SEMICONDUCTOR
1
August 1996
HS-1100RH
Radiation Hardened, Ultra High Speed
Current Feedback Amplifier
Features
• Electrically Screened to SMD 5962F9467602VPA
• MIL-PRF-38535 Class V Compliant
• Low Distortion (HD3, 30MHz) . . . . . . . . . . -84dBc (Typ)
• Wide -3dB Bandwidth . . . . . . . . . . . . . . . 850MHz (Typ)
• Very High Slew Rate . . . . . . . . . . . . . . . 2300V/µs (Typ)
• Fast Settling (0.1%) . . . . . . . . . . . . . . . . . . . . 11ns (Typ)
• Excellent Gain Flatness (to 50MHz) . . . . . 0.05dB (Typ)
• High Output Current . . . . . . . . . . . . . . . . . . 65mA (Typ)
• Fast Overdrive Recovery. . . . . . . . . . . . . . . <10ns (Typ)
• Total Gamma Dose. . . . . . . . . . . . . . . . . . 300K RAD (Si)
• Latch Up . . . . . . . . . . . . . . . . . . . None (DI Technology)
Applications
• Video Switching and Routing
• Pulse and Video Amplifiers
• Wideband Amplifiers
• RF/IF Signal Processing
• Flash A/D Driver
• Imaging Systems
Description
The HS-1100RH is a radiation hardened high speed,
wideband, fast settling current feedback amplifier. Built with
Harris’ proprietary, complementary bipolar UHF-1 (DI
bonded wafer) process, it is the fastest monolithic amplifier
available from any semiconductor manufacturer. These
de vices are QML approv ed and are processed and screened
in full compliance with MIL-PRF-38535.
The HS-1100RH’s wide bandwidth, fast settling characteristic,
and low output impedance mak e this amplifier ideal for driving
f ast A/D conv erters.
Component and composite video systems will also benefit
from this amplifier’s performance, as indicated by the excel-
lent gain flatness, and 0.03%/0.05 Deg. Differential
Gain/Phase specifications (RL = 75Ω).
Detailed electrical specifications are contained in SMD
5962F9467602VPA, available on the Harris Website or
AnswerFAX systems (document #946760)
ACross Reference Table is available on the Harris Website
for conversion of Harris Par t Numbers to SMDs. The address
is (http://www.semi.harris.com/datasheets/smd/smd_xref.
html). SMD numbers must be used to order Radiation Hard-
ened Products.
Pinout
HS-1100RH
MIL-STD-1835, GDIP1-T8
(CERDIP)
TOP VIEW
Ordering Information
PART NUMBER TEMP.
RANGE (oC) PACKAGE PKG. NO.
5962F9467602VPA -55 to 125 8 Ld CERDIP GDIP1-T8
HFA1100IJ
(Sample) -40 to 85 8 Ld CERDIP F8.3A
HFA11XXEVAL Evaluation Board
NC
-IN
+IN
V-
1
2
3
4
8
7
6
5
NC
V+
OUT
NC
-
+
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures.
Copyright © Harris Corporation 1996 File Number 4100.1
2
Typical Applications
Optimum Feedback Resistor
The enclosed plots of inverting and non-inverting frequency
response illustrate the perf ormance of the HS-1100RH in vari-
ous gains. Although the bandwidth dependency on closed
loop gain isn’t as severe as that of a voltage feedback ampli-
fier, there can be an appreciable decrease in bandwidth at
higher gains. This decrease may be minimized by taking
advantage of the current feedback amplifier’s unique relation-
ship between bandwidth and RF. All current feedback amplifi-
ers require a feedback resistor, even for unity gain
applications, and RF, in conjunction with the internal compen-
sation capacitor, sets the dominant pole of the frequency
response. Thus, the amplifier’s bandwidth is inversely propor-
tional to RF. The HS-1100RH design is optimized for a 510Ω
RF at a gain of +1. Decreasing RF in a unity gain application
decreases stability, resulting in excessive peaking and over-
shoot. At higher gains the amplifier is more stable, so RF can
be decreased in a trade-off of stability for bandwidth.
The table below lists recommended RF values for various
gains, and the expected bandwidth.
PC Board Layout
The frequency response of this amplifier depends greatly on
the amount of care taken in designing the PC board. The
use of low inductance components such as chip resis-
tors and chip capacitors is strongly recommended,
while a solid ground plane is a must!
