DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES * Low noise figure: NF = 0.6 dB TYP. @ f = 2 GHz * High associated gain: Ga = 16 dB TYP. @ f = 2 GHz * Gate width: Wg = 400 m * 4-pin super minimold package * Tape & reel packaging only available ORDERING INFORMATION Part Number NE34018-T1 Package 4-pin super minimold Supplying Form * 8 mm wide embossed taping * Pin 3 (Source), Pin 4 (Drain) face the perforation side of the tape * Qty 3 kpcs/reel * 8 mm wide embossed taping * Pin 1 (Source), Pin 2 (Gate) face the perforation side of the tape * Qty 3 kpcs/reel NE34018-T2 Remark To order evaluation samples, consult your NEC sales representative (Part number for sample order: NE34018). ABSOLUTE MAXIMUM RATINGS (TA = +25 C) Parameter Symbol Ratings Unit Drain to Source Voltage VDS 4.0 V Gate to Source Voltage VGSO -3.0 V Gate to Drain Voltage VGDO -3.0 V ID IDSS mA Total Power Dissipation Ptot 150 mW Channel Temperature Tch 125 C Storage Temperature Tstg -65 to +125 C Drain Current Because this product uses high-frequency technology, avoid excessive static electricity, etc. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. P11618EJ4V0DS00 (4th edition) Date Published September 2000 NS CP(K) Printed in Japan The mark * shows major revised points. (c) 1996, 2000 NE34018 RECOMMENDED OPERATING CONDITIONS (TA = +25 C) Parameter Symbol MIN. TYP. MAX. Unit VDS - 2.0 3.0 V Drain Current ID - 5 30 mA Input Power Pin - - 0 dBm Drain to Source Voltage ELECTRICAL CHARACTERISTICS (TA = +25 C) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Gate to Source Leak Current IGSO VGS = -3.0 V - 0.5 10 A Saturated Drain Current IDSS VDS = 2.0 V, VGS = 0 V 30 - 120 mA -0.2 -0.8 -2.0 V Gate to Source Cutoff Voltage VGS (off) VDS = 2.0 V, ID = 100 A Transconductance gm VDS = 2.0 V, ID = 5 mA 30 - - mS Noise Figure NF VDS = 2.0 V, ID = 5 mA, f = 2 GHz - 0.6 1.0 dB Associated Gain Ga 14 16 - dB Power Gain GS - 18 - dB - 15 - dBm Gain 1 dB Compression Output Power PO (1 dB) VDS = 3.0 V, ID = 30 mA (RF off), f = 2 GHz IDSS CLASSIFICATION 2 Rank IDSS (mA) Marking 63 30 to 65 V63 64 60 to 120 V64 Data Sheet P11618EJ4V0DS00 NE34018 TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25 C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 120 VGS = 0 V 100 150 100 50 -0.2 V 60 -0.4 V 40 -0.6 V 20 50 0 100 150 1 0 200 2 3 4 5 Ambient Temperature TA (C) Drain to Source Voltage VDS (V) DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE NOISE FIGURE, ASSOCIATED GAIN vs. DRAIN CURRENT 100 1.0 VDS = 2.0 V 60 40 