J - PNP ~_ SILICON TRANSISTOR DESCRIPTION TO-92B 2IN5367(K) is PNP silicon planar transistor use in general purpose e consumer and industrial amplifier and i ching applications. foto} bes switching af race Ps CO) BOTTOM lew wette FASCOOTE? TOLe am aHMCD.OLe" ABSOLUTE. RAXIMUM RATINGS Collector-Eimntcr Voltage Vcro 32V Collector-Base Votage Vczo 40V Emitter-Base \ oltige Vero 4V Collector Cures Io 300mA Continuous Peover Dissipation Py 360mW ~ Operating & Si ave Junction Temperature T) Pate -55 to + 150C ELECTRO-OPTICAL CHARACTERISTICS (Ta=25C) AR AMETER SYMBOL | MIN MAX | UNIT CONDITIONS Collector-Emiter hreakdown Voltage LV cro* 32 Vo Io=il0mA I,;=0 Collector Cater? Current Icpo 100 nA | Vcp=40V 1,=0 Collector (ue irrent legs 100 nA | Veg=40V Veg =O Emitter Cunefi Carrent leno 10 pA (Vep=4V 1.=0 D.C. Current (cath Hep 170 Io=2mA Vep=idV 170-500 1e=50MA Veg =1 50 1-=300MA Ven =5V Base-Emitier dprte Var 0.8 VY Ip=2mA Vep=l0Vv Collector-Enuder aturation Voltage V ce rsaty* 0.25 v 1.=50mA 1,=2.5mA 1 VV ie=300mA Ty =30mA Base-Emitter Sotaricion Voltage V ppsaty* 11 Vv i.=50mA 1,=2.5mA 2 V c=300mA Ty =30mA Small Signal erent Gain he 200 I.=2mA Vep=lOV f=1kHz Output Capacnanc. Cop 8 pF Vep=i0V f=iMHz Input Capagtines Crp 35 pF Vpp=0.5V f=1MHz Current Gain-sancwidth Product ff, 200 TYP pF ip=2mA Vega lov Pulse test -o to width <300pS, duty cycle < 2%. MICRO ELECTRONICS LID. 2H ABA a) 38, Hung To Read, Microtron Building, Kwun Tong, Kowloon, Hong Kong. Kwun Tong P.O. Box 69477 Hong Kong. Fax No. 23410321 Telex: 43510 Micro Hx. Yel: 2343 6181-5