Attention should be given to decoupling the power supplies.
A large value (10µF) tantalum in parallel with a small value
(0.1µF) chip capacitor works well in most cases.
Terminated microstrip signal lines are recommended at the
input and output of the device. Capacitance directly on the
output must be minimized, or isolated as discussed in the
next section.
Care must also be taken to minimize the capacitance to
ground seen by the amplifier’s inverting input (-IN). The
larger this capacitance, the worse the gain peaking, resulting
in pulse overshoot and possible instability. To this end, it is
recommended that the ground plane be removed under
traces connected to -IN, and connections to -IN should be
kept as short as possible.
An example of a good high frequency layout is the Evalua-
tion Board shown in Figure 2.
Driving Capacitive Loads
Capacitive loads, such as an A/D input, or an improperly
terminated transmission line will degrade the amplifier’s
phase margin resulting in frequency response peaking and
possible oscillations. In most cases, the oscillation can be
avoided by placing a resistor (RS) in series with the output
prior to the capacitance.
Figure 1 details star ting points for the selection of this resis-
tor. The points on the curve indicate the RS and CL combi-
nations for the optimum bandwidth, stability, and settling
time, but experimental fine tuning is recommended. Picking
a point above or to the right of the curve yields an over-
damped response, while points below or left of the curve
indicate areas of underdamped performance.
RS and CL for m a low pass network at the output, thus limit-
ing system bandwidth well below the amplifier bandwidth of
850MHz. By decreasing RS as CL increases (as illustrated
in the curves), the maximum bandwidth is obtained without
sacrificing stability. Even so, bandwidth does decrease as
you move to the right along the curve. For example, at
AV = +1, RS = 50Ω, CL = 30pF, the overall bandwidth is lim-
ited to 300MHz, and bandwidth drops to 100MHz at AV = +1,
RS=5Ω, CL = 340pF.
Evaluation Board
The perf ormance of the HS-1100RH may be ev aluated using
the HFA11XXEVAL Evaluation Board.
The layout and schematic of the board are shown in
Figure 2. To order evaluation boards, please contact your
local sales office.
GAIN
(ACL) RF (Ω)BANDWIDTH
(MHz)
-1 430 580
+1 510 850
+2 360 670
+5 150 520
+10 180 240
+19 270 125
RS (Ω)
LOAD CAPACITANCE (pF)
50
45
40
35
30
25
20
15
10
5
00 40 80 120 160 200 240 280 320 360 400
AV = +1
AV = +2
FIGURE 1. RECOMMENDED SERIES OUTPUT RESIST OR vs
LOAD CAPACITANCE
HS-1100RH
3
FIGURE 2A. TOP LAYOUT FIGURE 2B. BOTTOM LAYOUT
FIGURE 2C. SCHEMATIC
FIGURE 2. EVALUATION BOARD SCHEMATIC AND LAYOUT
VH
+IN
VL V+
GND
1
V-
OUT
1
2
3
4
8
7
6
5
+5V
10µF
0.1µF
VH
50Ω
GND GND
R1
-5V
0.1µF
10µF
50Ω
IN OUT
VL
500 500
Typical Performance Characteristics
Device Characterized at: VSUPPLY = ±5V, RF = 360Ω, AV = +2V/V, RL = 100Ω, Unless Otherwise Specified
PARAMETERS CONDITIONS TEMPERATURE TYPICAL UNITS
Input Offset Voltage (Note 1) VCM = 0V +25oC2mV
Average Offset Voltage Drift Versus Temperature Full 10 µV/oC
VIO CMRR ∆VCM = ±2V +25oC46dB