18 VDS = 2.0 V f = 2 GHz 0.9 80 Noise Figure NF (dB) Drain Current ID (mA) 80 17 Ga 0.8 16 0.7 15 0.6 14 NF 0.5 13 20 12 0.4 0 -2.0 -1.0 0 0.3 Associated Gain Ga (dB) 200 Drain Current ID (mA) Total Power Dissipation Ptot (mW) 250 0 Gate to Source Voltage VGS (V) 10 20 11 30 Drain Current ID (mA) Remark The graphs indicate nominal characteristics. Data Sheet P11618EJ4V0DS00 3 NE34018 S-PARAMETERS MAG. AND ANG. VDS = 2.0 V, ID = 5 mA Frequency MHz S11 MAG. S21 ANG. MAG. (deg.) 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2700 2800 2900 3000 4 0.997 0.994 0.989 0.983 0.978 0.972 0.954 0.960 0.951 0.945 0.934 0.926 0.914 0.901 0.887 0.807 0.787 0.775 0.755 0.745 0.732 0.720 0.706 0.691 0.677 0.657 -15.9 -19.1 -22.0 -25.1 -27.9 -31.0 -33.8 -36.1 -38.8 -41.2 -43.7 -46.3 -48.4 -50.7 -52.9 -58.3 -60.6 -62.9 -64.7 -66.8 -68.5 -70.8 -72.8 -75.3 -77.2 -79.5 S12 ANG. MAG. (deg.) 5.053 5.070 4.994 4.992 4.975 4.893 4.879 4.824 4.790 4.746 4.696 4.655 4.588 4.526 4.463 4.308 4.241 4.193 4.122 4.069 4.017 3.977 3.913 3.892 3.833 3.783 165.6 162.8 160.1 157.4 154.9 152.0 149.4 147.1 144.6 142.2 139.8 137.4 135.1 132.8 130.7 124.8 122.6 120.4 118.4 116.5 114.7 112.7 110.7 108.9 106.9 105.0 S22 ANG. MAG. (deg.) 0.020 0.024 0.027 0.031 0.035 0.039 0.042 0.045 0.048 0.050 0.054 0.056 0.058 0.061 0.063 0.064 0.066 0.067 0.070 0.070 0.072 0.074 0.075 0.077 0.078 0.080 Data Sheet P11618EJ4V0DS00 82.6 80.1 79.0 77.0 75.1 73.7 71.8 71.0 69.9 68.9 68.2 65.4 65.7 63.9 62.7 58.5 57.1 56.1 55.8 54.8 55.0 54.5 53.1 53.1 51.7 51.5 ANG. (deg.) 0.805 0.801 0.800 0.798 0.797 0.793 0.791 0.792 0.785 0.782 0.780 0.777 0.775 0.769 0.766 0.699 0.697 0.685 0.680 0.675 0.671 0.666 0.657 0.656 0.650 0.642 -9.0 -10.7 -12.3 -13.9 -15.4 -17.0 -18.4 -19.6 -20.9 -22.2 -23.4 -24.4 -25.5 -26.3 -27.3 -27.7 -28.6 -29.8 -30.2 -31.1 -31.9 -32.5 -33.6 -34.1 -34.8 -35.6 NE34018 AMPLIFIER PARAMETERS VDS = 2.0 V, ID = 5 mA Frequency GUmax GAmax S212 S122 MHz dB dB dB dB 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2700 2800 2900 3000 40.42 37.65 35.02 33.18 31.99 30.73 28.48 28.95 28.01 27.36 26.48 25.87 25.04 24.27 23.54 20.17 19.63 19.19 18.67 18.34 18.00 17.70 17.30 17.07 16.71 16.31 14.07 14.10 13.97 13.97 13.94 13.79 13.77 13.67 13.61 13.53 13.43 13.36 13.23 13.11 12.99 12.68 12.55 12.45 12.30 12.19 12.08 11.99 11.85 11.80 11.67 11.56 -34.10 -32.49 -31.28 -30.09 -29.02 -28.27 -27.56 -26.99 -26.40 -25.95 -25.35 -25.02 -24.73 -24.35 -23.99 -23.88 -23.67 -23.48 -23.16 -23.05 -22.91 -22.65 -22.46 -22.24 -22.10 -21.89 K 0.02 0.04 