 30 A typ. in ON-state with sensing voltage drop across power transistor X Undervoltage shutdown with auto restart Overvoltage shutdown with auto restart18) X X X X X X X X X X - X X X X X X X X X X - X X X X -19) -19) -19) -19) X X X open load X X X X X X X X undervoltage X X - - - - X - overvoltage X X - - - - - - X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X overtemperature X X short circuit to GND X short to Vbb Status feedback for Status output type CMOS Open drain Output negative voltage transient limit (fast inductive load switch off) to Vbb - VON(CL) X X X X X X Load current limit high level (can handle loads with high inrush currents) low level (better protection of application) Protection against loss of GND X X X 16) Latch except when Vbb -VOUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (VOUT 0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 4). No latch between turn on and td(SC). 17) With latch function. Reseted by a) Input low, b) Undervoltage 18) No auto restart after overvoltage in case of short circuit 19) Low resistance short V to output may be detected in ON-state by the no-load-detection bb Semiconductor Group 10 2003-Oct-01 BTS 410 E2 Timing diagrams Figure 2b: Switching an inductive load Figure 1a: Vbb turn on: IN IN t V bb t d(bb IN) ST d(ST) *) V OUT V OUT A IL ST open drain I L(OL) t t A in case of too early VIN=high the device may not turn on (curve A) td(bb IN) approx. 150 s *) if the time constant of load is too large, open-load-status may occur Figure 3a: Turn on into short circuit, Figure 2a: Switching a lamp, IN IN ST ST VOUT V OUT td(SC) I I L L t t td(SC) approx. -- s if Vbb - VOUT > 8.5 V typ. Semiconductor Group 11 2003-Oct-01 BTS 410 E2 Figure 4a: Overtemperature: Reset if Tj <Tjt Figure 3b: Turn on into overload, IN IL IN ST I L(SCp) IL(SCr) V OUT T J ST t t Heating up may require several seconds, Vbb - VOUT < 8.5 V typ. Figure 5a: Open load: detection in ON-state, turn on/off to open load Figure 3c: Short circuit while on: IN IN ST t d(ST) ST V V OUT I IL OUT L open **) t t **) current peak approx. 20 s Semiconductor Group 12 2003-Oct-01 BTS 410 E2 Figure 6b: Undervoltage restart of charge pump Figure 5b: Open load: detection in ON-state, open load occurs in on-state VON(CL) V on IN d(ST OL2) on-state V bb(over) off-state t off-state ST t d(ST OL1) V OUT V V bb(u rst) V I normal open L normal V bb(o rst) bb(u cp) bb(under) V bb t charge pump starts at Vbb(ucp) =5.6 V typ. td(ST OL1) = tbd s typ., td(ST OL2) = tbd s typ Figure 7a: Overvoltage: Figure 6a: Undervoltage: IN IN V Vbb V ON(CL) Vbb(over) V bb(o rst) bb V bb(under) Vbb(u cp) V V bb(u rst) OUT V OUT ST t ST open drain t Semiconductor Group 13 2003-Oct-01 BTS 410 E2 Figure 9a: Overvoltage at short circuit shutdown: IN Vbb V bb(o rst) Output short to GND V OUT short circuit shutdown IL ST t Overvoltage due to power line inductance. No overvoltage autorestart of PROFET after short circuit shutdown. Semiconductor Group 14 2003-Oct-01 BTS 410 E2 Package and Ordering Code All dimensions in mm Standard TO-220AB/5 BTS 410 E2 SMD TO-220AB/5, Opt. E3062 Ordering code Ordering code BTS410E2 E3062A T&R: Q67060-S6102-A2 Changed since 04.96 Date Change Mar. EAS maximum rating and diagram 1997 and ZthJC diagram added ESD capability (except Input) specified to 2kV, RthJA SMD specified IL(GND high) max reduced from 10 to 1 mA Option Overview table columns for BTS307/308 added Fig. 1a: Vout-spike at Vbb-turn-on added TO-220AB/5, Option E3043 Ordering code BTS 410 E2 E3043 Semiconductor Group Q67060-S6102-A4 Q67060-S6102-A3 15 2003-Oct-01 BTS 410 E2 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81669 Munchen (c) Infineon Technologies AG 2001 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in lifesupport devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Semiconductor Group 16 2003-Oct-01