BTS410E2E3043 - Infineon Technologies

PROFET® BTS 410 E2

Semiconductor Group 1 of 16 2003-Oct-01

Smart Highside Power Switch

Features

• Overload protection

• Current limitation

• Short circuit protection

• Thermal shutdown

• Overvoltage protection (including load dump)

• Fast demagnetization of inductive loads

• Reverse battery protection1)

• Undervoltage and overvoltage shutdown with

auto-restart and hysteresis

• Open drain diagnostic output

• Open load detection in ON-state

• CMOS compatible input

• Loss of ground and loss of Vbb protection

• Electrostatic discharge (ESD) protection

Application

• µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads

• All types of resistive, inductive and capacitve loads

• Replaces electromechanical relays, fuses and discrete circuits

General Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic

feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions.

+ Vbb

IN

ST

Signal GND

ESD

PROFET

OUT

GND

Logic

Voltage

sensor

Voltage

source

Open load

detection

Short circuit

detection

Charge pump

Level shifter Temperature

sensor

Rectifier

Limit for

unclamped

ind. loads

Gate

protection

Current

limit

2

4

1

3

5

Load GND

Load

VLogic

Overvoltage

protection

1) With external current limit (e.g. resistor RGND=150 Ω) in GND connection, resistors in series with IN and ST

connections, reverse load current limited by connected load.

Product Summary

Overvoltage protection Vbb(AZ) 65 V

Operating voltage Vbb(on) 4.7 ... 42 V

On-state resistance RON 220 mΩ

Load current (ISO) IL(ISO) 1.8 A

Current limitation IL(SCr) 5A

TO-220AB/5

5

Standard

1

5

Straight leads

1

5

SMD

BTS 410 E2

Semiconductor Group 2 2003-Oct-01

Pin Symbol Function

1 GND - Logic ground

2 IN I Input, activates the power switch in case of logical high signal

3 Vbb + Positive power supply voltage,

the tab is shorted to this pin

4 ST S Diagnostic feedback, low on failure

5 OUT

(Load, L) O Output to the load

Maximum Ratings at Tj = 25 °C unless otherwise specified

Parameter Symbol Values Unit

Supply voltage (overvoltage protection see page 3) Vbb 65 V

Load dump protection2) VLoadDump = UA + Vs, UA = 13.5 V

RI3)= 2 Ω, RL= 6.6 Ω, td= 400 ms, IN= low or high VLoad dump4) 100 V

Load current (Short circuit current, see page 4) IL self-limited A

Operating temperature range

Storage temperature range Tj

Tstg -40 ...+150

-55 ...+150 °C

Power dissipation (DC), TC ≤ 25 °C Ptot 50 W

Inductive load switch-off energy dissipation, single pulse

Vbb = 12V, Tj,start = 150°C, TC = 150°C const.

IL = 1.8 A, ZL = 2.3 H, 0 Ω:

EAS 4.5 J

Electrostatic discharge capability (ESD) IN:

(Human Body Model) all other pins:

acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993

VESD 1

2kV

Input voltage (DC) VIN -0.5 ... +6 V

Current through input pin (DC)

Current through status pin (DC)

see internal circuit diagrams page 6

IIN

IST ±5.0

±5.0 mA

Thermal Characteristics

Parameter and Conditions Symbol Values Unit

min typ max

Thermal re sistance chip - case:

junction - ambient (free air): RthJC

RthJA --

-- --

-- 2.5

75 K/W

SMD version, device on PCB5): -- 35 --

2) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins, e.g. with a

150 Ω resistor in the GND connection and a 15 kΩ resistor in series with the status pin. A resistor for the

protection of the input is integrated.

3) RI = internal resistance of the load dump test pulse generator

4) VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839

5) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb

connection. PCB is vertical without blown air.

