74AUP1G08GM,132 - NXP Semiconductors

1. General description

The 74AUP1G08 provides the single 2-input AND function.

Schmitt-trigger action at all inputs makes the circuit tolerant to slower input rise and fall

times across the entire VCC range fr om 0.8 V to 3.6 V.

This device ensures a very low static and dynamic power consumption across the entire

VCC range from 0.8 V to 3.6 V.

This device is fully specified for partial Power-down applications using IOFF.

The IOFF circuitry disables the outp u t, pr eve n tin g the damaging backflow current through

the device when it is powered down.

2. Features and benefits

Wide supply voltage range from 0.8 V to 3.6 V

High noise immunity

Complies with JEDEC standards:

JESD8-12 (0.8 V to 1.3 V)

JESD8-11 (0.9 V to 1.65 V)

JESD8-7 (1.2 V to 1.95 V)

JESD8-5 (1.8 V to 2.7 V)

JESD8-B (2.7 V to 3.6 V)

ESD protection:

HBM JESD22-A114F Class 3A exceeds 5000 V

MM JESD22-A115-A exceeds 20 0 V

CDM JESD22-C101E exceeds 1000 V

Low static power consumption; ICC = 0.9 μA (maximum)

Latch-up pe rform a nc e exceeds 100 mA per JESD 78 Cl as s II

Inputs accept voltages up to 3.6 V

Low noise overshoot and undershoot < 10 % of VCC

IOFF circuitry provides partial Power-down mode operation

Multiple package options

Specified from −40 °Cto+85°C and −40 °Cto+125°C

74AUP1G08

Low-power 2-input AND gate

Rev. 6 — 22 June 2012 Product data sheet

Product data sheet Rev. 6 — 22 June 2012 2 of 21

NXP Semiconductors 74AUP1G08

Low-power 2-input AND gate

3. Ordering information

4. Marking

[1] The pin 1 indicator is located on the lower left corner of the device, below the marking code.

5. Functional diagram

Table 1. Ordering information

Type number Package

Temperature range Name Description Version

74AUP1G08GW −40 °C to +125 °C TSSOP5 plastic thin shrink small outline package; 5 leads;

body width 1.25 mm SOT353-1

74AUP1G08GM −40 °C to +125 °C XSON6 plastic extremely thin small outline package; no leads;

6 terminals; body 1 ×1.45 ×0.5 mm SOT886

74AUP1G08GF −40 °C to +125 °C XSON6 plastic extremely thin small outline package; no leads;

6 terminals; body 1 ×1×0.5 mm SOT891

74AUP1G08GN −40 °C to +125 °C XSON6 extremely thin small outline package; no leads;

6 terminals; body 0.9 ×1.0 ×0.35 mm SOT1115

74AUP1G08GS −40 °C to +125 °C XSON6 extremely thin small outline package; no leads;

6 terminals; body 1.0 ×1.0 ×0.35 mm SOT1202

74AUP1G08GX −40 °C to +125 °C X2SON5 X2SON5: plastic thermal enhanced extremely thin

small outline package; no leads; 5 terminals;

body 0.8 ×0.8 ×0.35 mm

SOT1226

Table 2. Marking

Type number Marking code[1]

74AUP1G08GW pE

74AUP1G08GM pE

74AUP1G08GF pE

74AUP1G08GN pE

74AUP1G08GS pE

74AUP1G08GX pE

Fig 1. Logic symbol Fig 2. IEC logic symbol Fig 3. Logic diagram

mna113

mna114

mna221

Product data sheet Rev. 6 — 22 June 2012 3 of 21

NXP Semiconductors 74AUP1G08

Low-power 2-input AND gate

6. Pinning information

6.1 Pinning

6.2 Pin description

Fig 4. Pin configu ration SOT353-1 Fig 5. Pin configuration SOT886

74AUP1G08

GND Y

001aaf025

74AUP1G08

001aaf026

GND

n.c.

VCC

Transparent top view

Fig 6. Pin configu ration SOT891, SOT1115 and

SOT1202 Fig 7. Pin configuration SOT1226 (X2SON5)

74AUP1G08

001aaf027

GND

n.c.

VCC

Transparent top view

BVCC

GND

aaa-003000

Transparent top view

74AUP1G08

Table 3. Pin description

Symbol Pin Description

TSSOP5 and X2SON5 XSON6

B 1 1 data input

A 2 2 data input

GND 3 3 ground (0 V)

Y 4 4 data output

n.c. - 5 not connected

VCC 5 6 supply voltage

Product data sheet Rev. 6 — 22 June 2012 4 of 21

NXP Semiconductors 74AUP1G08

Low-power 2-input AND gate

7. Functional description

[1] H = HIGH voltage level;

L = LOW voltage level.

