ESAD25(C,N,D) (15A) (200V to 400V / 15A) Outline drawings, mm FAST RECOVERY DIODE 15.5 Max. 4.50.2 O3.20.1 5.00.1 13.0 10.0 7.20.1 1.5 19.50.2 2.0 2 3 2.2 1.6 14.5 0.2 1 3.00.2 150.2 1.6 1.1 0.5 1.5 5.45 5.45 JEDEC EIAJ Features High voltage by mesa design SC-65 Connection diagram High reliability 2 Applications ESAD25- C 1 ESAD25- N 1 ESAD25- D 1 3 2 High speed switching 3 2 Maximum ratings and characteristics 3 Absolute maximum ratings Item Symbol Rating Conditions -02 -04 Unit Repetitive peak reverse voltage VRRM 200 400 V Non-repetitive peak reverse voltage VRSM 250 450 V Average output current IO Square wave, duty=1/2, Tc=100C Surge current IFSM Sine wave 10ms Operating junction temperature Tj -40 to +150 C Storage temperature Tstg -40 to +150 C 15* 120 A A *Average forward current of centertap full wave connection Electrical characteristics (Ta=25C Unless otherwise specified ) Item Symbol Conditions Max. Unit Forward voltage drop VFM IFM=8.0A 1.3 V Reverse current IRRM VR=VRRM 0.1 mA Reverse recovery time t rr IF=0.1A, IR=0.1A 0.4 s Thermal resistance Rth(j-c) Junction to case 2.0* C/W ESAD25(C,N,D)(15A) (200V to 400V / 15A ) Characteristics Reverse characteristics Forward characteristics 300 30 100 10 30 5 IF [A] IR 10 [A] 3 3 1 1 0.5 0.3 0.3 0.1 0 0.6 0.8 1.0 1.2 1.4 1.6 0.1 1.8 0 100 200 300 VR [V] VF [V] Forward power dissipation Output current-case temperature 14 200 12 160 10 Tc 120 [C] 8 WF [W] 6 80 4 40 2 0 0 2 4 6 8 10 12 0 14 0 4 8 Io [A] 12 16 20 Io [A] Junction capacitance characteristics Surge capability 100 300 50 30 100 Cj IFSM [pF] [A] 50 10 30 5 3 10 5 10 30 VR [V] 50 100 1 3 5 10 [time] (at 50Hz) 30 ESAD25(C,N,D)(15A) (200V to 400V / 15A ) Transient thermal impedance 101 100 [C/W] 10-1 10-3 10-2 10-1 100 t [sec.] 101 102