BTS 410 E2

Semiconductor Group 3 2003-Oct-01

Electrical Characteristics

Parameter and Conditions Symbol Values Unit

at Tj = 25 °C, Vbb = 12 V unless otherwise specified min typ max

Load Switching Capabilities and Characteristics

On-state resistance (pin 3 to 5)

IL = 1.6 A Tj=25 °C:

Tj=150 °C:

RON

--

190

390 220

440 mΩ

Nominal load current, ISO Norm (pin 3 to 5)

VON = 0.5 V, TC = 85 °C

IL(ISO)

1.6

1.8 -- A

Output current (pin 5) while GND disconnected or

GND pulled up, Vbb=30 V, VIN= 0, see diagram

page 7, Tj =-40...+150°C

IL(GNDhigh) -- -- 1 mA

Turn-on time IN to 90% VOUT:

Turn-off time IN to 10% VOUT:

RL = 12 Ω, Tj =-40...+150°C

ton

toff 12

5 --

-- 125

85 µs

Slew rate on

10 to 30% VOUT, RL = 12 Ω, Tj =-40...+150°C dV /dton -- -- 3 V/µs

Slew rate off

70 to 40% VOUT, RL = 12 Ω, Tj =-40...+150°C -dV/dtoff -- -- 6 V/µs

Operating Parameters

Operating voltage 6) Tj =-40...+150°C: Vbb(on) 4.7 -- 42 V

Undervoltage shutdown Tj =25°C:

Tj =-40...+150°C: Vbb(under) 2.9

2.7 --

-- 4.5

4.7 V

Undervoltage restart Tj =-40...+150°C: Vbb(u rst) -- -- 4.9 V

Undervoltage restart of charge pump

see diagram page 13 Vbb(ucp) -- 5.6 6.0 V

Undervoltage hysteresis

∆Vbb(under) = Vbb(u rst) - Vbb(under) ∆Vbb(under) -- 0.1 -- V

Overvoltage shutdown Tj =-40...+150°C: Vbb(over) 42 -- 52 V

Overvoltage restart Tj =-40...+150°C: Vbb(o rst) 40 -- -- V

Overvoltage hysteresis Tj =-40...+150°C: ∆Vbb(over) -- 0.1 -- V

Overvoltage protection7) Tj =-40...+150°C:

Ibb=4 mA Vbb(AZ) 65 70 -- V

Standby current (pin 3) T

j=-40...+25°C:

VIN=0 T

j= 150°C: Ibb(off) --

-- 10

18 15

25 µA

Leakage output current (included in Ibb(off))

VIN=0

IL(off) -- -- 20 µA

Operating current (Pin 1)8), VIN=5 V,

Tj =-40...+150°C IGND -- 1 2.1 mA

6) At supply voltage increase up to Vbb= 5.6 V typ without charge pump, VOUT ≈Vbb - 2 V

7) Meassured without load. See also VON(CL) in table of protection functions and circuit diagram page 7.

BTS 410 E2

Parameter and Conditions Symbol Values Unit

at Tj = 25 °C, Vbb = 12 V unless otherwise specified min typ max

Semiconductor Group 4 2003-Oct-01

Protection Functions9)

Initial peak short circuit current limit (pin 3 to 5)10),

( max 450 µs if VON > VON(SC) ) IL(SCp)

Tj =-40°C:

Tj =25°C:

Tj =+150°C:

9

--

4

--

12

--

23

--

15

A

Repetitive overload shutdown current limit IL(SCr)

VON= 8 V, Tj = Tjt (see timing diagrams, page 11) -- 5 -- A

Short circuit shutdown delay after input pos. slope

VON > VON(SC), Tj =-40..+150°C:

min value valid only, if input "low" time exceeds 60 µs

td(SC)

--

-- 450 µs

Output clamp (inductive load switch off)

at VOUT = Vbb - VON(CL) IL= 40 mA, Tj =-40..+150°C:

VON(CL)

61

68 73 V

IL= 1 A, Tj =-40..+150°C: -- -- 75

Short circuit shutdown detection voltage

(pin 3 to 5)

VON(SC)

--

8.5 -- V

Thermal overload trip temperature Tjt 150 -- -- °C

Thermal hysteresis

∆

Tjt -- 10 -- K

Reverse battery (pin 3 to 1) 11) -Vbb -- -- 32 V

Diagnostic Characteristics

Open load detection current

(on-condition) Tj=-40 ..150°C: IL (OL)

2

-- 150 mA

8) Add IST, if IST > 0, add IIN, if VIN>5.5 V

9) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the

data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not

designed for continuous repetitive operation.

