BAR 63 ... W
Semiconductor Group Sep-07-19981
Silicon PIN Diode
• PIN diode for high speed
switching of RF signal
• Low forward resistance
• Very low capacitance
• For frequencies up to 3 GHz
1
3
VSO05561
2
BAR 63-04W BAR 63-05W BAR 63-06W
Marking Ordering Code Pin Configuration PackageType
3=C1/A2
3 = C1/2
3 = A1/2
SOT-3232 = C2
2 = A2
2 = C2
BAR 63-04W
BAR 63-05W
BAR 63-06W
Q62702-A1261
Q62702-A1267
Q62702-A1268
1 = A1
1 = A1
1 = C1
G4s
G5s
G6s
Maximum Ratings
UnitParameter Symbol Value
Diode reverse voltage
V
RV50
100 mA
I
F
Forward current
Total power dissipation,
T
S ≤ 105 °C
P
tot mW250
150Junction temperature
T
j
°C
T
op
Operating temperature range - 55 ...+150
Storage temperature
T
st
g
- 55 ...+150
Thermal Resistance
K/W
R
thJA ≤ 340
Junction - ambient 1)
Junction - soldering point
R
thJS ≤ 180
1) Package mounted on alumina 15mm x 16.7mm x 0.7mm
Semiconductor Group 1 1998-11-01
BAR 63 ... W
Semiconductor Group Sep-07-19982
Electrical Characteristics at
T
A = 25°C, unless otherwise specified. UnitParameter ValuesSymbol
min. max.typ.
DC characteristics
-50
V
(BR)
Breakdown voltage
I
(BR) = 5 µA V-
50Reverse current
V
R = 20 V
I
RµA--
1.2Forward voltage
I
F = 100 mA -
V
FmV0.95
AC characteristics
-
0.3
pF
0.3
0.21
C
T
-
-
Diode capacitance
V
R = 0 V,
f
= 100 MHz
V
R = 5 V,
f
= 1 MHz
2
-
Ω
1.2
1
Forward resistance
I
F = 5 mA,
f
= 100 MHz
I
F = 10 mA,
f
= 100 MHz
-
-
r
f
-Charge carrier life time
I
F = 10 mA,
I
R = 6 mA,
I
R = 3 mA τrr µs75-
-Series inductance -
L
snH1.4
Semiconductor Group 2 1998-11-01
BAR 63 ... W
Semiconductor Group Sep-07-19983
Forward current
I
F =
f
(
T
A*;
T
S)
* mounted on alumina
0 20 40 60 80 100 120 °C 150
T
A
,T
S
0
10
20
30
40
50
60
70
80
90
100
mA
120
I
F
T
S
0 20 40 60 80 100 120 °C 150
T
A
,T
S
0
10
20
30
40
50
60
70
80
90
100
mA
120
I
F
T
A
0 20 40 60 80 100 120 °C 150
T
A
,T
S
0
10
20
30
40
50
60
70
80
90
100
mA
120
I
F
Permissible Pulse Load
I
Fmax /
I
FDC =
f
(
t
p)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
t
p
0
10
1
10
2
10
3
10
-
I
Fmax /
I
FDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Permissible Pulse Load
R
thJS =
f
(
t
p)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
t
p
0
10
1
10
2
10
3
10
K/W
R
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Semiconductor Group 3 1998-11-01
BAR 63 ... W
Semiconductor Group Sep-07-19984
Diode capacitance
C
T =
f
(
V
R)
f
= 1MHz
V
EHD07139
R
T
C
00V
pF
0.1
0.2
0.3
0.4
0.5
10 20 30
Forward resistance
r
f =
f
(
I
F)
f
= 100MHz
Ι
EHD07138
F
f
r
Ω
10
-2
-1
10 mA
10
-1
10
0
10
1
10
2
10
2
10
0
10
1
Semiconductor Group 4 1998-11-01