8. Limiting values

[1] The minimum input and output voltage ratings may be exceeded if the input and output current ratings are observed.

[2] For TSSOP5 packages: above 87.5 °C the value of Ptot derates linearly with 4.0 mW/K.

For XSON6 and X2SON5 packages: above 118 °C the value of Ptot derates linearly with 7.8 mW/K.

9. Recommended operating conditions

Table 4. Function table[1]

Input Output

A B Y

LL L

LH L

HL L

HH H

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).

Symbol Parameter Conditions Min Max Unit

VCC supply voltage −0.5 +4.6 V

IIK input clamping current VI<0V −50 - mA

VIinput voltage [1] −0.5 +4.6 V

IOK output clamping current VO<0V −50 - mA

VOoutput voltage Active mode an d Pow e r-d ow n m ode [1] −0.5 +4.6 V

IOoutput current VO=0 VtoV

CC -±20 mA

ICC supply current - +50 mA

IGND groun d curre nt −50 - mA

Tstg storage temperature −65 +150 °C

Ptot total power dissipation Tamb =−40 °C to +125 °C[2] -250mW

Table 6. Recommended operating con ditions

Symbol Parameter Conditions Min Max Unit

VCC supply voltage 0.8 3.6 V

VIinput voltage 0 3.6 V

VOoutput voltage Active mode 0 VCC V

Power-down mode; VCC =0V 0 3.6 V

Tamb ambient temperature −40 +125 °C

Δt/ΔV input transition rise and fall rate VCC = 0.8 V to 3.6 V 0 200 ns/V

Product data sheet Rev. 6 — 22 June 2012 5 of 21

NXP Semiconductors 74AUP1G08

Low-power 2-input AND gate

10. Static characteristics

Table 7. Static characteristics

At recommended operating conditions; voltages are referenced to GND (ground = 0 V).

Symbol Parameter Conditions Min Typ Max Unit

Tamb = 25 °C

VIH HIGH-level input voltage VCC = 0.8 V 0.70 × VCC -- V

VCC = 0.9 V to 1.95 V 0.65 × VCC -- V

VCC = 2.3 V to 2.7 V 1.6 - - V

VCC = 3.0 V to 3.6 V 2.0 - - V

VIL LOW-level input voltage VCC = 0.8 V - - 0.30 × VCC V

VCC = 0.9 V to 1.95 V - - 0.35 × VCC V

VCC = 2.3 V to 2.7 V - - 0.7 V

VCC = 3.0 V to 3.6 V - - 0.9 V

VOH HIGH-level output voltage VI = VIH or VIL

IO = −20 μA; VCC = 0.8 V to 3.6 V VCC − 0.1 - - V

IO = −1.1 mA; VCC = 1.1 V 0.75 × VCC -- V

IO = −1.7 mA; VCC = 1.4 V 1.11 - - V

IO = −1.9 mA; VCC = 1.65 V 1.32 - - V

IO = −2.3 mA; VCC = 2.3 V 2.05 - - V

IO = −3.1 mA; VCC = 2.3 V 1.9 - - V

IO = −2.7 mA; VCC = 3.0 V 2.72 - - V

IO = −4.0 mA; VCC = 3.0 V 2.6 - - V

VOL LOW-level output voltage VI = VIH or VIL

IO = 20 μA; VCC = 0.8 V to 3.6 V - - 0.1 V

IO = 1.1 mA; VCC = 1.1 V - - 0.3 × VCC V

IO = 1.7 mA; VCC = 1.4 V - - 0.31 V

IO = 1.9 mA; VCC = 1.65 V - - 0.31 V

IO = 2.3 mA; VCC = 2.3 V - - 0.31 V

IO = 3.1 mA; VCC = 2.3 V - - 0.44 V

IO = 2.7 mA; VCC = 3.0 V - - 0.31 V

IO = 4.0 mA; VCC = 3.0 V - - 0.44 V

IIinput leakage current VI = GND to 3.6 V; VCC = 0 V to 3.6 V - - ±0.1 μA

IOFF power-off leakage current VI or VO = 0 V to 3.6 V; VCC = 0 V - - ±0.2 μA

ΔIOFF additional power-off

leakage current VI or VO = 0 V to 3.6 V;

VCC =0Vto0.2V --±0.2 μA

ICC supply current VI = GND or VCC; IO = 0 A;