0.05 0.07 0.09 0.10 0.14 0.13 0.14 0.15 0.16 0.19 0.20 0.23 0.26 0.47 0.50 0.52 0.55 0.57 0.59 0.60 0.63 0.63 0.67 0.69 Data Sheet P11618EJ4V0DS00 Delay Mason's U G1 G2 ns dB dB dB 27.008 25.640 25.263 24.878 24.607 25.175 25.565 24.387 25.422 24.032 23.850 21.81 19.09 16.61 14.81 13.68 12.63 10.45 11.01 10.24 9.73 8.97 8.48 7.82 7.27 6.72 4.57 4.20 3.99 3.67 3.51 3.33 3.17 3.00 2.82 2.66 2.45 4.53 4.46 4.44 4.40 4.37 4.31 4.26 4.28 4.16 4.11 4.08 4.02 3.98 3.88 3.83 2.92 2.89 2.75 2.70 2.64 2.59 2.54 2.45 2.45 2.38 2.30 0.078 0.078 0.074 0.074 0.070 0.079 0.072 0.065 0.068 0.068 0.065 0.067 0.064 0.065 0.057 0.164 0.063 0.059 0.056 0.054 0.049 0.056 0.055 0.050 0.057 0.053 5 NE34018 S-PARAMETERS MAG. AND ANG. VDS = 2.0 V, ID = 10 mA Frequency MHz S11 MAG. S21 ANG. MAG. (deg.) 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2700 2800 2900 3000 6 0.988 0.982 0.974 0.964 0.954 0.942 0.924 0.922 0.909 0.897 0.880 0.868 0.851 0.836 0.817 0.735 0.710 0.697 0.675 0.662 0.647 0.634 0.617 0.602 0.584 0.564 -18.2 -21.8 -25.0 -28.4 -31.5 -34.7 -37.8 -40.4 -43.2 -45.8 -48.4 -50.9 -53.2 -55.3 -57.6 -63.0 -65.4 -67.6 -69.4 -71.5 -73.0 -75.2 -77.3 -79.5 -81.5 -83.6 S12 ANG. MAG. (deg.) 7.217 7.184 7.070 6.995 6.928 6.797 6.707 6.607 6.506 6.387 6.286 6.179 6.055 5.937 5.829 5.570 5.453 5.354 5.242 5.148 5.057 4.977 4.880 4.819 4.734 4.640 163.2 160.0 156.9 153.8 150.8 147.9 144.9 142.3 139.5 136.8 134.4 131.7 129.3 126.9 124.7 119.4 117.0 114.8 112.8 110.9 109.0 107.1 105.1 103.4 101.4 99.5 S22 ANG. MAG. (deg.) 0.018 0.022 0.025 0.029 0.032 0.035 0.038 0.042 0.044 0.046 0.049 0.052 0.053 0.055 0.058 0.058 0.060 0.061 0.064 0.065 0.067 0.069 0.071 0.073 0.075 0.076 Data Sheet P11618EJ4V0DS00 80.7 79.7 77.5 77.4 75.0 74.4 71.9 72.7 70.6 70.4 68.6 68.2 67.1 66.5 65.7 61.7 61.2 60.0 59.6 59.4 59.5 58.6 58.7 58.4 57.6 56.6 ANG. (deg.) 0.722 0.717 0.717 0.711 0.710 0.705 0.702 0.700 0.694 0.690 0.688 0.683 0.680 0.675 0.671 0.604 0.600 0.590 0.586 0.580 0.577 0.573 0.567 0.567 0.559 0.553 -9.7 -11.6 -13.4 -15.0 -16.6 -18.1 -19.7 -20.8 -21.9 -23.4 -24.4 -25.3 -26.4 -27.1 -27.8 -27.3 -28.1 -29.1 -29.5 -30.1 -30.6 -31.2 -32.1 -32.5 -33.2 -33.8 NE34018 AMPLIFIER PARAMETERS VDS = 2.0 V, ID = 10 mA Frequency GUmax GAmax S212 S122 MHz dB dB dB dB 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2700 2800 2900 3000 36.72 34.68 33.00 31.44 30.33 29.14 27.83 27.55 26.71 25.99 25.23 24.63 23.92 23.33 22.70 20.26 19.72 19.32 18.85 18.52 18.19 17.90 17.53 17.29 16.94 16.58 17.17 17.13 16.99 16.90 16.81 16.65 16.53 