1 Publication Order Number :
NVATS5A106PLZ/D
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© Semiconductor Components Industries, LLC, 2016
June 2016 - Rev. 0
NVATS5A106PLZ
Power MOSFET
40 V, 25 mΩ, 33 A, P-Channel
Automotive Power M OSFET designed for com pact and efficient designs and
including high thermal performance.
AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive
applications.
Features
Low On-Resistance
High Current Capability
100% Avalanche Tested
AEC-Q101 qualified and PPAP capable
ATPAK package is pin-compatible with DPAK (TO-252)
Pb-Free, Halogen Free and RoHS compliance
Typical Applications
Reverse Battery Protection
Load Switch
Automotive Front Lighting
Automotive Body Controllers
SPECIFICATIONS
ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1)
Parameter Symbol Value Unit
Drain to Source Voltage VDSS 40 V
Gate to Source Voltage VGSS 20 V
Drain Current (DC) ID 33 A
Drain Current (Pulse)
PW 10 s, duty cycle 1% IDP 100 A
Power Dissipation
Tc = 25C PD 48 W
Operating Junction and
Storage Temperature Tj, Tstg 55 to +175 C
Avalanche Energy (Single Pulse) (Note 2) EAS 30 mJ
Avalanche Current (Note 3) IAV 15 A
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
2 : VDD = 10V, L = 200 H, IAV = 15 A
3 : L ≤ 200 H, Single pulse
THERMAL RESISTANCE RATINGS
Parameter Symbol Value Unit
Junction to Case Steady State (Tc = 25C) RJC 3.1
C/W
Junction to Ambient (Note 4) RJA 80.5
C/W
Note 4 : Surface mounted on FR4 board using a 130 mm2, 1 oz. Cu pad.
ELECTRICAL CONNECTION
P-Channel
VDSS R
DS(on) Max ID Max
40 V 25 mΩ @ 10 V 33 A
41 mΩ @ 4.5 V
1
3
2,4
1 : Gate
2 : Drain
3 : Source
4 : Drain
ORDERING INFORMATION
See detailed ordering and shipping
information on page 6 of this data sheet.
MARKING
12
3
4
ATPA
K
NVATS5A106PLZ
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2
ELECTRICAL CHARACTERISTICS at Ta 25C (Note 5)
Parameter Symbol Conditions Value Unit
min typ max
Drain to Source Breakdown Voltage V(BR)DSS ID = 1 mA, VGS = 0 V 40 V
Zero-Gate Voltage Drain Current IDSS VDS = 40 V, VGS = 0 V
1 A
Gate to Source Leakage Current IGSS VGS = 16 V, VDS = 0 V
10 A
Gate Threshold Voltage VGS(th) VDS = 10 V, ID = 1 mA 1.2 2.6 V
Forward Transconductance gFS VDS = 10 V, ID = 15 A 28 S
Static Drain to Source On-State
Resistance
RDS(on)1 ID = 15 A, VGS = 10 V 19 25
m
RDS(on)2 ID = 8 A, VGS = 4.5 V 29 41
m
Input Capacitance Ciss
VDS = 20 V, f = 1 MHz
1,380 pF
Output Capacitance Coss 210 pF
Reverse Transfer Capacitance Crss 150 pF
Turn-ON Delay Time td(on)
See Fig.1
12 ns
Rise Time tr 120 ns
Turn-OFF Delay Time td(off) 110 ns
Fall Time tf 90 ns
Total Gate Charge Qg
VDS = 20 V, VGS = 10 V, ID = 30 A
29 nC
Gate to Source Charge Qgs 6.4 nC
Gate to Drain “Miller” Charge Qgd 5.9 nC
Forward Diode Voltage VSD IS = 30 A, VGS = 0 V 0.97 1.5 V
Note 5 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Fig.1 Switching Time Test Circuit
NVATS5A106PLZ
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3
NVATS5A106PLZ
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4
NVATS5A106PLZ
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5
PACKAGE DIMENSIONS
unit : mm
1 : Gate
2 : Drain
3 : Source
4 : Drain
DPAK (Single Gauge) / ATPAK
CASE 369AM
ISSUE O
3
2
1
4
6.5
6.71.6 2
2.3 2.3
1.5
RECOMMENDED
SOLDERING FOOTPRINT
NVATS5A106PLZ
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6
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ORDERING INFORMATION
Device Marking Package Shipping (Qty / Packing)
NVATS5A106PLZT4G ATP106
DPAK(Single Gauge) / ATPAK
(Pb-Free / Halogen Free) 3,000 / Tape & Reel
† For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF
Note on usage : Since the NVATS5A106PLZ is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