10) Short circuit current limit for max. duration of td(SC) max=450 µs, prior to shutdown

11) Requires 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source

diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal

operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature

protection is not active during reverse current operation! Input and Status currents have to be limited (see

max. ratings page 2 and circuit page 7).

BTS 410 E2

Parameter and Conditions Symbol Values Unit

at Tj = 25 °C, Vbb = 12 V unless otherwise specified min typ max

Semiconductor Group 5 2003-Oct-01

Input and Status Feedback12)

Input turn-on threshold voltage Tj =-40..+150°C: VIN(T+) 1.5 -- 2.4 V

Input turn-off threshold voltage Tj =-40..+150°C: VIN(T-) 1.0 -- -- V

Input threshold hysteresis ∆ VIN(T) -- 0.5 -- V

Off state input current (pin 2), VIN = 0.4 V IIN(off) 1 -- 30 µA

On state input current (pin 2), VIN = 5 V IIN(on) 10 25 70 µA

Status invalid after positive input slope

(short circuit) Tj=-40 ... +150°C: td(ST SC)

-- -- 450 µs

Status invalid after positive input slope

(open load) Tj=-40 ... +150°C: td(ST)

300 -- 1400 µs

Status output (open drain)

Zener lim it voltage T

j =-40...+150°C, IST = +50 uA:

ST low voltage Tj =-40...+150°C, IST = +1.6 mA: VST(high)

VST(low) 5.0

-- 6

-- --

0.4 V

12) If a ground resistor RGND is used, add the voltage drop across this resistor.

BTS 410 E2

Semiconductor Group 6 2003-Oct-01

Truth Table

Input- Output

Status

level level 412

B2 410

D2 410

E2/F2 410

G2 410

H2

Normal

operation L

H L

H H

H

Open load L

H 13)

H L

H H

L H

L L

H

Short circuit

to GND L

H L

L H

H H

L

Short circuit

to Vbb L

H H

H L

H H

H (L14)) H

H (L14)) L

H

Overtem-

perature L

H L

L L

L

Under-

voltage L

H L

L L15)

L15) L15)

L15) H

H H

H

Overvoltage L

H L

L L

L H

H H

H

L = "Low" Level X = don't care Z = high impedance, potential depends on external circuit

H = "High" Level Status signal after the time delay shown in the diagrams (see fig 5. page 12...13)

13) Power Transistor off, high impedance, versions BTS 410H, BTS 412B: internal pull up current source for

open load detection.

14) Low resistance short Vbb to output may be detected in ON-state by the no-load-detection

15) No current sink capability during undervoltage shutdown

Terms

PROFET

V

IN

ST

OUT

GND

bb

VST

VIN

IST

IIN

Vbb

Ibb

IL

VOUT

IGND

VON

1

2

4

3

5

RGND

Input circuit (ESD protection)

IN

GND

I

R

ZD ZD

I

I1 I2

ESD-

ZDI1 6 V typ., ESD zener diodes are not to be used as

voltage clamp at DC conditions. Operation in this mode

may result in a drift of the zener voltage (increase of up

to 1 V).

BTS 410 E2

Semiconductor Group 7 2003-Oct-01

Status output

ST

GND

ESD-

ZD

+5V

RST(ON)

ESD-Zener diode: 6 V typ., max 5 mA;

RST(ON) < 250 Ω at 1.6 mA, ESD zener diodes are not

to be used as voltage clamp at DC conditions.

Operation in this mode may result in a drift of the zener

voltage (increase of up to 1 V).

Short circuit detection

Fault Condition: VON > 8.5 V typ.; IN high

Short circuit

detection

Logic

unit

+ Vbb

OUT

VON

Inductive and overvoltage output clamp

+ Vbb

OUT

GND PROFET

VZ

VON

VON clamped to 68 V typ.