16.40 16.27 16.11 15.97 15.82 15.64 15.47 15.31 14.92 14.73 14.57 14.39 14.23 14.08 13.94 13.77 13.66 13.50 13.33 -34.88 -33.03 -31.95 -30.71 -29.79 -29.03 -28.43 -27.64 -27.23 -26.69 -26.24 -25.75 -25.45 -25.15 -24.68 -24.71 -24.48 -24.29 -23.88 -23.71 -23.54 -23.21 -23.02 -22.78 -22.53 -22.43 K 0.08 0.10 0.13 0.13 0.16 0.18 0.22 0.21 0.24 0.25 0.29 0.30 0.33 0.36 0.38 0.60 0.64 0.67 0.69 0.71 0.73 0.74 0.76 0.77 0.80 0.83 Data Sheet P11618EJ4V0DS00 Delay Mason's U G1 G2 ns dB dB dB 28.512 27.821 26.935 26.358 26.420 26.588 26.416 26.641 27.042 26.181 24.840 16.35 14.42 12.88 11.48 10.48 9.51 8.35 8.23 7.59 7.08 6.48 6.08 5.58 5.21 4.78 3.37 3.05 2.89 2.64 2.50 2.36 2.23 2.08 1.95 1.81 1.66 3.20 3.14 3.13 3.06 3.04 2.98 2.95 2.93 2.86 2.81 2.79 2.73 2.70 2.65 2.60 1.97 1.94 1.86 1.83 1.78 1.76 1.73 1.69 1.68 1.63 1.59 0.089 0.089 0.086 0.087 0.083 0.081 0.081 0.074 0.077 0.075 0.068 0.072 0.068 0.067 0.061 0.148 0.066 0.062 0.054 0.054 0.051 0.054 0.056 0.048 0.056 0.053 7 NE34018 S-PARAMETERS MAG. AND ANG. VDS = 2.0 V, ID = 20 mA Frequency MHz S11 MAG. S21 ANG. MAG. (deg.) 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2700 2800 2900 3000 8 0.978 0.968 0.954 0.943 0.929 0.913 0.891 0.884 0.865 0.849 0.830 0.815 0.793 0.775 0.754 0.674 0.648 0.632 0.610 0.596 0.579 0.566 0.548 0.532 0.515 0.496 -20.1 -23.9 -27.5 -31.1 -34.4 -37.7 -40.8 -43.5 -46.4 -48.9 -51.4 -54.0 -56.3 -58.3 -60.4 -65.8 -68.1 -70.2 -71.9 -73.7 -75.2 -77.1 -79.3 -81.2 -83.0 -84.8 S12 ANG. MAG. (deg.) 9.298 9.160 9.000 8.848 8.700 8.501 8.335 8.162 7.972 7.801 7.607 7.440 7.247 7.074 6.913 6.573 6.417 6.265 6.113 5.976 5.849 5.727 5.610 5.499 5.399 5.272 160.9 157.3 153.9 150.5 147.3 144.0 141.0 138.0 135.2 132.3 129.8 127.1 124.7 122.2 119.9 115.0 112.7 110.5 108.6 106.7 105.0 103.1 101.1 99.4 97.5 95.7 S22 ANG. MAG. (deg.) 0.017 0.021 0.023 0.026 0.029 0.032 0.035 0.037 0.040 0.042 0.045 0.047 0.049 0.051 0.053 0.053 0.056 0.057 0.059 0.061 0.063 0.065 0.068 0.069 0.071 0.073 Data Sheet P11618EJ4V0DS00 82.7 80.2 79.8 77.7 76.6 74.7 74.7 74.3 74.2 71.9 71.7 71.1 70.0 69.4 68.8 66.1 65.5 64.5 64.6 64.6 65.0 63.8 64.3 63.3 64.1 62.4 ANG. (deg.) 0.637 0.635 0.632 0.627 0.627 0.621 0.618 0.617 0.613 0.607 0.606 0.603 0.599 0.598 0.593 0.528 0.526 0.516 0.515 0.510 0.509 0.507 0.502 0.502 0.498 0.493 -10.0 -11.8 -13.7 -15.3 -16.8 -18.0 -19.6 -20.5 -21.7 -23.0 -24.0 -24.7 -25.6 -26.2 -26.8 -25.1 -25.7 -26.7 -26.7 -27.3 -27.8 -28.2 -29.1 -29.4 -30.0 -30.4 NE34018 AMPLIFIER PARAMETERS VDS = 2.0 V, ID = 20 mA Frequency GUmax