VCC = 0.8 V to 3.6 V --0.5μA

ΔICC additional supply current VI = VCC − 0.6 V; IO = 0 A;

VCC =3.3V [1] --40μA

CIinput capacitance VCC = 0 V to 3.6 V; VI = GND or VCC -0.8-pF

COoutput capacitance VO = GND; VCC = 0 V - 1.7 - pF

Product data sheet Rev. 6 — 22 June 2012 6 of 21

NXP Semiconductors 74AUP1G08

Low-power 2-input AND gate

Tamb = −40 °C to +85 °C

VIH HIGH-level input voltage VCC = 0.8 V 0.70 × VCC -- V

VCC = 0.9 V to 1.95 V 0.65 × VCC -- V

VCC = 2.3 V to 2.7 V 1.6 - - V

VCC = 3.0 V to 3.6 V 2.0 - - V

VIL LOW-level input voltage VCC = 0.8 V - - 0.30 × VCC V

VCC = 0.9 V to 1.95 V - - 0.35 × VCC V

VCC = 2.3 V to 2.7 V - - 0.7 V

VCC = 3.0 V to 3.6 V - - 0.9 V

VOH HIGH-level output voltage VI = VIH or VIL

IO = −20 μA; VCC = 0.8 V to 3.6 V VCC − 0.1 - - V

IO = −1.1 mA; VCC = 1.1 V 0.7 × VCC -- V

IO = −1.7 mA; VCC = 1.4 V 1.03 - - V

IO = −1.9 mA; VCC = 1.65 V 1.30 - - V

IO = −2.3 mA; VCC = 2.3 V 1.97 - - V

IO = −3.1 mA; VCC = 2.3 V 1.85 - - V

IO = −2.7 mA; VCC = 3.0 V 2.67 - - V

IO = −4.0 mA; VCC = 3.0 V 2.55 - - V

VOL LOW-level output voltage VI = VIH or VIL

IO = 20 μA; VCC = 0.8 V to 3.6 V - - 0.1 V

IO = 1.1 mA; VCC = 1.1 V - - 0.3 × VCC V

IO = 1.7 mA; VCC = 1.4 V - - 0.37 V

IO = 1.9 mA; VCC = 1.65 V - - 0.35 V

IO = 2.3 mA; VCC = 2.3 V - - 0.33 V

IO = 3.1 mA; VCC = 2.3 V - - 0.45 V

IO = 2.7 mA; VCC = 3.0 V - - 0.33 V

IO = 4.0 mA; VCC = 3.0 V - - 0.45 V

IIinput leakage current VI = GND to 3.6 V; VCC = 0 V to 3.6 V - - ±0.5 μA

IOFF power-off leakage current VI or VO = 0 V to 3.6 V; VCC = 0 V - - ±0.5 μA

ΔIOFF additional power-off

leakage current VI or VO = 0 V to 3.6 V;

VCC =0Vto0.2V --±0.6 μA

ICC supply current VI = GND or VCC; IO = 0 A;

VCC = 0.8 V to 3.6 V --0.9μA

ΔICC additional supply current VI = VCC − 0.6 V; IO = 0 A;

VCC =3.3V [1] --50μA

Table 7. Static characteristics …continued

At recommended operating conditions; voltages are referenced to GND (ground = 0 V).

Symbol Parameter Conditions Min Typ Max Unit

Product data sheet Rev. 6 — 22 June 2012 7 of 21

NXP Semiconductors 74AUP1G08

Low-power 2-input AND gate

[1] One input at VCC − 0.6 V, other input at VCC or GND.