VIO PSRR ∆VS = ±1.25V +25oC50dB
+Input Current (Note 1) VCM = 0V +25oC25µA
Average +Input Current Drift Versus Temperature Full 40 nA/oC
- Input Current (Note 1) VCM = 0V +25oC12µA
Average -Input Current Drift Versus Temperature Full 40 nA/oC
+Input Resistance ∆VCM = ±2V +25oC50kΩ
- Input Resistance +25oC16Ω
Input Capacitance +25oC 2.2 pF
Input Noise Voltage (Note 1) f = 100kHz +25oC 4 nV/√Hz
+Input Noise Current (Note 1) f = 100kHz +25oC 18 pA/√Hz
-Input Noise Current (Note 1) f = 100kHz +25oC 21 pA/√Hz
Input Common Mode Range Full ±3.0 V
Open Loop Transimpedance AV = -1 +25oC 500 kΩ
HS-1100RH
4
Output Voltage AV = -1, RL = 100Ω+25oC±3.3 V
AV = -1, RL = 100ΩFull ±3.0 V
Output Current (Note 1) AV = -1, RL = 50Ω+25oC to +125oC±65 mA
AV = -1, RL = 50Ω-55oC to 0oC±50 mA
DC Closed Loop Output Resistance +25 oC 0.1 Ω
Quiescent Supply Current (Note 1) RL = Open Full 24 mA
-3dB Bandwidth (Note 1) AV = -1, RF = 430Ω, VOUT = 200mVP-P +25oC 580 MHz
AV = +1, RF = 510Ω, VOUT = 200mVP-P +25oC 850 MHz
AV = +2, RF = 360Ω, VOUT = 200mVP-P +25oC 670 MHz
Slew Rate AV = +1, RF = 510Ω, VOUT = 5VP-P +25oC 1500 V/µs
AV = +2, VOUT = 5VP-P +25oC 2300 V/µs
Full Power Bandwidth VOUT = 5VP-P +25oC 220 MHz
Gain Flatness (Note 1) To 30MHz, RF = 510Ω+25oC±0.014 dB
To 50MHz, RF = 510Ω+25oC±0.05 dB
To 100MHz, RF = 510Ω+25oC±0.14 dB
Linear Phase Deviation (Note 1) To 100MHz, RF = 510Ω+25oC±0.6 Degrees
2nd Harmonic Distortion (Note 1) 30MHz, VOUT = 2VP-P +25oC -55 dBc
50MHz, VOUT = 2VP-P +25oC -49 dBc
100MHz, VOUT = 2VP-P +25oC -44 dBc
3rd Harmonic Distortion (Note 1) 30MHz, VOUT = 2VP-P +25oC -84 dBc
50MHz, VOUT = 2VP-P +25oC -70 dBc
100MHz, VOUT = 2VP-P +25oC -57 dBc
3rd Order Intercept (Note 1) 100MHz, RF = 510Ω+25oC 30 dBm
1dB Compression 100MHz, RF = 510Ω+25oC 20 dBm
Reverse Isolation (S12) 40MHz, RF = 510Ω+25oC -70 dB
100MHz, RF = 510Ω+25oC -60 dB
600MHz, RF = 510Ω+25oC -32 dB
Rise and Fall Time VOUT = 0.5VP-P +25oC 500 ps
VOUT = 2VP-P +25oC 800 ps
Overshoot (Note 1) VOUT = 0.5VP-P, Input tR/tF = 550ps +25oC11%
Settling Time (Note 1) To 0.1%, VOUT = 2V to 0V, RF = 510Ω+25oC11ns
To 0.05%, V OUT = 2V to 0V, RF = 510 Ω+25oC19ns
To 0.02%, V OUT = 2V to 0V, RF = 510 Ω+25oC34ns
Differential Gain AV = +2, RL = 75Ω, NTSC +25oC 0.03 %
Differential Phase AV = +2, RL = 75Ω, NTSC +25oC 0.05 Degrees
Overdrive Recovery Time RF = 510Ω, VIN = 5VP-P +25oC 7.5 ns
NOTE:
1. See Typical Performance Curves for more information.
Typical Performance Characteristics
(Continued)
Device Characterized at: VSUPPLY = ±5V, RF = 360Ω, AV = +2V/V, RL = 100Ω, Unless Otherwise Specified
PARAMETERS CONDITIONS TEMPERATURE TYPICAL UNITS
HS-1100RH
5
Typical P erf ormance Curves
VSUPPLY = ±5V, RF = 510Ω, RL = 100Ω, TA = +25oC, Unless Otherwise Specified
FIGURE 3. SMALL SIGNAL PULSE RESPONSE (AV = +2) FIGURE 4. LARGE SIGNAL PULSE RESPONSE (AV = +2)
FIGURE 5. NON-INVERTING FREQUENCY RESPONSE
(VOUT = 200mVP-P) FIGURE 6. INVERTING FREQUENCY RESPONSE
(VOUT = 200mVP-P)
FIGURE 7. FREQUENCY RESPONSE FOR VARIOUS LO AD
RESISTORS (AV = +1, VOUT = 200mVP-P) FIGURE 8. FREQUENCY RESPONSE FOR VARIOUS LO AD
RESISTORS (AV = +2, VOUT = 200mVP-P)
120
5ns/DIV.