GAmax S212 S122 MHz dB dB dB dB 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2700 2800 2900 3000 35.28 33.54 31.81 30.66 29.62 28.49 27.38 26.91 26.08 25.38 24.70 24.13 23.43 22.90 22.33 20.40 19.92 19.50 19.08 18.74 18.41 18.13 17.79 17.51 17.22 16.88 19.37 19.24 19.09 18.94 18.79 18.59 18.42 18.24 18.03 17.84 17.62 17.43 17.20 16.99 16.79 16.35 16.15 15.94 15.72 15.53 15.34 15.16 14.98 14.80 14.65 14.44 -35.33 -33.71 -32.71 -31.61 -30.78 -29.78 -29.14 -28.63 -28.04 -27.49 -26.88 -26.49 -26.16 -25.88 -25.46 -25.44 -25.02 -24.90 -24.53 -24.25 -23.96 -23.71 -23.29 -23.18 -22.93 -22.71 K 0.12 0.16 0.18 0.21 0.24 0.28 0.31 0.32 0.34 0.38 0.40 0.42 0.46 0.49 0.52 0.72 0.75 0.79 0.81 0.82 0.84 0.85 0.86 0.88 0.89 0.92 Data Sheet P11618EJ4V0DS00 Delay Mason's U G1 G2 ns dB dB dB 29.694 28.981 27.785 27.569 27.816 28.156 27.486 28.589 27.386 28.295 26.323 13.65 12.07 10.51 9.55 8.66 7.78 6.86 6.59 6.00 5.53 5.08 4.74 4.30 3.98 3.66 2.63 2.37 2.21 2.02 1.91 1.77 1.68 1.55 1.44 1.34 1.22 2.26 2.24 2.22 2.17 2.17 2.12 2.09 2.08 2.05 2.00 1.99 1.97 1.93 1.92 1.88 1.42 1.41 1.35 1.34 1.31 1.30 1.29 1.26 1.26 1.24 1.21 0.098 0.098 0.097 0.094 0.088 0.092 0.085 0.082 0.079 0.079 0.071 0.073 0.068 0.070 0.062 0.137 0.064 0.062 0.052 0.053 0.048 0.053 0.053 0.047 0.054 0.050 9 NE34018 S-PARAMETERS MAG. AND ANG. VDS = 3.0 V, ID = 5 mA Frequency MHz S11 MAG. S21 ANG. MAG. ANG. (deg.) 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 0.991 0.984 0.982 0.973 0.970 0.964 0.944 0.947 0.938 0.929 0.920 0.911 0.901 0.890 0.878 0.815 S12 MAG. ANG. (deg.) -15.2 -18.1 -20.8 -23.8 -26.6 -29.0 -32.0 -34.2 -36.7 -38.9 -41.3 -43.6 -45.7 -47.9 -49.8 -57.5 MAG. (deg.) 79.3 79.0 76.7 77.2 74.4 73.4 70.8 70.3 69.6 68.9 67.2 66.5 65.1 64.1 62.9 58.4 0.020 0.024 0.027 0.031 0.034 0.038 0.040 0.044 0.048 0.050 0.052 0.056 0.058 0.061 0.063 0.063 165.1 162.2 159.4 156.6 154.1 151.4 148.6 146.2 143.8 141.4 139.0 136.6 134.4 132.2 130.0 123.9 5.038 5.040 4.984 4.958 4.958 4.892 4.850 4.791 4.764 4.722 4.675 4.640 4.579 4.527 4.473 4.306 S22 ANG. (deg.) 0.817 0.812 0.809 0.807 0.806 0.803 0.797 0.794 0.791 0.788 0.789 0.786 0.780 0.778 0.775 0.687 -9.8 -11.7 -13.6 -15.2 -16.8 -18.6 -20.1 -21.5 -23.1 -24.3 -25.7 -27.2 -28.3 -29.4 -30.5 -29.1 AMPLIFIER PARAMETERS VDS = 3.0 V, ID = 5 mA Frequency GUmax GAmax S212 S122 MHz dB dB dB dB 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 36.20 33.77 32.94 31.24 30.67 29.74 27.71 27.80 27.04 26.34 25.76 25.18 24.52 24.00 23.40 20.18 14.05 14.05 13.95 13.91 13.91 13.79 13.72 13.61 