Tamb = −40 °C to +125 °C

VIH HIGH-level input voltage VCC = 0.8 V 0.75 × VCC -- V

VCC = 0.9 V to 1.95 V 0.70 × VCC -- V

VCC = 2.3 V to 2.7 V 1.6 - - V

VCC = 3.0 V to 3.6 V 2.0 - - V

VIL LOW-level input voltage VCC = 0.8 V - - 0.25 × VCC V

VCC = 0.9 V to 1.95 V - - 0.30 × VCC V

VCC = 2.3 V to 2.7 V - - 0.7 V

VCC = 3.0 V to 3.6 V - - 0.9 V

VOH HIGH-level output voltage VI = VIH or VIL

IO = −20 μA; VCC = 0.8 V to 3.6 V VCC − 0.11 - - V

IO = −1.1 mA; VCC = 1.1 V 0.6 × VCC -- V

IO = −1.7 mA; VCC = 1.4 V 0.93 - - V

IO = −1.9 mA; VCC = 1.65 V 1.17 - - V

IO = −2.3 mA; VCC = 2.3 V 1.77 - - V

IO = −3.1 mA; VCC = 2.3 V 1.67 - - V

IO = −2.7 mA; VCC = 3.0 V 2.40 - - V

IO = −4.0 mA; VCC = 3.0 V 2.30 - - V

VOL LOW-level output voltage VI = VIH or VIL

IO = 20 μA; VCC = 0.8 V to 3.6 V - - 0.11 V

IO = 1.1 mA; VCC = 1.1 V - - 0.33 × VCC V

IO = 1.7 mA; VCC = 1.4 V - - 0.41 V

IO = 1.9 mA; VCC = 1.65 V - - 0.39 V

IO = 2.3 mA; VCC = 2.3 V - - 0.36 V

IO = 3.1 mA; VCC = 2.3 V - - 0.50 V

IO = 2.7 mA; VCC = 3.0 V - - 0.36 V

IO = 4.0 mA; VCC = 3.0 V - - 0.50 V

IIinput leakage current VI = GND to 3.6 V; VCC = 0 V to 3.6 V - - ±0.75 μA

IOFF power-off leakage current VI or VO = 0 V to 3.6 V; VCC = 0 V - - ±0.75 μA

ΔIOFF additional power-off

leakage current VI or VO = 0 V to 3.6 V;

VCC =0Vto0.2V --±0.75 μA

ICC supply current VI = GND or VCC; IO = 0 A;

VCC = 0.8 V to 3.6 V --1.4μA

ΔICC additional supply current VI = VCC − 0.6 V; IO = 0 A;

VCC =3.3V [1] --75μA

Table 7. Static characteristics …continued

At recommended operating conditions; voltages are referenced to GND (ground = 0 V).

Symbol Parameter Conditions Min Typ Max Unit

Product data sheet Rev. 6 — 22 June 2012 8 of 21

NXP Semiconductors 74AUP1G08

Low-power 2-input AND gate

11. Dynamic characteristics

Table 8. Dynamic characteristics

Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 9

Symbol Parameter Conditions Min Typ [1] Max Unit

Tamb = 25 °C; CL = 5 pF

tpd propagation delay A, B to Y; see Figure 8 [2]

VCC = 0.8 V - 17.0 - ns

VCC = 1.1 V to 1.3 V 2.6 5.1 10.8 ns

VCC = 1.4 V to 1.6 V 1.6 3.7 6.5 ns

VCC = 1.65 V to 1.95 V 1.3 3.0 5.2 ns

VCC = 2.3 V to 2.7 V 1.1 2.4 4.0 ns

VCC = 3.0 V to 3.6 V 1.0 2.2 3.5 ns

Tamb = 25 °C; CL = 10 pF

tpd propagation delay A, B to Y; see Figure 8 [2]

VCC = 0.8 V - 20.6 - ns

VCC = 1.1 V to 1.3 V 2.4 6.0 12.5 ns

VCC = 1.4 V to 1.6 V 2.0 4.3 7.6 ns

VCC = 1.65 V to 1.95 V 1.7 3.6 6.1 ns

VCC = 2.3 V to 2.7 V 1.4 2.9 4.8 ns

VCC = 3.0 V to 3.6 V 1.3 2.7 4.2 ns

Tamb = 25 °C; CL = 15 pF

tpd propagation delay A, B to Y; see Figure 8 [2]

VCC = 0.8 V - 24.1 - ns

VCC = 1.1 V to 1.3 V 3.4 6.8 14.2 ns

VCC = 1.4 V to 1.6 V 2.3 4.9 8.6 ns

VCC = 1.65 V to 1.95 V 1.9 4.0 6.9 ns

VCC = 2.3 V to 2.7 V 1.7 3.4 5.5 ns

VCC = 3.0 V to 3.6 V 1.5 3.1 4.8 ns

Tamb = 25 °C; CL = 30 pF

tpd propagation delay A, B to Y; see Figure 8 [2]

VCC = 0.8 V - 34.4 - ns

VCC = 1.1 V to 1.3 V 4.6 9.1 19.4 ns

VCC = 1.4 V to 1.6 V 3.4 6.4 11.5 ns

VCC = 1.65 V to 1.95 V 2.6 5.3 9.1 ns

VCC = 2.3 V to 2.7 V 2.3 4.5 7.2 ns

VCC = 3.0 V to 3.6 V 2.2 4.2 6.2 ns

Product data sheet Rev. 6 — 22 June 2012 9 of 21

NXP Semiconductors 74AUP1G08

Low-power 2-input AND gate

[1] All typical values are measured at nominal VCC.

