HS-1100RH S E M I C O N D U C T O R Radiation Hardened, Ultra High Speed Current Feedback Amplifier August 1996 Features Description * Electrically Screened to SMD 5962F9467602VPA The HS-1100RH is a radiation hardened high speed, wideband, fast settling current feedback amplifier. Built with Harris' proprietary, complementary bipolar UHF-1 (DI bonded wafer) process, it is the fastest monolithic amplifier available from any semiconductor manufacturer. These devices are QML approved and are processed and screened in full compliance with MIL-PRF-38535. * MIL-PRF-38535 Class V Compliant * Low Distortion (HD3, 30MHz) . . . . . . . . . . -84dBc (Typ) * Wide -3dB Bandwidth . . . . . . . . . . . . . . . 850MHz (Typ) * Very High Slew Rate . . . . . . . . . . . . . . . 2300V/s (Typ) The HS-1100RH's wide bandwidth, fast settling characteristic, and low output impedance make this amplifier ideal for driving fast A/D converters. * Fast Settling (0.1%) . . . . . . . . . . . . . . . . . . . . 11ns (Typ) * Excellent Gain Flatness (to 50MHz) . . . . . 0.05dB (Typ) * High Output Current . . . . . . . . . . . . . . . . . . 65mA (Typ) Component and composite video systems will also benefit from this amplifier's performance, as indicated by the excellent gain flatness, and 0.03%/0.05 Deg. Differential Gain/Phase specifications (RL = 75). * Fast Overdrive Recovery. . . . . . . . . . . . . . . <10ns (Typ) * Total Gamma Dose. . . . . . . . . . . . . . . . . . 300K RAD (Si) * Latch Up . . . . . . . . . . . . . . . . . . . None (DI Technology) Detailed electrical specifications are contained in SMD 5962F9467602VPA, available on the Harris Website or AnswerFAX systems (document #946760) Applications A Cross Reference Table is available on the Harris Website for conversion of Harris Part Numbers to SMDs. The address is (http://www.semi.harris.com/datasheets/smd/smd_xref. html). SMD numbers must be used to order Radiation Hardened Products. * Video Switching and Routing * Pulse and Video Amplifiers * Wideband Amplifiers * RF/IF Signal Processing Ordering Information * Flash A/D Driver * Imaging Systems TEMP. RANGE (oC) PACKAGE 5962F9467602VPA -55 to 125 8 Ld CERDIP GDIP1-T8 HFA1100IJ (Sample) -40 to 85 8 Ld CERDIP F8.3A PART NUMBER HFA11XXEVAL PKG. NO. Evaluation Board Pinout HS-1100RH MIL-STD-1835, GDIP1-T8 (CERDIP) TOP VIEW NC 1 -IN 2 +IN 3 V- 4 + 8 NC 7 V+ 6 OUT 5 NC CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures. Copyright (c) Harris Corporation 1996 1 File Number 4100.1 HS-1100RH Typical Applications Optimum Feedback Resistor An example of a good high frequency layout is the Evaluation Board shown in Figure 2. The enclosed plots of inverting and non-inverting frequency response illustrate the performance of the HS-1100RH in various gains. Although the bandwidth dependency on closed loop gain isn't as severe as that of a voltage