13.56 13.48 13.40 13.33 13.21 13.12 13.01 12.68 -34.16 -32.46 -31.29 -30.13 -29.27 -28.52 -27.86 -27.10 -26.43 -26.01 -25.69 -25.10 -24.80 -24.36 -24.05 -23.97 10 K 0.09 0.09 0.11 0.10 0.12 0.13 0.18 0.17 0.17 0.18 0.20 0.21 0.23 0.24 0.26 0.47 Data Sheet P11618EJ4V0DS00 Delay Mason's U G1 G2 ns dB dB dB 0.080 0.080 0.077 0.077 0.071 0.074 0.077 0.066 0.069 0.066 0.066 0.067 0.061 0.061 0.062 0.169 39.523 17.38 15.04 14.37 12.75 12.22 11.46 9.61 9.87 9.22 8.64 8.12 7.68 7.24 6.84 6.41 4.73 4.78 4.69 4.62 4.58 4.55 4.49 4.38 4.32 4.26 4.22 4.24 4.18 4.07 4.05 3.99 2.77 27.557 NE34018 S-PARAMETERS MAG. AND ANG. VDS = 3.0 V, ID = 10 mA Frequency MHz S11 MAG. S21 ANG. MAG. ANG. (deg.) 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 0.982 0.973 0.965 0.953 0.944 0.934 0.913 0.909 0.894 0.882 0.866 0.853 0.837 0.823 0.808 0.747 S12 MAG. ANG. (deg.) -17.5 -20.9 -24.0 -27.2 -30.3 -33.0 -36.3 -38.6 -41.3 -43.7 -46.2 -48.5 -50.6 -52.8 -54.7 -62.5 MAG. (deg.) 82.5 79.5 76.7 75.6 74.8 73.4 72.4 70.8 71.0 69.7 67.6 67.0 67.2 66.5 65.4 61.2 0.019 0.022 0.025 0.028 0.032 0.035 0.037 0.040 0.043 0.046 0.048 0.050 0.052 0.055 0.057 0.058 162.7 159.4 156.2 153.1 150.2 147.3 144.1 141.6 138.7 136.2 133.6 131.0 128.8 126.4 124.1 118.6 7.163 7.082 7.001 6.905 6.849 6.738 6.624 6.514 6.415 6.323 6.219 6.123 6.004 5.897 5.800 5.514 S22 ANG. (deg.) 0.736 0.732 0.729 0.725 0.720 0.717 0.713 0.708 0.706 0.702 0.700 0.697 0.692 0.689 0.685 0.593 -10.5 -12.4 -14.4 -16.2 -17.8 -19.5 -21.2 -22.5 -24.0 -25.2 -26.5 -27.9 -29.0 -29.9 -31.0 -28.2 AMPLIFIER PARAMETERS VDS = 3.0 V, ID = 10 mA Frequency GUmax GAmax S212 S122 MHz dB dB dB dB 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 35.08 33.03 31.88 30.40 29.55 28.64 27.29 26.89 26.11 25.51 24.82 24.28 23.64 23.12 22.61 20.25 17.10 17.00 16.90 16.78 16.71 16.57 16.42 16.28 16.14 16.02 15.87 15.74 15.57 15.41 15.27 14.83 -34.56 -33.28 -32.21 -30.97 -29.89 -29.23 -28.63 -27.89 -27.29 -26.83 -26.32 -25.98 -25.60 -25.23 -24.82 -24.80 K 0.09 0.13 0.16 0.18 0.19 0.21 0.24 0.26 0.27 0.29 0.32 0.34 0.35 0.37 0.39 0.61 Data Sheet P11618EJ4V0DS00 Delay Mason's U G1 G2 ns dB dB dB 28.504 14.59 12.69 11.69 10.38 9.66 8.93 7.79 7.59 6.97 6.53 6.02 5.65 5.25 4.91 4.59 3.55 3.38 3.34 3.29 3.24 3.18 3.14 3.08 3.02 3.00 2.95 2.92 2.89 2.83 2.80 2.75 1.88 0.093 0.093 0.088 0.086 0.081 0.082 0.088 0.070 0.080 0.068 0.074 0.072 0.062 0.066 0.064 0.152 11 NE34018 S-PARAMETERS MAG. AND ANG. VDS = 3.0 V, ID = 30 mA Frequency MHz S11 MAG. S21 ANG. MAG. ANG. (deg.) 