[2] tpd is the same as tPLH and tPHL.

[3] CPD is used to determine the dynamic power dissipation (PD in μW).

PD=C

PD ×VCC2×fi×N+Σ(CL×VCC2×fo) where:

fi= input frequency in MHz;

fo= output frequency in MHz;

CL= output load capacitance in pF;

VCC = supply voltage in V;

N = number of inputs switching;

Σ(CL×VCC2×fo) = sum of the outputs.

Tamb = 25 °C

CPD power dissipation capacitance f = 1 MHz; VI= GND to VCC [3]

VCC = 0.8 V - 2.5 - pF

VCC = 1.1 V to 1.3 V - 2.7 - pF

VCC = 1.4 V to 1.6 V - 2.8 - pF

VCC = 1.65 V to 1.95 V - 2.9 - pF

VCC = 2.3 V to 2.7 V - 3.5 - pF

VCC = 3.0 V to 3.6 V - 4.0 - pF

Table 8. Dynamic characteristics …continued

Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 9

Symbol Parameter Conditions Min Typ [1] Max Unit

Table 9. Dynamic characteristics

Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 9

Symbol Parameter Conditions −40 °C to +85 °C−40 °C to +125 °CUnit

Min Max Min Max

CL = 5 pF

tpd propagation delay A, B to Y; see Figure 8 [1]

VCC = 1.1 V to 1.3 V 2.1 11.7 2.1 12.9 ns

VCC = 1.4 V to 1.6 V 1.5 7.5 1.5 8.3 ns

VCC = 1.65 V to 1.95 V 1.3 6.1 1.3 6.7 ns

VCC = 2.3 V to 2.7 V 1.0 4.8 1.0 5.3 ns

VCC = 3.0 V to 3.6 V 0.9 4.3 0.9 4.8 ns

CL = 10 pF

tpd propagation delay A, B to Y; see Figure 8 [1]

VCC = 1.1 V to 1.3 V 2.2 13.6 2.2 15.0 ns

VCC = 1.4 V to 1.6 V 1.8 8.9 1.8 9.8 ns

VCC = 1.65 V to 1.95 V 1.6 7.2 1.6 7.9 ns

VCC = 2.3 V to 2.7 V 1.3 5.7 1.3 6.3 ns

VCC = 3.0 V to 3.6 V 1.2 4.7 1.2 5.2 ns

Product data sheet Rev. 6 — 22 June 2012 10 of 21

NXP Semiconductors 74AUP1G08

Low-power 2-input AND gate

[1] tpd is the same as tPLH and tPHL.

12. Waveforms

CL = 15 pF

tpd propagation delay A, B to Y; see Figure 8 [1]

VCC = 1.1 V to 1.3 V 3.1 15.7 3.1 17.3 ns

VCC = 1.4 V to 1.6 V 2.1 10.1 2.1 11.2 ns

VCC = 1.65 V to 1.95 V 1.8 8.2 1.8 9.0 ns

VCC = 2.3 V to 2.7 V 1.6 6.5 1.6 7.2 ns

VCC = 3.0 V to 3.6 V 1.5 5.9 1.5 6.5 ns

CL = 30 pF

tpd propagation delay A, B to Y; see Figure 8 [1]

VCC = 1.1 V to 1.3 V 4.1 21.8 4.1 24.0 ns

VCC = 1.4 V to 1.6 V 2.9 13.6 2.9 15.0 ns

VCC = 1.65 V to 1.95 V 2.4 10.9 2.4 12.1 ns

VCC = 2.3 V to 2.7 V 2.2 8.6 2.2 9.5 ns

VCC = 3.0 V to 3.6 V 2.1 7.5 2.1 8.3 ns

Table 9. Dynamic characteristics …continued

Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 9

Symbol Parameter Conditions −40 °C to +85 °C−40 °C to +125 °CUnit

Min Max Min Max

Measurement points are given in Table 10.

Logic levels: VOL and VOH are typical output voltage drops that occur with the output load.

Fig 8. The data input (A or B) to output (Y) propagation delays

mna614

tPHL tPLH

A, B input

Y output

GND

VOH

VOL

Table 10. Measurement points

Supply voltage Output Input

VCC VMVMVItr = tf

0.8 V to 3.6 V 0.5 × VCC 0.5 × VCC VCC ≤ 3.0 ns

Product data sheet Rev. 6 — 22 June 2012 11 of 21

NXP Semiconductors 74AUP1G08

Low-power 2-input AND gate

[1] For measuring enable and disable times RL = 5 kΩ, for measuring propagation delays, setup and hold times and pulse width RL = 1 MΩ.