90
60
30
0
-30
-60
-90
-120
OUTPUT VOLTAGE (mV)
5ns/DIV.
OUTPUT VOLTAGE (V)
1.2
0.9
0.6
0.3
0
-0.3
-0.6
-0.9
-1.2
FREQUENCY (MHz)
0
-3
-6
-9
-12
GAIN (dB) NORMALIZED
0.3 1 10 100 1K
0
-90
-180
-270
-360
PHASE
GAIN
AV = +1
AV = +1
AV = +11
AV = +2
AV = +6
AV = +11
AV = +2
AV = +6
PHASE (DEGREES)
FREQUENCY (MHz)
PHASE
GAIN
0
-3
-6
-9
-12
GAIN (dB) NORMALIZED
0.3 1 10 100 1K
180
90
0
-90
-180
AV = -1
AV = -1
AV = -20
AV = -5
AV = -10
AV = -20
AV = -5
AV = -10
PHASE (DEGREES)
FREQUENCY (MHz)
+6
+3
0
-3
-6
GAIN (dB)
0.3 1 10 100 1K
0
-90
-180
-270
-360
PHASE
GAIN
RL = 1kΩ
RL = 100Ω
RL = 50Ω
RL = 1kΩ
PHASE (DEGREES)
RL = 50Ω
RL = 100Ω
RL = 1kΩ
RL = 100Ω
FREQUENCY (MHz)
PHASE
GAIN
+3
0
-3
-6
GAIN (dB) NORMALIZED
0.3 1 10 100 1K
0
-90
-180
-270
-360
PHASE (DEGREES)
RL = 100Ω
RL = 1kΩ
RL = 50Ω
RL = 100ΩRL = 1kΩ
RL = 50Ω
RL = 100Ω
RL = 1kΩ
HS-1100RH
6
FIGURE 9. FREQUENCY RESPONSE FOR VARIOUS OUTPUT
VOLTAGES (AV = +1) FIGURE 10. FREQUENCY RESPONSE FOR VARIOUS OUTPUT
VOLTAGES (AV = +2)
FIGURE 11. FREQUENCY RESPONSE FOR VARIOUS OUTPUT
VOLTAGES (AV = +6) FIGURE 12. -3dB BANDWIDTH vs TEMPERATURE (AV = +1)
FIGURE 13. GAIN FLATNESS (AV = +2) FIGURE 14. DEVIATION FROM LINEAR PHASE (AV = +2)
Typical P erf ormance Curves
VSUPPLY = ±5V, RF = 510Ω, RL = 100Ω, TA = +25oC, Unless Otherwise Specified (Continued)
FREQUENCY (MHz)
+20
+10
0
-10
-20
GAIN (dB)
0.3 1 10 100 1K
-30
0.160VP-P
0.500VP-P
0.920VP-P
1.63VP-P
FREQUENCY (MHz)
+20
+10
0
-10
-20
GAIN (dB) NORMALIZED
0.3 1 10 100 1K
-30
0.32VP-P
1.00VP-P
1.84VP-P
3.26VP-P
FREQUENCY (MHz)
+20
+10
0
-10
-20
GAIN (dB) NORMALIZED
0.3 1 10 100 1K
-30 3.89 VP-P
0.96VP-P
TO
TEMPERATURE (oC)
950
900
850
800
750
BANDWIDTH (MHz)
-50 -25 0 +75 +125
700
+25 +50 +100
FREQUENCY (MHz)
0
-0.05
-0.10
GAIN (dB)
1 10 100
-0.15
-0.20
+2.0
+1.5
+1.0
+0.5
0
-0.5
-1.0
-1.5
-2.0
0 15 30 45 60 75 90 105 120 135 150
FREQUENCY (MHz)
DEVIATION (DEGREES)
HS-1100RH
7
FIGURE 15. SETTLING RESPONSE (AV = +2, VOUT = 2V) FIGURE 16. 3RD ORDER INTERMODULATION INTERCEPT
(2-TONE)
FIGURE 17. 2ND HARMONIC DISTORTION vs POUT FIGURE 18. 3RD HARMONIC DISTORTION vs POUT
FIGURE 19. OVERSHOOT vs INPUT RISE TIME (AV = +1) FIGURE 20. OVERSHOOT vs INPUT RISE TIME (AV = +2)
Typical P erf ormance Curves
VSUPPLY = ±5V, RF = 510Ω, RL = 100Ω, TA = +25oC, Unless Otherwise Specified (Continued)
TIME (ns)
0.6
0.4
0.2
0
SETTLING ERROR (%)
-4 1 6 21 31