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 0.974 0.961 0.947 0.931 0.915 0.894 0.875 0.863 0.843 0.825 0.806 0.788 0.768 0.747 0.726 0.646 S12 MAG. ANG. (deg.) -20.9 -24.8 -28.5 -32.2 -35.5 -39.0 -41.9 -44.7 -47.5 -50.1 -52.5 -55.2 -57.1 -59.2 -61.2 -66.6 MAG. (deg.) 82.5 80.4 79.9 78.7 76.8 76.4 76.3 74.8 73.8 73.5 72.1 72.6 71.8 72.5 71.2 67.4 0.016 0.018 0.022 0.025 0.028 0.030 0.032 0.035 0.036 0.039 0.042 0.044 0.046 0.048 0.050 0.050 159.9 156.1 152.5 149.1 145.6 142.3 139.2 136.2 133.3 130.4 127.9 125.2 122.6 120.2 118.1 113.2 10.260 10.103 9.901 9.688 9.505 9.260 9.057 8.850 8.618 8.399 8.182 7.980 7.770 7.550 7.356 6.989 S22 ANG. (deg.) 0.625 0.620 0.618 0.614 0.614 0.608 0.607 0.605 0.599 0.595 0.594 0.593 0.590 0.588 0.586 0.521 -9.7 -11.5 -13.3 -14.8 -16.2 -17.7 -18.9 -19.8 -20.9 -21.9 -22.8 -23.6 -24.4 -24.9 -25.5 -23.5 AMPLIFIER PARAMETERS VDS = 3.0 V, ID = 30 mA Frequency GUmax GAmax S212 S122 MHz dB dB dB dB 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 35.31 33.31 31.84 30.56 29.50 28.32 27.43 26.85 26.02 25.34 24.70 24.14 23.53 22.94 22.41 20.61 20.22 20.09 19.91 19.72 19.56 19.33 19.14 18.94 18.71 18.48 18.26 18.04 17.81 17.56 17.33 16.89 -36.03 -34.85 -33.23 -32.13 -31.12 -30.59 -29.81 -29.05 -28.76 -28.20 -27.62 -27.03 -26.74 -26.38 -26.03 -25.99 12 K 0.15 0.19 0.21 0.25 0.28 0.32 0.34 0.37 0.40 0.43 0.46 0.47 0.51 0.53 0.56 0.78 Data Sheet P11618EJ4V0DS00 Delay Mason's U G1 G2 ns dB dB dB 29.365 12.94 11.12 9.83 8.77 7.88 6.98 6.29 5.93 5.38 4.96 4.55 4.21 3.87 3.54 3.25 2.35 2.15 2.11 2.09 2.06 2.05 2.01 2.00 1.98 1.93 1.90 1.89 1.88 1.86 1.84 1.82 1.37 0.103 0.103 0.100 0.097 0.095 0.093 0.086 0.085 0.079 0.081 0.070 0.073 0.071 0.068 0.059 0.135 NE34018 NOISE PARAMETERS VDS = 2.0 V, ID = 5 mA opt Frequency NFmin. Ga (GHz) (dB) (dB) MAG. ANG. (deg.) 0.9 0.51 21.2 0.69 15 0.26 1.0 0.52 20.8 0.68 17 0.25 1.5 0.57 18.2 0.63 25 0.24 2.0 0.61 16.2 0.61 35 0.23 2.5 0.62 14.4 0.56 46 0.21 3.0 0.65 13.3 0.44 59 0.17 Rn/50 VDS = 2.0 V, ID = 10 mA opt Frequency NFmin. Ga (GHz) (dB) (dB) MAG. ANG. (deg.) 0.9 0.43 22.0 0.62 13 0.20 1.0 0.44 21.6 0.61 14 0.20 1.5 0.49 19.0 0.58 23 0.19 2.0 0.52 16.5 0.57 34 0.18 2.5 0.54 14.9 0.52 45 0.17 3.0 0.57 13.8 0.36 57 0.13 Rn/50 VCE = 3.0 V, IC = 10 mA opt Frequency NFmin. Ga (GHz) (dB) (dB) MAG. ANG. (deg.) 0.9 0.43 22.2 0.61 11 0.21 1.0 0.44 21.8 0.60 13 0.20 1.5 0.49 19.2 0.57 22 0.20 2.0 0.52 16.7 0.57 33 0.19 2.5 0.54 15.1 0.52 45 0.18 3.0 0.57 14.0 0.37 58 0.14 Rn/50 Data Sheet P11618EJ4V0DS00 13 NE34018 PACKAGE DIMENSIONS 4-PIN SUPER MINIMOLD (UNIT: mm) 2.10.2 0.3+0.1 -0.05 3 2 0.3+0.1 -0.05 (1.3) 0.3+0.1 -0.05 4 PIN CONNECTIONS 1. 