Test data is given in Table 11.

Definitions for test circuit:

RL = Load resistance.

CL = Load capacitance including jig and probe capacitance.

RT = Termination resistance should be equal to the output impedance Zo of the pulse generator.

VEXT = External voltage for measuring switching times.

Fig 9. Test circuit for measuring switching times

001aac521

DUT

VIVO

EXT

5 kΩ

Table 11. Test data

Supply voltage Load VEXT

VCC CLRL [1] tPLH, tPHL tPZH, tPHZ tPZL, tPLZ

0.8 V to 3.6 V 5 pF, 10 pF, 15 pF and 30 pF 5 kΩ or 1 MΩopen GND 2 × VCC

Product data sheet Rev. 6 — 22 June 2012 12 of 21

NXP Semiconductors 74AUP1G08

Low-power 2-input AND gate

13. Package outline

Fig 10. Package outline SOT353-1 (TSSOP5)

UNIT A1

max. A2A3bpLHELpwyv

ceD(1) E(1) Z(1) θ

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

mm 0.1

01.0

0.8 0.30

0.15 0.25

0.08 2.25

1.85 1.35

1.15 0.65

1.3 2.25

2.0 0.60

0.15 7°

0°

0.1 0.10.30.425

DIMENSIONS (mm are the original dimensions)

Note

1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

0.46

0.21

SOT353-1 MO-203 SC-88A 00-09-01

03-02-19

0.15

(A3)

detail X

vMA

1.5 3 mm0

scale

TSSOP5: plastic thin shrink small outline package; 5 leads; body width 1.25 mm SOT353-1

1.1

Product data sheet Rev. 6 — 22 June 2012 13 of 21

NXP Semiconductors 74AUP1G08

Low-power 2-input AND gate

Fig 11. Package outline SOT886 (XSON6)

References

Outline

version European

projection Issue date

IEC JEDEC JEITA

SOT886 MO-252

sot886_po

04-07-22

12-01-05

Unit

mm max

nom

min

0.5 0.04 1.50

1.45

1.40

1.05

1.00

0.95

0.35

0.30

0.27

0.40

0.35

0.32

0.6

A(1)

Dimensions (mm are the original dimensions)

Notes

1. Including plating thickness.

2. Can be visible in some manufacturing processes.

XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1.45 x 0.5 mm SOT886

A1b

0.25

0.20

0.17

DEee

0.5

terminal 1

index area

0 1 2 mm

scale

(2)

Product data sheet Rev. 6 — 22 June 2012 14 of 21

NXP Semiconductors 74AUP1G08

Low-power 2-input AND gate

Fig 12. Package outline SOT891 (XSON6)

terminal 1

index area

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

SOT891

05-04-06

07-05-15

XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1 x 0.5 mm

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT

mm 0.20

0.12 1.05

0.95 0.35

0.27

max b E

1.05

0.95

Dee

0.40

0.32

0.350.55

max

0.5 0.04

6×

(1)

4×

(1)

Note

1. Can be visible in some manufacturing processes.

Product data sheet Rev. 6 — 22 June 2012 15 of 21

NXP Semiconductors 74AUP1G08

Low-power 2-input AND gate

Fig 13. Package outline SOT1115 (XSON6)

References

Outline

version European

projection Issue date

IEC JEDEC JEITA

SOT1115

sot1115_po

10-04-02

10-04-07

Unit

mm max

nom

min

0.35 0.04 0.95

0.90

0.85

1.05

1.00

0.95 0.55 0.3 0.40

0.35

0.32

A(1)

Dimensions

Note

1. Including plating thickness.

2. Visible depending upon used manufacturing technology.

XSON6: extremely thin small outline package; no leads;

6 terminals; body 0.9 x 1.0 x 0.35 mm SOT1115

A1b

0.20

0.15

0.12

DEee

0.35

0.30

0.27

0 0.5 1 mm

scale

terminal 1

index area

(4×)(2)

e1e1

321

6 5 4

(6×)(2) A1A

Product data sheet Rev. 6 — 22 June 2012 16 of 21

NXP Semiconductors 74AUP1G08

Low-power 2-input AND gate

Fig 14. Package outline SOT1202 (XSON6)

References

Outline

version European

projection Issue date

IEC JEDEC JEITA

SOT1202

sot1202_po

10-04-02

10-04-06

Unit

mm max

nom

min

0.35 0.04 1.05

1.00

0.95

1.05

1.00

0.95 0.55 0.35 0.40

0.35

0.32

A(1)