feedback amplifier, there can be an appreciable decrease in bandwidth at higher gains. This decrease may be minimized by taking advantage of the current feedback amplifier's unique relationship between bandwidth and RF. All current feedback amplifiers require a feedback resistor, even for unity gain applications, and RF, in conjunction with the internal compensation capacitor, sets the dominant pole of the frequency response. Thus, the amplifier's bandwidth is inversely proportional to RF. The HS-1100RH design is optimized for a 510 RF at a gain of +1. Decreasing RF in a unity gain application decreases stability, resulting in excessive peaking and overshoot. At higher gains the amplifier is more stable, so RF can be decreased in a trade-off of stability for bandwidth. Driving Capacitive Loads Capacitive loads, such as an A/D input, or an improperly terminated transmission line will degrade the amplifier's phase margin resulting in frequency response peaking and possible oscillations. In most cases, the oscillation can be avoided by placing a resistor (RS) in series with the output prior to the capacitance. Figure 1 details starting points for the selection of this resistor. The points on the curve indicate the RS and CL combinations for the optimum bandwidth, stability, and settling time, but experimental fine tuning is recommended. Picking a point above or to the right of the curve yields an overdamped response, while points below or left of the curve indicate areas of underdamped performance. The table below lists recommended RF values for various gains, and the expected bandwidth. GAIN (ACL) RF () BANDWIDTH (MHz) -1 430 580 50 45 40 AV = +1 +1 510 850 +2 360 670 +5 150 520 +10 180 240 +19 270 125 RS () 35 30 25 20 15 10 5 AV = +2 0 0 PC Board Layout 40 80 120 160 200 240 280 320 360 400 LOAD CAPACITANCE (pF) The frequency response of this amplifier depends greatly on the amount of care taken in designing the PC board. The use of low inductance components such as chip resistors and chip capacitors is strongly recommended, while a solid ground plane is a must! FIGURE 1. RECOMMENDED SERIES OUTPUT RESISTOR vs LOAD CAPACITANCE RS and CL form a low pass network at the output, thus limiting system bandwidth well below the amplifier bandwidth of 850MHz. By decreasing RS as CL increases (as illustrated in the curves), the maximum bandwidth is obtained without sacrificing stability. Even so, bandwidth does decrease as you move to the right along the curve. For example, at AV = +1, RS = 50, CL = 30pF, the overall bandwidth is limited to 300MHz, and bandwidth drops to 100MHz at AV = +1, RS = 5, CL = 340pF. Attention should be given to decoupling the power supplies. A large value (10F) tantalum in parallel with a small value (0.1F) chip capacitor works well in most cases. Terminated microstrip signal lines are recommended at