2. 3. 4. 14 Source Gate Source Drain Data Sheet P11618EJ4V0DS00 0.15+0.1 -0.05 0 to 0.1 0.90.1 0.3 1 0.4+0.1 -0.05 0.65 0.60 (1.25) V63 2.00.2 1.250.1 NE34018 PRECAUTION (1) Because this device is a HJ-FET with a Schottky barrier gate structure, it is necessary that sufficient care be taken regarding static electricity and strong electric fields. Take measures against static electricity and make sure the body is earthed when mounting the device. (2) Follow the procedure below when operating the device by a gate-and-drain-independent dual power supply. * Directly ground both the source pins. * Fix VGS to approximately -2 V. * Increase VDS to a predetermined voltage level (within the recommended operating range of VDS). * Adjust VGS in line with a predetermined ID. (3) It is recommended that the bias application circuit be able to have a fixed voltage and current. (4) Adjust the I/O matching circuit after turning the bias OFF. RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your NEC sales representative. Soldering Method Soldering Conditions Recommended Condition Symbol Infrared Reflow Package peak temperature: 230 C or below, Time: 30 seconds or less (at 210 C or higher), Note Count: 3 times or less, Exposure limit: None IR30-00-3 VPS Package peak temperature: 215 C or below, Time: 40 seconds or less (at 200 C or higher), Note Count: 3 times or less, Exposure limit: None VP15-00-3 Wave Soldering Soldering bath temperature: 260 C or below, Time: 10 seconds or less, Note Count: 1 time, Exposure limit: None WS60-00-1 Partial Heating Pin temperature: 230 C or below, Time: 10 seconds or less, Note Exposure limit: None - Note After opening the dry pack, store it at 25 C or less and 65 % RH or less for the allowable storage period. Caution Do not use different soldering methods together (except for partial heating). For the details the recommended soldering conditions, refer to the document SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E). Data Sheet P11618EJ4V0DS00 15 NE34018 CAUTION The great care must be taken in dealing with the devices in this guide. The reason is that the material of the devices is GaAs (Gallium Arsenide), which is designated as harmful substance according to the law concerned. Keep the law concerned and so on, especially in case of removal. * The information in this document is current as of September, 2000. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4