Dimensions

Note

1. Including plating thickness.

2. Visible depending upon used manufacturing technology.

XSON6: extremely thin small outline package; no leads;

6 terminals; body 1.0 x 1.0 x 0.35 mm SOT1202

A1b

0.20

0.15

0.12

DEee

0.35

0.30

0.27

0 0.5 1 mm

scale

terminal 1

index area

(4×)(2)

e1e1

123

6 5 4

(6×)(2)

Product data sheet Rev. 6 — 22 June 2012 17 of 21

NXP Semiconductors 74AUP1G08

Low-power 2-input AND gate

Fig 15. Package outline SOT1226 (X2SON5)

References

Outline

version European

projection Issue date

IEC JEDEC EIAJ

SOT1226

sot1226_po

12-04-10

12-04-25

Unit

mm max

nom

min

0.35 0.85

0.80

0.75

0.04 0.30

0.25

0.20

0.85

0.80

0.75

0.27

0.22

0.17 0.05

A(1)

Dimensions

Note

1. Dimension A is including plating thickness.

2. Plastic or metal protrusions of 0.075 mm maximum per side are not included.

SOT1226

A1A3

0.128

0.040

hEbe

0.48

kLv

0.1

0.05 0.05

scale

01 mm

terminal 1

index area

detail X

A1A3

terminal 1

index area

eAC B

vCw

0.20

0.27

0.22

0.17

X2SON5: plastic thermal enhanced extremely thin small outline package; no leads;

5 terminals; body 0.8 x 0.8 x 0.35 mm

Product data sheet Rev. 6 — 22 June 2012 18 of 21

NXP Semiconductors 74AUP1G08

Low-power 2-input AND gate

14. Abbreviations

15. Revision history

Table 12. Abbreviations

Acronym Description

CDM Charged Device Model

DUT Device Under Test

ESD ElectroStatic Discharge

HBM Human Body Model

MM Machine Model

Table 13. Revision history

Document ID Release date Data sheet status Change notice Supersedes

74AUP1G08 v.6 20120622 Product data sheet - 74AUP1G04 v.5

Modifications: •Package outline drawing of SOT1226 (Figure 15) modified.

74AUP1G08 v.5 20120412 Product data sheet - 74AUP1G04 v.4

Modifications: •Added type number 74AUP1G08GX (SOT1226)

•Package outline drawing of SOT886 (Figure 11) modified.

74AUP1G08 v.4 20111115 Product data sheet - 74AUP1G08 v.3

Modifications: •Legal pages updated.

74AUP1G08 v.3 20101007 Product data sheet - 74AUP1G08 v.2

74AUP1G08 v.2 20060629 Product data sheet - 74AUP1G08 v.1

74AUP1G08 v.1 20050720 Product data sheet - -

Product data sheet Rev. 6 — 22 June 2012 19 of 21

NXP Semiconductors 74AUP1G08

Low-power 2-input AND gate

16. Legal information

16.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of de vice(s) descr ibed in th is docume nt may have cha nged since this docume nt was publis hed and ma y dif fer in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

16.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short dat a sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not be rel ied u pon to cont ain det ailed and

full information. For detailed and full information see the relevant full dat a

sheet, which is available on request via the local NXP Semiconductors sales

office. In case of any inconsistency or conf lict with the short data sheet, the

full data sheet shall pre vail.

Product specificat io n — The information and data provided in a Product

data sheet shall define the specification of the product as agr eed between

NXP Semiconductors and its customer, unless NXP Semiconductors and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the NXP Semiconductors product is

deemed to off er functions and qualities beyond those described in the

Product data sheet.

16.3 Disclaimers

Limited warr a nty and liability — Information in this document is believed to

be accurate and reliable. However, NXP Semiconductors does not give any

representations or warranties, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information. NXP Se miconductors takes no

responsibility for the content in this document if provided by an inf ormation

source outside of NXP Semiconductors.

In no event shall NXP Semiconductors be liable for any indirect, incidental ,

punitive, special or consequ ential damages (including - wit hout limitatio n - lost

profits, lost savings, business interruption, costs related to the removal or

replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason

whatsoever, NXP Semiconductors’ aggregat e and cumulative liabil ity towards

customer for the products described herein shall be limited in accordance

with the Terms and conditions of commercial sale of NXP Semiconductors.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all informa tion supplied prior

to the publication hereof .

