PD- 94243 IRF4435 HEXFET(R) Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel A D S 1 8 S 2 7 D S 3 6 D G 4 5 D VDSS = -30V RDS(on) = 0.020 T o p V ie w Description These P-channel HEXFET(R) Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques. SO-8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA= 70C IDM PD @TA = 25C PD @TA = 70C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. Units -30 -8.0 -6.4 -50 2.5 1.6 0.02 20 -55 to + 150 V W/C V C Max. Units 50 C/W A W Thermal Resistance Parameter RJA www.irf.com Maximum Junction-to-Ambient 1 6/12/01 IRF4435 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current V(BR)DSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -30 --- --- --- -1.0 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. Max. Units Conditions --- --- V V GS = 0V, ID = -250A -0.019 --- V/C Reference to 25C, ID = -1mA 0.015 0.020 VGS = -10V, ID = -8.0A 0.026 0.035 VGS = -4.5V, ID = -5.0A --- --- V VDS = VGS, ID = -250A 11 --- S VDS = -15V, ID = -8.0A --- -10 VDS = -24V, VGS = 0V A --- -10 VDS = -15V, VGS = 0V, TJ = 70C --- -100 VGS = -20V nA --- 100 VGS = 20V 40 60 ID = -4.6A 7.1 --- nC VDS = -15V 8.0 --- VGS = -10V 16 24 VDD = -15V, VGS = -10V 76 110 ID = -1.0A ns 130 200 RG = 6.0 90 140 R D = 15 2320 --- VGS = 0V 390 --- pF VDS = -15V 270 --- = 1.0kHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units --- --- -2.5 --- --- -50 --- --- --- --- 34 33 -1.2 51 50 A V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = -2.5A, VGS = 0V TJ = 25C, I F = -2.5A di/dt = -100A/s D S Notes: Repetitive rating; pulse width limited by Surface mounted on FR-4 board, t 5sec. max. junction temperature. Pulse width 300s; duty cycle 2%. 2 www.irf.com IRF4435 1000 1000 VGS -15V -10V -7.0V -5.5V -4.5V -4.0V -3.5V BOTTOM -2.7V 100 100 10 1 -2.70V 20s PULSE WIDTH TJ = 25 C 0.1 0.1 1 10 10 -2.70V 1 R DS(on) , Drain-to-Source On Resistance (Normalized) -I D , Drain-to-Source Current (A) 2.0 TJ = 25 C TJ = 150 C 10 V DS = -15V 20s PULSE WIDTH 4.0 5.0 Fig 3. Typical Transfer Characteristics www.irf.com 10 100 Fig 2. Typical Output Characteristics 100 3.0 1 -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics -VGS , Gate-to-Source Voltage (V) 20s PULSE WIDTH TJ = 150 C 0.1 0.1 100 -VDS , Drain-to-Source Voltage (V) 1 2.0 VGS -15V -10V -7.0V -5.5V -4.5V -4.0V -3.5V BOTTOM -2.7V TOP -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) TOP 6.0 ID = -8.0A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = -10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF4435 VGS = Ciss = Crss = Coss = 3000 C, Capacitance (pF) 2500 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd Ciss 2000 1500 1000 Coss 500 20 ID = -4.6A VDS = -15V -VGS , Gate-to-Source Voltage (V) 3500 16 12 8 4 Crss 0 0 1 10 0 100 10 20 30 40 50 60 QG , Total Gate Charge (nC) -VDS , Drain-to-Source Voltage (V) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 100 -II D , Drain Current (A) -ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 100 10 TJ = 150 C TJ = 25 C 1 100us 1ms 10 10ms 0.1 0.4 V GS = 0 V 0.6 0.8 1.0 1.2 -VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 TA = 25 C TJ = 150 C Single Pulse 1.4 1 0.1 1 10 100 -VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF4435 8.0 0.20 6.0 -V GS(th) , Variace ( V ) -ID , Drain Current (A) 0.10 4.0 2.0 0.00 Id = -250A -0.10 -0.20 -0.30 -0.40 0.0 25 50 75 100 125 150 -50 -25 0 TC , Case Temperature ( C) 25 50 75 100 125 150 T J , Temperature ( C ) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10. Typical Vgs(th) Variance Vs. Juction Temperature 100 Thermal Response (Z thJA ) D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 P DM t1 0.1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001 0.0001 0.001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 R DS ( on) , Drain-to-Source On Resistance ( ) IRF4435 R DS(on) , Drain-to -Source Voltage ( ) 0.10 0.08 0.06 Id = -8.0A 0.04 0.02 0.00 2 4 6 8 10 12 14 -V GS, Gate -to -Source Voltage ( V ) Fig 12. Typical On-Resistance Vs. Gate Voltage 6 16 0.10 0.08 0.06 VGS= - 4.5V 0.04 0.02 VGS = -10V 0.00 0 10 20 30 -I D , Drain Current ( A ) Fig 13. Typical On-Resistance Vs. Drain Current www.irf.com 40 IRF4435 SO-8 Package Details DIM D -B- 5 8 7 6 5 1 2 3 e 6X 0.25 (.010) 4 M A M MAX .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 B .014 .018 0.36 0.46 -C- 0.10 (.004) B 8X A1 C .0075 .0098 0.19 0.25 D .189 .196 4.80 4.98 E .150 .157 3.81 3.99 e1 A 0.25 (.010) MIN A e K x 45 e1 L 8X 6 M C A S B S C 8X MILLIMETERS MAX 5 H E -A- INCHES MIN .050 BASIC 1.27 BASIC .025 BASIC 0.635 BASIC H .2284 .2440 K .011 .019 0.28 5.80 0.48 6.20 L 0.16 .050 0.41 1.27 0 8 0 8 RECOMMENDED FOOTPRINT NOTES: 0.72 (.028 ) 8X 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982. 2. CONTROLLING DIMENSION : INCH. 3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES). 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS 6.46 ( .255 ) 1.78 (.070) 8X MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006). 6 DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE.. 1.27 ( .050 ) 3X SO-8 Part Marking www.irf.com 7 IRF4435 SO-8 Tape and Reel T E R M IN A L N U M B E R 1 1 2 .3 ( .4 8 4 ) 1 1 .7 ( .4 6 1 ) 8 .1 ( .3 1 8 ) 7 .9 ( .3 1 2 ) F E E D D IR E C T IO N N O TES: 1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ). 3 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 . 3 3 0 .0 0 (1 2 .9 9 2 ) MAX. 1 4 .4 0 ( .5 66 ) 1 2 .4 0 ( .4 88 ) N O TE S : 1. C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2. O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 . Data and specifications subject to change without notice. This product has been designed and qualified for the consumer market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 6/01 8 www.irf.com