the input and output of the device. Capacitance directly on the output must be minimized, or isolated as discussed in the next section. Evaluation Board Care must also be taken to minimize the capacitance to ground seen by the amplifier's inverting input (-IN). The larger this capacitance, the worse the gain peaking, resulting in pulse overshoot and possible instability. To this end, it is recommended that the ground plane be removed under traces connected to -IN, and connections to -IN should be kept as short as possible. The performance of the HS-1100RH may be evaluated using the HFA11XXEVAL Evaluation Board. The layout and schematic of the board are shown in Figure 2. To order evaluation boards, please contact your local sales office. 2 HS-1100RH VH 1 +IN OUT V+ VL VGND FIGURE 2A. TOP LAYOUT FIGURE 2B. BOTTOM LAYOUT 500 500 VH R1 50 8 2 7 3 6 4 5 10F 0.1F +5V 50 IN 10F 1 OUT VL GND 0.1F GND -5V FIGURE 2C. SCHEMATIC FIGURE 2. EVALUATION BOARD SCHEMATIC AND LAYOUT Typical Performance Characteristics Device Characterized at: VSUPPLY = 5V, RF = 360, AV = +2V/V, RL = 100, Unless Otherwise Specified PARAMETERS CONDITIONS TEMPERATURE TYPICAL UNITS +25oC 2 mV Full 10 V/oC Input Offset Voltage (Note 1) VCM = 0V Average Offset Voltage Drift Versus Temperature VIO CMRR VCM = 2V +25oC 46 dB VIO PSRR VS = 1.25V +25oC 50 dB +Input Current (Note 1) VCM = 0V +25oC 25 A Average +Input Current Drift Versus Temperature Full 40 nA/oC - Input Current (Note 1) VCM = 0V +25oC 12 A Average -Input Current Drift Versus Temperature Full 40 nA/oC +Input Resistance VCM = 2V +25oC 50 k - Input Resistance +25oC 16 Input Capacitance +25oC 2.2 pF Input Noise Voltage (Note 1) f = 100kHz +25oC 4 nV/Hz f = 100kHz +25oC 18 pA/Hz f = 100kHz +25oC 21 pA/Hz Full 3.0 V +25oC 500 k +Input Noise Current (Note 1) -Input Noise Current (Note 1) Input Common Mode Range Open Loop Transimpedance AV = -1 3 HS-1100RH Typical Performance Characteristics (Continued) Device Characterized at: VSUPPLY = 5V, RF = 360, AV = +2V/V, RL = 100, Unless Otherwise Specified PARAMETERS Output Voltage Output Current (Note 1) CONDITIONS TEMPERATURE TYPICAL UNITS AV = -1, RL = 100 +25oC 3.3 V AV = -1, RL = 100 Full 3.0 V AV = -1, RL = 50 +25oC to +125oC 65 mA AV = -1, RL = 50 -55oC to 0oC 50 mA +25oC 0.1 Full 24 mA AV = -1, RF = 430, VOUT = 200mVP-P +25oC 580 MHz AV = +1, RF = 510, VOUT = 200mVP-P +25oC 850 MHz AV = +2, RF = 360, VOUT = 200mVP-P +25oC 670 MHz AV = +1, RF = 510, VOUT = 5VP-P +25oC 1500 V/s AV = +2, VOUT = 5VP-P +25oC 2300 V/s VOUT = 5VP-P +25oC 220 MHz To 30MHz, RF = 510 +25oC 0.014 dB To 50MHz, RF = 510 +25oC 0.05 dB To 100MHz, RF = 510 +25oC 0.14 dB To 100MHz, RF = 510 +25oC 0.6 Degrees 30MHz, VOUT = 2VP-P +25oC -55 dBc 50MHz, VOUT = 2VP-P +25oC -49 dBc 100MHz, VOUT = 2VP-P +25oC -44 dBc 30MHz, VOUT = 2VP-P +25oC -84 dBc 50MHz, VOUT = 2VP-P +25oC -70 dBc 100MHz, VOUT = 2VP-P +25oC -57 dBc 100MHz, RF = 510 +25oC 30 dBm 100MHz, RF = 510 +25oC 20 dBm 40MHz, RF = 510 +25oC -70 dB 100MHz, RF = 510 +25oC -60 dB 600MHz, RF = 510 +25oC -32 dB VOUT = 0.5VP-P +25oC 500 ps VOUT = 2VP-P +25oC 800 ps VOUT = 0.5VP-P, Input tR/tF = 550ps +25oC 11 % To 0.1%, VOUT = 2V to 0V, RF = 510 +25oC 11 ns To 0.05%, VOUT = 2V to 0V, RF = 510 +25oC 19 ns To 0.02%, VOUT = 2V to 0V, RF = 510 +25oC 34 ns AV = +2, RL = 75, NTSC +25oC 0.03 % AV = +2, RL = 75, NTSC +25oC 0.05 Degrees RF = 510, VIN = 5VP-P +25oC 7.5 ns DC Closed Loop Output Resistance Quiescent Supply Current (Note 1) -3dB Bandwidth (Note 1) Slew Rate Full Power Bandwidth Gain Flatness (Note 1) Linear Phase Deviation (Note 1) 2nd Harmonic Distortion (Note 1) 3rd Harmonic Distortion (Note 1) 3rd Order Intercept (Note 1) 1dB Compression Reverse Isolation (S12) Rise and Fall Time Overshoot (Note 1) Settling Time (Note 1) Differential Gain Differential Phase Overdrive Recovery Time RL = Open NOTE: 1. See Typical Performance Curves for more information. 4 HS-1100RH VSUPPLY = 5V, RF = 510, RL = 100, TA = +25oC, Unless Otherwise Specified 120 1.2 90 0.9 OUTPUT VOLTAGE (V) 60 30 0 -30 -60 0.6 0.3 0 -0.3 -0.6 -90 -0.9 -120 -1.2 5ns/DIV. 5ns/DIV. GAIN 0 -3 AV = +1 AV = +2 -6 AV = +6 -9 AV = +11 -12 PHASE 0 AV = +1 -90 AV = +2 -180 AV = +6 -270 AV = +11 0.3 1 10 100 FREQUENCY (MHz) -360 1K 0 RL = 1k -90 -180 RL = 100 RL = 1k 0.3 GAIN (dB) NORMALIZED RL = 100 RL = 50 RL = 50 RL = 100 1 10 100 FREQUENCY (MHz) -270 -360 1K PHASE (DEGREES) GAIN (dB) PHASE AV = -10 -9 AV = -20 -12 PHASE 180 AV = -1 90 AV = -5 0 1 10 100 FREQUENCY (MHz) -90 -180 1K FIGURE 6. INVERTING FREQUENCY RESPONSE (VOUT = 200mVP-P) GAIN -6 -6 0.3 RL = 1k -3 AV = -5 AV = -20 +6 0 AV = -1 -3 AV = -10 FIGURE 5. NON-INVERTING FREQUENCY RESPONSE (VOUT = 200mVP-P) +3 GAIN 0 PHASE (DEGREES) GAIN (dB) NORMALIZED FIGURE 4. LARGE SIGNAL PULSE RESPONSE (AV = +2) PHASE (DEGREES) GAIN (dB) NORMALIZED FIGURE 3. SMALL SIGNAL PULSE RESPONSE (AV = +2) RL = 1k +3 0 GAIN -3 RL = 100 RL = 50 -6 PHASE 0 RL = 50 RL = 100 -90 RL = 1k -180 -270 RL = 100 RL = 1k 0.3 FIGURE 7. FREQUENCY RESPONSE FOR VARIOUS LOAD RESISTORS (AV = +1, VOUT = 200mVP-P) 1 10 100 FREQUENCY (MHz) -360 1K FIGURE 8. FREQUENCY RESPONSE FOR VARIOUS LOAD RESISTORS (AV = +2, VOUT = 200mVP-P) 5 PHASE (DEGREES) OUTPUT VOLTAGE (mV) Typical Performance Curves HS-1100RH VSUPPLY = 5V, RF = 510, RL = 100, TA = +25oC, Unless Otherwise Specified (Continued) GAIN (dB) NORMALIZED Typical Performance Curves +20 GAIN (dB) +10 0 0.160VP-P 0.500VP-P 0.920VP-P 1.63VP-P -10 -20 -30 0.3 1 10 FREQUENCY (MHz) 100 +10 0 0.32VP-P -10 1.00VP-P -20 1.84VP-P -30 3.26VP-P 0.3 1K FIGURE 9. FREQUENCY RESPONSE FOR VARIOUS OUTPUT VOLTAGES (AV = +1) 1 10 FREQUENCY (MHz) 100 1K FIGURE 10. FREQUENCY RESPONSE FOR VARIOUS OUTPUT VOLTAGES (AV = +2) +20 +10 950 0 BANDWIDTH (MHz) GAIN (dB) NORMALIZED +20 -10 0.96VP-P TO 3.89 VP-P -20 -30 900 850 800 750 700 0.3 1 10 100 FREQUENCY (MHz) -50 1K -25 0 +25 +50 +75 +100 +125 TEMPERATURE (oC) FIGURE 11. FREQUENCY RESPONSE FOR VARIOUS OUTPUT VOLTAGES (AV = +6) FIGURE 12. -3dB BANDWIDTH vs TEMPERATURE (AV = +1) +2.0 DEVIATION (DEGREES) +1.5 GAIN (dB) 0 -0.05 -0.10 -0.15 -0.20 +1.0 +0.5 0 -0.5 -1.0 -1.5 -2.0 1 10 FREQUENCY (MHz) 0 100 15 30 45 60 75 90 105 120 135 150 FREQUENCY (MHz) FIGURE 13. GAIN FLATNESS (AV = +2) FIGURE 14. DEVIATION FROM LINEAR PHASE (AV = +2) 6 HS-1100RH Typical Performance Curves VSUPPLY = 5V, RF = 510, RL = 100, TA = +25oC, Unless Otherwise Specified (Continued) 40 35 INTERCEPT POINT (dBm) SETTLING ERROR (%) 0.6 0.4 0.2 0 -0.2 -0.4 -0.6 30 25 20 15 10 5 0 -4 1 6 11 16 21 26 TIME (ns) 31 36 41 0 46 FIGURE 15. SETTLING RESPONSE (AV = +2, VOUT = 2V) -30 -35 -40 400 -50 100MHz DISTORTION (dBc) DISTORTION (dBc) -40 -45 50MHz -50 -55 -60 100MHz -60 -70 50MHz -80 -90 30MHz 30MHz -100 -65 -110 -70 -5 -3 -1 1 3 5 7 9 OUTPUT POWER (dBm) 11 13 -5 15 -3 -1 1 3 5 7 9 11 13 15 OUTPUT POWER (dBm) FIGURE 17. 2ND HARMONIC DISTORTION vs POUT FIGURE 18. 3RD HARMONIC DISTORTION vs POUT 35 RF = 360 VOUT = 2VP-P 30 VOUT = 1VP-P OVERSHOOT (%) OVERSHOOT (%) 200 300 FREQUENCY (MHz) FIGURE 16. 3RD ORDER INTERMODULATION INTERCEPT (2-TONE) -30 38 36 34 32 30 28 26 24 22 20 18 16 14 12 10 8 6 100 VOUT = 0.5VP-P VOUT = 2VP-P 25 RF = 360 VOUT = 1VP-P RF = 360 20 VOUT = 0.5VP-P 15 RF = 510 VOUT = 2VP-P 10 5 RF = 510 VOUT = 1VP-P RF = 510 VOUT = 0.5VP-P 0 100 200 300 400 500 600 700 800 900 100 1000 INPUT RISE TIME(ps) 200 300 400 500 600 700 800 900 1000 INPUT RISE TIME(ps) FIGURE 19. OVERSHOOT vs INPUT RISE TIME (AV = +1) FIGURE 20. OVERSHOOT vs INPUT RISE TIME (AV = +2) 7 HS-1100RH VSUPPLY = 5V, RF = 510, RL = 100, TA = +25oC, Unless Otherwise Specified (Continued) 25 36 34 32 30 28 26 24 22 20 18 16 14 12 10 8 6 4 24 SUPPLY CURRENT (mA) 23 22 21 20 19 18 360 400 440 480 520 560 600 FEEDBACK RESISTOR () 640 -60 680 0 20 40 60 80 100 120 FIGURE 22. SUPPLY CURRENT vs TEMPERATURE 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 INPUT OFFSET VOLTAGE (mV) SUPPLY CURRENT (mA) -20 TEMPERATURE (oC) FIGURE 21. OVERSHOOT vs FEEDBACK RESISTOR (AV = +2, tR = 200ps, VOUT = 2VP-P) 5 -40 6 7 8 9 TOTAL SUPPLY VOLTAGE (V+ - V-, V) 10 FIGURE 23. SUPPLY CURRENT vs SUPPLY VOLTAGE 2.8 2.7 2.6 2.5 2.4 2.3 2.2 2.1 2 1.9 1.8 1.7 1.6 1.5 1.4 1.3 +IBIAS VIO -IBIAS -60 -40 -20 0 20 40 60 80 TEMPERATURE (oC) 100 120 45 42 39 36 33 30 27 24 21 18 15 12 9 6 3 0 BIAS CURRENTS (A) OVERSHOOT (%) Typical Performance Curves FIGURE 24. VIO AND BIAS CURRENTS vs TEMPERATURE 3.7 30 300 3.4 3.3 3.2 | - VOUT | 3.1 3 2.9 2.8 2.7 25 250 225 20 200 175 15 150 125 10 100 75 5 ENI eni INIiniINI+ ini+ 2.6 2.5 -60 -40 -20 0 20 40 60 80 100 0 100 120 TEMPERATURE (oC) 1K 10K 100K FREQUENCY (Hz) FIGURE 25. OUTPUT VOLTAGE vs TEMPERATURE (AV = -1, RL = 50) FIGURE 26. INPUT NOISE vs FREQUENCY 8 50 25 0 NOISE CURRENT (pA/HZ) 275 +VOUT 3.5 NOISE VOLTAGE (nV/HZ) OUTPUT VOLTAGE (V) 3.6 HS-1100RH Test Circuit V+ + 10 ICC 0.1 510 VIN NC + VX 0.1 7 100 2 470pF - 510 0.1 0.1 K2 = POSITION 1: 0.1 VX VIO = 100 X100 K2 3 1 VX 50K VOUT + 100 100 4 K3 200pF VZ 100K +IBIAS = 1K 6 DUT 510 K2 = POSITION 2: -IBIAS = - 510 2 100K (0.01%) - VZ + 10 0.1 IEE 0.1 + HA-5177 NOTES: 2. Unless otherwise noted, component value multiplier and tolerances shall be as follows: Resistors, 1%. Capacitors, F 10% V- 3. Chip Components Recommended Test Waveforms SIMPLIFIED TEST CIRCUIT FOR LARGE AND SMALL SIGNAL PULSE RESPONSE V+ (+5V) V+ (+5V) VIN RS 50 VIN VOUT + - 50 RF RS 50 2 50 VOUT + 510 - V- (-5V) RF 50 360 2 50 RG 360 V- (-5V) AV = +2 TEST CIRCUIT AV = +1 TEST CIRCUIT VOUT +2.5V 90% 90% +SR -2.5V VOUT +250mV +2.5V -SR 10% 10% 90% 90% TR, +OS -2.5V -250mV LARGE SIGNAL WAVEFORM TF, -OS 10% 10% SMALL SIGNAL WAVEFORM 9 +250mV -250mV HS-1100RH Burn-In Circuit HS-1100RH CERDIP R3 1 R2 2 R1 3 D4 8 6 4 VD2 D3 V+ 7 + C1 D1 5 C2 NOTES: R1 = R2 = 1k, 5% (Per Socket). R3 = 10k, 5% (Per Socket). C1 = C2 = 0.01F (Per Socket) or 0.1F (Per Row) Min. D1 = D2 = 1N4002 or Equivalent (Per Board). D3 = D4 = 1N4002 or Equivalent (Per Socket). V+ = +5.5V 0.5V. V- = -5.5V 0.5V. Irradiation Circuit HS-1100RH CERDIP R3 R2 1 8 2 7 R1 3 - + 6 4 V- 5 C2 NOTES: R1 = R2 = 1k, 5%. R3 = 10k, 5%. C1 = C2 = 0.1F. V+ = +5.5V 0.5V. V- = -5.5V 0.5V. 10 D3 V+ C1 HS-1100RH Die Characteristics DIE DIMENSIONS: 63 mils x 44 mils x 19 mils 1 mil (1600m x 1130m x 483m 25.4m) GLASSIVATION: Type: Nitride Thickness: 4kA 0.5kA METALLIZATION: Type: Metal 1: AICu(2%)/TiW Thickness: Metal 1: 8kA 0.4kA WORST CASE CURRENT DENSITY: 1.6 x 105 A/cm2 TRANSISTOR COUNT: 52 Type: Metal 2: AICu (2%) Thickness: Metal 2: 16kA 0.8kA SUBSTRATE POTENTIAL (Powered Up): Floating Metallization Mask Layout HS-1100RH +IN -IN V- BAL VL VH BAL V+ OUT All Harris Semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Harris Semiconductor products are sold by description only. Harris Semiconductor reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Harris is believed to be accurate and reliable. However, no responsibility is assumed by Harris or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Harris or its subsidiaries. Sales Office Headquarters For general information regarding Harris Semiconductor and its products, call 1-800-4-HARRIS NORTH AMERICA Harris Semiconductor P. O. Box 883, Mail Stop 53-210 Melbourne, FL 32902 TEL: 1-800-442-7747 (407) 729-4984 FAX: (407) 729-5321 EUROPE Harris Semiconductor Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 S E M I C O N D U C TO R 11 ASIA Harris Semiconductor PTE Ltd. No. 1 Tannery Road Cencon 1, #09-01 Singapore 1334 TEL: (65) 748-4200 FAX: (65) 748-0400