Overvolt. and reverse batt. protection

+ Vbb

IN

ST

R

IN

R

GND

R

Signal GND

Logic

PROFET

VZ2

VZ1

VZ1 = 6.2 V typ., VZ2 = 70 V typ., RGND= 150 Ω, RIN,

RST= 15 kΩ

Open-load detection

ON-state diagnostic condition: VON < RON * IL(OL); IN

high

Open load

detection

Logic

unit

+ Vbb

OUT

ON

VON

GND disconnect

PROFET

V

IN

ST

OUT

GND

bb

Vbb 1

2

4

3

5

VIN VST V

GND

Any ki nd of load. In c ase of Input=hi gh i s VOUT ≈ VIN - VIN(T+) .

Due to VGND >0, no VST = low signal av ai l abl e.

BTS 410 E2

Semiconductor Group 8 2003-Oct-01

GND disconnect with GND pull up

PROFET

V

IN

ST

OUT

GND

bb

Vbb

1

2

4

3

5

VGND

VIN VST

Any kind of load. If VGND > VIN - VIN(T+) device s tays of f

Due to VGND >0, no VST = low signal av ai l abl e.

Vbb disconnect with energized inductive

load

PROFET

V

IN

ST

OUT

GND

bb

Vbb

1

2

4

3

5

high

Normal load current can be handled by the PROFET

itself.

Vbb disconnect with charged external

inductive load

PROFET

V

IN

ST

OUT

GND

bb

1

2

4

3

5

Vbb

high

S

D

If other external inductive loads L are connected to t he PROFET,

additional el em ents lik e D are necessary .

Inductive Load switch-off energy

dissipation

PROFET

V

IN

ST

OUT

GND

bb

=

E

EAS

bb

L

R

ELoad

L

R

L

{Z

L

Energy stored in load inductance:

EL = 1/2·L·I2

L

While demagnetizing load inductance, the energy

dissipated in PROFET is

EAS= Ebb + EL - ER= VON(CL)·iL(t) dt,

with an approximate solution for RL > 0 Ω:

EAS= IL· L

2·RL·(Vbb + |VOUT(CL)|)· ln (1+ IL·RL

|VOUT(CL)| )

Maximum allowable load inductance for

a single switch off

L = f (IL ); Tj,start = 150°C,TC = 150°C const.,

Vbb = 12 V, RL = 0 Ω

L [mH]

1

10

100

1000

10000

123456

IL [A]

BTS 410 E2

Semiconductor Group 9 2003-Oct-01

Typ. transient thermal impedance chip case

ZthJC = f(tp, D), D=tp/T

ZthJC [K/W]

0.01

0.1

1

10

1E-5 1E-4 1E-3 1E-2 1E-1 1E0 1E1

0

0.01

0.02

0.05

0.1

0.2

0.5

D=

tp [s]

BTS 410 E2

Semiconductor Group 10 2003-Oct-01

Options Overview

all versions: High-side switch, Input protection, ESD protection, load dump and

reverse battery protection with 150 Ω in GND connection, protection against loss of

ground

Type BTS 412 B2 410D2 410E2 410F2 410G2 410H2 307 308

Logic version B D E F G H

Overtemperatur e protection w ith hysteresi s

Tj >150 °C, latch function16)17)

Tj >150 °C, with auto-restart on cooling X X

X X

Short circuit to GND protection

switches off when VON>3.5 V typ. and Vbb> 7 V

typ16) (when first turned on after approx. 150 µs) X X

switches off when VON>8.5 V typ.16)

(when first turned on after approx. 150 µs)

Achieved through overtemperature protection

X X X X

X

Open load detection

in OFF-state with sensing current 30 µA typ.

in ON-state with sensing voltage drop across

power transistor

X

X X X X

Undervoltage shutdown with auto restart X X X X X X X X

Overvoltage shutdown with auto restart18)X X X X X X - X

Status feedback for

overtemperature

short circuit to GND

short to Vbb

open load

undervoltage

overvoltage

X

-19)

X

-19)

X

-

X

-19)

X

-

X

-

-19)

X

-

X

-

X

-

X

-

Status output type

CMOS

Open drain X X

X

Output negative voltage transient limit

(fast inductive load switch off)

to Vbb - VON(CL) X X X X X X X X

Load current limit

high level (can handl e l oads with high inrush currents)

low level (bet ter protecti on of applicati on) X X X

X

Protection against loss of GND X X X X X X X X

16) Latch except when Vbb -VOUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (VOUT ≠

0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 4). No latch

between turn on and td(SC).

