VBO 30 IdAVM = 35 A VRRM = 800-1800 V Single Phase Rectifier Bridge VRSM VRRM V V 900 1300 1700 1900 800 1200 1600 1800 VBO VBO VBO VBO + + Type ~ ~ ~ 30-08NO7 30-12NO7 30-16NO7 30-18NO7* - - ~ * delivery time on request 400 440 A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 360 400 A A TVJ = 45C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 800 810 A2 s A2 s 650 670 2 As A2 s -40...+150 150 -40...+150 C C C 2500 3000 V~ V~ 15% 15% 15% 15% Nm lb.in. Nm lb.in. 135 g TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ TVJM Tstg VISOL 50/60 Hz, RMS IISOL < 1 mA Md Mounting torque (M4) t = 1 min t=1s 1.5 13 1.5 13 Terminal connection torque (M4) Weight typ. Symbol Conditions IR VR = VRRM VR = VRRM TVJ = 25C TVJ = TVJM < < 0.3 5.0 mA mA VF IF TVJ = 25C < 2.2 V VT0 rT For power-loss calculations only TVJ = TVJM 0.85 12 V m RthJC per per per per 2.8 0.7 3.4 0.85 K/W K/W K/W K/W * Supplies for DC power equipment * Input rectifiers for PWM inverter * Battery DC power supplies * Field supply for DC motors Advantages * Easy to mount with two screws * Space and weight savings * Improved temperature and power cycling Dimensions in mm (1 mm = 0.0394") 7 M4 8 9 Characteristic Values Applications 10 I2t t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine * Package with screw terminals * Isolation voltage 3000 V~ * Planar passivated chips * Blocking voltage up to 1800 V * Low forward voltage drop * UL registered E 72873 ~ TVJ = 45C VR = 0 A ~ IFSM 35 9 TC = 85C, module Features 4.3 IdAVM Maximum Ratings 27 Conditions 45 Symbol 27 45 4.8 1.1 55 22 diode; DC current module diode; DC current module 9 24 RthJK = 150 A 5 Data according to IEC 60747 refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. (c) 2010 IXYS All rights reserved 20100706a 1-2 http://store.iiic.cc/ VBO 30 1:TVJ= 150C [A] 10 I F(OV) -----I FSM 200 IFSM (A) TVJ=45C 2:TVJ= 25C 1.6 2 As TVJ=150C 400 3 360 150 T VJ=45C 1.4 TVJ=1 50C 1.2 100 1 0 VRRM 0.8 50 1/2 V RRM 1 VRRM 0.6 IF 1 2 0 10 0.4 1.0 1.5 2.0 VF[V] 2.5 100 3.0 101 t[ms] 102 103 Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration Fig. 1 Forward current versus voltage drop per diode 50 TC [W ] 80 PSB 35 0.29 0.01 55 60 = RTHCA [K/W] 65 70 75 0.57 2 1 2 4 t [ms ] 40 DC sin.180 [A] rec.120 rec.60 30 95 100 105 2.23 DC si n .1 8 0 re c .1 2 0 r e c. 60 r e c. 30 20 P V TO T 0 10 IF AV M 30 0 [A ] rec.30 85 90 1.12 40 10 Fig. 3 I2dt versus time (1-10ms) per diode or thyristor 80 60 6 20 110 115 120 5.57 125 130 135 10 140 I dAV 145 C 150 50 100 Tamb 15 0 [K ] 0 50 100 150 200 T (C) C Fig. 4 Power dissipation versus direct output current and ambient temperature Fig.5 Maximum forward current at case temperature 5 K/W 4 Z thJC 3 Z thJK 2 1 Z th 0.01 0.1 1 10 t[s] Fig. 6 Transient thermal impedance per diode or thyristor, calculated IXYS reserves the right to change limits, test conditions and dimensions. (c) 2010 IXYS All rights reserved 20100706a 2-2 http://store.iiic.cc/