-0.2
11 16 26 36 41 46
-0.4
-0.6
FREQUENCY (MHz)
40
35
30
25
20
INTERCEPT POINT (dBm)
0 100 200
15
300 400
10
5
0
OUTPUT POWER (dBm)
-30
-35
-40
-45
-50
DISTORTION (dBc)
-5 3
-55
-60
-65
-70 -3 -1 1 5 7 9 11 13 15
100MHz
50MHz
30MHz
OUTPUT POWER (dBm)
-30
-40
-50
-60
-70
DISTORTION (dBc)
-5 3
-80
-90
-100
-110 -3 -1 1 5 7 9 11 13 15
100MHz
50MHz
30MHz
INPUT RISE TIME(ps)
38
36
34
32
30
OVERSHOOT (%)
100 500
28
26
24
22
200 300 400 600 700 800 900 1000
VOUT = 1VP-P
VOUT = 2VP-P
VOUT = 0.5VP-P
20
18
16
14
12
10
8
6
INPUT RISE TIME(ps)
35
30
25
20
15
OVERSHOOT (%)
100 500
10
5
0200 300 400 600 700 800 900 1000
RF = 360Ω
VOUT = 2VP-P
RF = 360Ω
VOUT = 1VP-P
RF = 360Ω
VOUT = 0.5VP-P
RF = 510Ω
VOUT = 0.5VP-P
RF = 510Ω
VOUT = 1VP-P
RF = 510Ω
VOUT = 2VP-P
HS-1100RH
8
FIGURE 21. O VERSHOO T vs FEEDB A CK RESIST OR (AV = +2,
tR = 200ps, VOUT = 2VP-P) FIGURE 22. SUPPLY CURRENT vs TEMPERATURE
FIGURE 23. SUPPLY CURRENT vs SUPPLY VOLTAGE FIGURE 24. VIO AND BIAS CURRENTS vs TEMPERATURE
FIGURE 25. OUTPUT V OLTAGE vs TEMPERATURE (AV = -1,
RL = 50Ω)FIGURE 26. INPUT NOISE vs FREQUENCY
Typical P erf ormance Curves
VSUPPLY = ±5V, RF = 510Ω, RL = 100Ω, TA = +25oC, Unless Otherwise Specified (Continued)
FEEDBACK RESISTOR (Ω)
36
34
32
30
OVERSHOOT (%)
360 520
28
26
24
22
400 440 480 560 600 640 680
20
18
16
14
12
10
8
6
4
TEMPERATURE (oC)
25
24
23
22
21
SUPPLY CURRENT (mA)
-60 20
20
19
18 -40 -20 0 40 60 80 100 120
TOTAL SUPPLY VOLTAGE (V+ - V-, V)
22
17
15
13
11
SUPPLY CURRENT (mA)
59
9
7
5
678 10
21
20
19
6
8
10
12
14
16
18
TEMPERATURE (oC)
45
42
39
36
33
BIAS CURRENTS (µA)
-60 20
30
27
24
-40 -20 0 40 60 80 100 120
21
18
15
12
9
6
3
0
2.8
2.7
2.6
2.5
2.4
INPUT OFFSET VOLTAGE (mV)
2.3
2.2
2.1
2
1.9
1.8
1.7
1.6
1.5
1.4
1.3
+IBIAS
VIO
-IBIAS
TEMPERATURE (oC)
3.7
3.6
3.5
3.4
OUTPUT VOLTAGE (V)
-60 20
3.3
3.2
3.1
3
-40 -20 0 40 60 80 100
2.9
2.8
2.7
2.6
2.5 120
| - VOUT |
+VOUT
300
275
250
225
200
175
150
125
100
75
50
25
0
30
25
20
15
10
5
0
100 1K 10K 100K
FREQUENCY (Hz)
NOISE VOLTAGE (nV/√HZ)
NOISE CURRENT (pA/√HZ)
eni
ini-
ini+
ENI
INI-
INI+
HS-1100RH
9
Test Circuit
Test Waveforms
SIMPLIFIED TEST CIRCUIT FOR LARGE AND SMALL SIGNAL PULSE RESPONSE
AV = +1 TEST CIRCUIT AV = +2 TEST CIRCUIT
LARGE SIGNAL WAVEFORM SMALL SIGNAL WAVEFORM
NOTES:
2. Unless otherwise noted, component value
multiplier and tolerances shall be as follows:
Resistors, Ω±1%.