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suitable for use in life support, life-critical or

safety-critical systems or equipment, nor in applications where failure or

malfunction of an NXP Semiconductors pro duct can reasonably be expected

to result in perso nal injury, death or severe property or environmental

damage. NXP Semiconductors and its suppliers accept no liability for

inclusion and/or use of NXP Semiconducto rs products in such equipment or

applications and ther efore such inclu sion and/or use is at the cu stomer’s own

risk.

Applications — Applications that are described herein for any of these

products are for il lustrative purposes only. NXP Semiconductors makes no

representation or warranty tha t such application s will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and ope ration of their applications

and products using NXP Semiconductors product s, and NXP Semiconductors

accepts no liability for any assistance with applications or customer product

design. It is customer’s sole responsibility to determine whether the NXP

Semiconductors product is suit able and fit for the custome r’s applications and

products planned, as well as fo r the planned application and use of

customer’s third party customer(s). Customers should provide appropriate

design and operating safeguards to minimize the risks associated with their

applications and products.

NXP Semiconductors does not accept any liabili ty related to any default,

damage, costs or problem which is based on any weakness or default in the

customer’s applications or products, or the application or use by customer’s

third party customer(s). Customer is responsible for doing all necessa ry

testing for th e customer’s applications and pro ducts using NXP

Semiconductors products in order to avoid a default of the applications and

the products or of the application or use by cust omer’s third party

customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanent ly and irreversibly affect

the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors

products are sold subject to the general terms and conditions of commercial

sale, as published at http://www.nxp.com/profile/terms, unless otherwise

agreed in a valid written individua l agreement. In case an individual

agreement is concluded only the ter ms and conditions of the respective

agreement shall apply. NXP Semiconductors hereby expressly objects to

applying the customer’s general terms and conditions with regard to the

purchase of NXP Semiconductors products by customer.

No offer to sell or license — Not hing in this document may be interpret ed or

construed as an of fer t o sell product s that is open for accept ance or t he grant,

conveyance or implication of any license under any copyri ghts, paten ts or

other industrial or intellectual property rights.

Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the objective specification for product development.

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.

Product [short] dat a sheet Production This document cont ains the product specification.

Product data sheet Rev. 6 — 22 June 2012 20 of 21

NXP Semiconductors 74AUP1G08

Low-power 2-input AND gate

Export control — This document as well as the item(s) described herein

may be subject to export control regulations. Export might require a prior

authorization from competent authorities.

Non-automotive qualified products — Unless this data sheet expressly

states that this specific NXP Semiconductors product is automotive qualified,

the product is not suitable for aut omo tive use. It i s neit her qua lif ied nor tested

in accordance with automotive testing or application requirements. NXP

Semiconductors accepts no liability for inclusion and/or use of

non-automotive qualified products in automotive equipment or applications.

In the event that customer uses the product for design-in and use in

automotive applications to automot ive specifications and standard s, customer

(a) shall use the product without NXP Semiconductors’ warranty of the

product for such automotive applications, use and specifications, and (b)

whenever cust omer uses the product for automotive applications beyond

NXP Semiconductors’ specifications such use shall be solely at customer’s

own risk, and (c) customer fully indemnifies NXP Semiconductors for any

liability, damages or failed product cl aims resulting from custome r design and

use of the product for automotive applications beyond NXP Semiconductors’

standard warranty and NXP Semiconductors’ product specif ications.

Translations — A non-English (translated) versio n of a document is for

reference only. The English version shall prevail in case of any discrepancy

between the translated and English versions.

16.4 Trademarks

Notice: All refe renced brands, produc t names, service names and trademarks

are the property of their respect i ve ow ners.

17. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

NXP Semiconductors 74AUP1G08

Low-power 2-input AND gate

For more information, please visit: http://www.nxp.co m

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 22 June 2012

Document identifier: 74AUP1G08

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

18. Contents

1 General description. . . . . . . . . . . . . . . . . . . . . . 1

2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2

6 Pinning information. . . . . . . . . . . . . . . . . . . . . . 3

6.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

6.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3

7 Functional description . . . . . . . . . . . . . . . . . . . 4

8 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4

9 Recommended operating conditions. . . . . . . . 4

10 Static characteristics. . . . . . . . . . . . . . . . . . . . . 5

11 Dynamic characteristics . . . . . . . . . . . . . . . . . . 8

12 Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

13 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 12

14 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 18

15 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 18

16 Legal information. . . . . . . . . . . . . . . . . . . . . . . 19

16.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 19

16.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

16.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 19

16.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 20

17 Contact information. . . . . . . . . . . . . . . . . . . . . 20

18 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21