© 2010 IXYS All rights reserved 1 - 2
IXYS reserves the right to change limits, test conditions and dimensions.
VBO 30
20100706a
IdAVM =35A
VRRM = 800-1800 V
VRSM VRRM Type
VV
900 800 VBO 30-08NO7
1300 1200 VBO 30-12NO7
1700 1600 VBO 30-16NO7
1900 1800 VBO 30-18NO7*
* delivery time on request
Symbol Conditions Maximum Ratings
IdAVM TC = 85°C, module 35 A
IFSM TVJ = 45°C t = 10 ms (50 Hz), sine 400 A
VR = 0 t = 8.3 ms (60 Hz), sine 440 A
TVJ = TVJM t = 10 ms (50 Hz), sine 360 A
VR = 0 t = 8.3 ms (60 Hz), sine 400 A
I2tTVJ = 45°C t = 10 ms (50 Hz), sine 800 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 810 A2s
TVJ = TVJM t = 10 ms (50 Hz), sine 650 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 670 A2s
TVJ -40...+150 °C
TVJM 150 °C
Tstg -40...+150 °C
VISOL 50/60 Hz, RMS t = 1 min 2500 V~
IISOL < 1 mA t = 1 s 3000 V~
MdMounting torque (M4) 1.5 ±15% Nm
13 ±15% lb.in.
Terminal connection torque (M4) 1.5 ±15% Nm
13 ±15% lb.in.
Weight typ. 135 g
Features
• Package with screw terminals
• Isolation voltage 3000 V~
• Planar passivated chips
• Blocking voltage up to 1800 V
• Low forward voltage drop
• UL registered E 72873
Applications
• Supplies for DC power equipment
• Input rectifiers for PWM inverter
• Battery DC power supplies
• Field supply for DC motors
Advantages
• Easy to mount with two screws
• Space and weight savings
• Improved temperature and power cycling
Data according to IEC 60747 refer to a single diode unless otherwise stated.
Symbol Conditions Characteristic Values
IRVR= VRRM TVJ = 25°C < 0.3 mA
VR= VRRM TVJ = TVJM < 5.0 mA
VFIF= 150 A TVJ = 25°C< 2.2 V
VT0 For power-loss calculations only 0.85 V
rTTVJ = TVJM 12 mΩ
RthJC per diode; DC current 2.8 K/W
per module 0.7 K/W
RthJK per diode; DC current 3.4 K/W
per module 0.85 K/W
Dimensions in mm (1 mm = 0.0394")
Single Phase
Rectifier Bridge
+
–
~
~
~
~
+
-
99
45
27
4.3
~~
7
8
927
45
55
4.8
10
24
22
51.1
M4
http://store.iiic.cc/
© 2010 IXYS All rights reserved 2 - 2
IXYS reserves the right to change limits, test conditions and dimensions.
VBO 30
20100706a
Fig. 1 Forward current versus
voltage drop per diode
Fig. 2 Surge overload current per diode
IFSM: Crest value. t: duration
Fig. 3 I2dt versus time (1-10ms)
per diode or thyristor
Fig. 4 Power dissipation versus direct output current and ambient temperature Fig.5 Maximum forward current
at case temperature
Fig. 6 Transient thermal impedance per diode or thyristor, calculated
1.0 1.5 2.0 2.5 3.0
0
50
100
150
200
V [V]
F
IF
[A] 1:T = 150°C
VJ
2:T = 25°C
VJ
12
0.4
0.6
0.8
1
1.2
1.4
1.6
10
0 10
1 10
2 10
3
t[ms]
I (A)
FSM
TVJ=45°C TVJ=150°C
400 360
I
------
I
FSM
F(OV)
0 V
RRM
1/2 V
RRM
1 V
RRM
2 4 6 10
TVJ=45°C
TVJ=1 50°C
t [ms ]
1
10
10
2
3
As
2
3010
0
20
40
60
80
50
55
60
65
70
75
80
85
90
95
100
105
110
115
120
125
130
135
140
145
150
T
C
°
C
DC
sin.180°
rec.120°
rec.60°
rec.30°
5.57
2.23
1.12
0.57
0.29 0.01 = R THCA [K/W]
IFAVM [A] Tamb [K]
0 50 100 150
[W]
P
VTOT
PSB 35
50 100 150 200
0
10
20
30
40 DC
.180°
.120°
.60°
sin
rec
rec
rec.30°
T (°C)
C
I
dAV
[A]
0.01 0.1 1 10
1
2
3
4
5
K/W
Zth
t
[
s
]
ZthJK
ZthJC
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