17) With latch function. Reseted by a) Input low, b) Undervoltage

18) No auto restart after overvoltage in case of short circuit

19) Low resistance short Vbb to output may be detected in ON-state by the no-load-detection

BTS 410 E2

Semiconductor Group 11 2003-Oct-01

Timing diagrams

Figure 1a: Vbb turn on:

IN

V

OUT

t

V

bb

ST open drain

A

td(bb IN)

in case of too early VIN=high the device may not turn on (curve A)

td(bb IN) approx. 150 µs

Figure 2a: Switching a lamp,

IN

ST

OUT

L

t

V

I

Figure 2b: Switching an inductive load

IN

ST

L

t

V

I

*)

OUT

td(ST)

IL(OL)

*) if the t i m e constant of load is too large, open-load-st at us may

occur

Figure 3a: Turn on into short circuit,

IN

ST

OUT

L

t

V

I

td(SC)

t

d(SC) approx. -- µs if Vbb - VOUT > 8.5 V typ.

BTS 410 E2

Semiconductor Group 12 2003-Oct-01

Figure 3b: Turn on into overload,

IN

ST

L

t

I

L(SCr)

I

IL(SCp)

Heating up may requi re several seconds,

Vbb - VOUT < 8.5 V t yp.

Figure 3c: Short circuit while on:

IN

ST

OUT

L

t

V

I**)

**) current peak approx. 20 µs

Figure 4a: Overtemperature:

Reset if Tj <Tjt

IN

ST

OUT

J

t

V

T

Figure 5a: Open load: detection in ON-state, turn

on/off to open load

IN

ST

OUT

L

t

V

I

open

td(ST)

BTS 410 E2

Semiconductor Group 13 2003-Oct-01

Figure 5b: Open load: detection in ON-state, open

load occurs in on-state

IN

ST

OUT

L

t

V

Iopen

normal normal

td(ST OL1) td(ST OL2)

td(ST OL1) = tbd µs typ., td(ST OL2) = tbd µs typ

Figure 6a: Undervoltage:

IN

V

OUT

t

V

bb

ST open drain

VV

bb(under) bb(u rst)

bb(u cp)

V

Figure 6b: Undervoltage restart of charge pump

bb(under)

V

Vbb(u rst)

Vbb(over)

Vbb(o rst)

Vbb(u cp)

off-state

on-state

V

ON(CL)

Vbb

Von

off-state

charge pump starts at Vbb(ucp) =5.6 V typ.

Figure 7a: Overvoltage:

IN

V

OUT

t

V

bb

ST

ON(CL)

VVbb(over) Vbb(o rst)

BTS 410 E2

Semiconductor Group 14 2003-Oct-01

Figure 9a: Overvoltage at short circuit shutdown:

IN

V

OUT

t

V

bb

ST

IL

Vbb(o rst)

Output short to GND

short circuit shutdown

Overvoltage due to power line induc tance. No ov ervoltage auto-

restart of PROFET after short ci rcuit shut down.

BTS 410 E2

Semiconductor Group 15 2003-Oct-01

Package and Ordering Code

All dimensions in mm

Standard TO-220AB/5 Ordering code

BTS 410 E2 Q67060-S6102-A2

TO-220AB/5, Option E3043 Ordering code

BTS 410 E2 E3043 Q67060-S6102-A3

SMD TO-220AB/5, Opt. E3062 Ordering code

BTS410E2 E3062A T&R: Q67060-S6102-A4

Changed since 04.96

Date Change

Mar.

1997 EAS maximum rating and diagram

and ZthJC diagram added

ESD capability (except Input)

specified to 2kV, RthJA SMD

specified

I

L(GND high) max reduced from 10 to

1 mA

Option Overview table columns for

BTS307/308 added

Fig. 1a: Vout-spike at Vbb-turn-on

added

BTS 410 E2

Semiconductor Group 16 2003-Oct-01

Published by

Infineon Technologies AG,

St.-Martin-Strasse 53,

D-81669 München

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characteristics.

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descriptions and charts stated herein.

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