Capacitors, µF±10%
3. Chip Components Recommended
V+
ICC 10 0.1
7
DUT
-
+
2
3
4
510
VIN
-
+
HA-5177
200pF
100K (0.01%)
VZ
VX
X100 -
+470pF
VIO = VX
100
+IBIAS = VZ
100K
10 0.1
V-
IEE
-IBIAS = VX
50K K3
100 100
VOUT
6
+
+
0.1
100
0.1
NC
510
0.1
1K
510
510
0.1
K2
2
1
K2 = POSITION 1:
K2 = POSITION 2:
0.1
-
+
VIN
RS
50Ω
V+ (+5V)
RF
510ΩV- (-5V)
VOUT
50Ω
50Ω2-
+
VIN
RS
50ΩRF
V+ (+5V)
V- (-5V)
360Ω
RG
360Ω
VOUT
50Ω
50Ω2
+2.5V
-SR
+2.5V
+SR
VOUT
-2.5V -2.5V
90%
10%
90%
10%
90%
10%
90%
10%
+250mV
TF, -OS
+250mV
TR, +OS
VOUT
-250mV -250mV
HS-1100RH
10
Burn-In Circuit
HS-1100RH CERDIP
NOTES:
R1 = R2 = 1kΩ,±5% (Per Socket).
R3 = 10kΩ,±5% (Per Socket).
C1 = C2 = 0.01µF (Per Socket) or 0.1µF (Per Row) Min.
D1 = D2 = 1N4002 or Equivalent (Per Board).
D3 = D4 = 1N4002 or Equivalent (Per Socket).
V+ = +5.5V ±0.5V.
V- = -5.5V ±0.5V.
Irradiation Circuit
HS-1100RH CERDIP
NOTES:
R1 = R2 = 1kΩ,±5%.
R3 = 10kΩ,±5%.
C1 = C2 = 0.1µF.
V+ = +5.5V ± 0.5V.
V- = -5.5V ± 0.5V.
1
2
3
4
8
7
6
5
V+
C1 D1
D2 C2
V- D4
D3
R3
R2
R1 -
+
1
2
3
4
8
7
6
5
V+
C1
C2
V-
D3
R3
R2
R1 -
+
HS-1100RH
11
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Harris Semiconductor products are sold by description only. Harris Semiconductor reser ves the right to make changes in circuit design and/or specifications at
any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Harris is
believed to be accurate and reliable. However, no responsibility is assumed by Harris or its subsidiaries for its use; nor for any infringements of patents or other
rights of third parties which ma y result from its use . No license is g r anted b y implication or otherwise under any patent or patent rights of Harris or its subsidiaries.
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NORTH AMERICA
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P. O. Box 883, Mail Stop 53-210
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TEL: 1-800-442-7747
(407) 729-4984
FAX: (407) 729-5321
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Mercure Center
100, Rue de la Fusee
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No. 1 Tannery Road
Cencon 1, #09-01
Singapore 1334
TEL: (65) 748-4200
FAX: (65) 748-0400
SEMICONDUCTOR
Die Characteristics
DIE DIMENSIONS:
63 mils x 44 mils x 19 mils ±1 mil
(1600µm x 1130µm x 483µm±25.4µm)
METALLIZATION:
Type: Metal 1: AICu(2%)/TiW
Thickness: Metal 1: 8kű0.4kÅ
Type: Metal 2: AICu (2%)
Thickness: Metal 2: 16kű0.8kÅ
GLASSIVATION:
Type: Nitride
Thickness: 4kű0.5kÅ
WORST CASE CURRENT DENSITY:
1.6 x 105 A/cm2
TRANSISTOR COUNT: 52
SUBSTRATE POTENTIAL (Powered Up): Floating
Metallization Mask Layout
HS-1100RH
+IN
V-
VL
BAL
OUT
-IN
BAL
VH
V+
HS-1100RH
