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3/5/10
IRF9317PbF
HEXFET® Power MOSFET
Notes through are on page 2
PD - 97465
Features and Benefits
Applications
• Charge and Discharge Switch for Notebook PC Battery Application
Features Resulting Benefits
SO-8
27
18
3
4
6
5
G
S
S
S
D
D
D
D
Absolute Maximum Ratings
Parameter Units
VDS Drain- to- Sou r c e V o l tag e
V
GS
Gate- to- S our c e V o ltage
I
D
@ TA = 25 °C Continuous Drai n Curre nt, VGS @ 10V
I
D
@ TA = 70 °C Continuous Drai n Curre nt, VGS @ 10V
I
DM
Pu ls ed D rain C ur rent
c
P
D
@TA = 25°C Power Dissipati on
f
P
D
@TA = 70°C Power Dissipati on
f
Li ne ar D erating Factor W/°C
T
J
Ope r ating J unc t ion and
T
STG
Storage Temperature Range -55 to + 15 0
2.5
0.02
1.6
Max.
-16
-13
-130
± 20
-30 V
A
W
°C
Note
Form Quantity
IRF9317PbF SO8 Tube/Bulk 95
IRF9317TRPbF SO8 Tape and Reel 4000
Orderable part number Package Type Standard Pack
Industry -S tandard SO8 Pack age Multi-Vendor Compatibility
RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier
VDS -30 V
RDS(on) max
(@VGS = -10V) 6.6 m
:
RDS(on) max
(@VGS = -4.5V) 10.2 m
:
Qg (typical) 31 nC
ID
(@TA = 25°C) -16 A
IRF9317PbF
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Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 4.3mH, RG = 25 Ω, IAS = -13A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board.
Rθ is measured at TJ of approximately 90°C.
For DESIGN AID ONLY, not subject to production testing.
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV
DSS
Drain- to- Sour c e Br ea kdo w n Voltage -30 ––– ––– V
ΔΒV
DSS
/ΔT
J
Br eakdow n Voltage Temp. Coefficient ––– 0.022 ––– V/° C
R
DS(on)
––– 5.4 6.6
––– 8.3 10.2
V
GS(th)
Gate Th r es hold Voltage -1.3 -1.8 -2.4 V
ΔV
GS(th)
Gat e Threshold Voltage Coefficient ––– -5. 7 ––– mV/°C
I
DSS
Drain- to- Sour c e L eak age C ur rent ––– ––– -1.0
––– ––– -150
I
GSS
Gate- to- Sou r c e For w a r d Le aka ge ––– ––– -1 00
Gat e-to-Source Reverse Leakage ––– ––– 100
gfs Forward Transconductance 36 ––– ––– S
Q
g
Total Gat e Charge
h
–––31–––nC
V
DS
= -15V , V
GS
= -4.5V, I
D
= - 13A
Q
g
Total Gat e Charge
h
––– 61 92
Q
gs
Gate- to- Sou r c e C h ar ge
h
––– 9 –––
Q
gd
Gate-to - Drain C har ge
h
–––14–––
R
G
Gat e Resistance
h
–––14–––Ω
t
d(on)
Turn-On Delay Time ––– 19 –––
t
r
Rise Time –––64–––
t
d(off)
Turn-Off Delay T ime ––– 160 –––
t
f
Fall Time ––– 120 –––
C
iss
In pu t C ap ac it a nce ––– 2820 –––
C
oss
Out put Capacitance ––– 640 –––
C
rss
Reverse Transfer Capacit ance ––– 370 –––
Avalanche Cha racter istics
Parameter Units
E
AS
Single Pulse Avalanche Energy
d
mJ
I
AR
Avalanche Current
c
A
Diode Charac teri stics
Parameter Min. Typ. Max. Units
I
S
Continuous Source C ur r ent
(Body Diode)
I
SM
Puls e d So urc e Curre nt
(Body Diode)
c
V
SD
Diode Fo rward Volt age ––– ––– -1.2 V
t
rr
Reverse Recovery Time ––– 33 50 ns
Q
rr
Reverse Recovery Charge ––– 30 45 nC
Thermal Resistance
Parameter Units
R
θJL
Junction-t o- Drain Lead
g
R
θJA
Junction-to-Ambient
f
Conditions
See Figs. 20a &20b
Max.
330
-13
ƒ = 1.0MHz
V
GS
= 0V
V
DS
= -15V
V
DS
= -24V , V
GS
= 0V
Conditions
V
GS
= 0V, I
D
= -250µA
Re ference to 25°C, I
D
= -1mA
V
GS
= -1 0V, I
D
= -16 A
e
V
DS
= V
GS
, I
D
= -50 µA
V
GS
= -4.5V, I
D
= -13A
e
mΩ
µA
T
J
= 25° C, I
F
= -2.5A, V
DD
= -24 V
di/dt = 100A/µs
e
T
J
= 25° C, I
S
= -2.5A, V
GS
= 0V
e
show i ng t he
integral reverse
p-n junction diode.
MO SFET symb ol
I
D
= -13A
R
G
= 6.8Ω
V
DS
= -10V , I
D
= -13A
V
DS
= -24V , V
GS
= 0V , T
J
= 125°C
V
DD
= -15V , V
GS
= -4.5V
e
I
D
= -1.0A
V
DS
= -15V
V
GS
= -2 0V
V
GS
= 20V
V
GS
= -1 0V
ns
pF
–––
Typ.
–––
St atic Dr ain- to- S our c e On - Res ist a nc e
A
––– –––
––– –––
-2.5
-130
nA
nC
°C/W
Max.
20
50
Typ.
–––
–––
G
D
S
IRF9317PbF
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Fig 4. Normalized On-Resistance vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
110 100
-VDS, Dr ain-to- Source Voltage (V )
100
1000
10000
100000
C, Capacitance(pF)
VGS = 0V , f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
-60 -40 -20 020 40 60 80 100120140160
TJ , Juncti on Temperature (°C )
0.6
0.8
1.0
1.2
1.4
1.6
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = -16A
VGS = -10V
0 20406080
QG Total Gat e Charge (nC)
0
2
4
6
8
10
12
14
-VGS, Gate-to-Source Voltage (V)
VDS= -24V
VDS= -15V
VDS= -6.0V
ID= -13A
0.1 110 100
-VDS, Drain-to- Source Voltage (V )
0.01
0.1
1
10
100
1000
-ID, Drain-to-Source Current (A)
VGS
TOP -10V
-4.5V
-3.5V
-3.1V
-2.9V
-2.7V
-2.5V
BOTTOM -2.3V
≤60µs PULSE WIDTH
Tj = 25° C
-2.3V
0.1 110 100
-VDS, Drain-to- Source Voltage (V )
0.1
1
10
100
1000
-ID, Drain-to-Source Current (A)
VGS
TOP -10V
-4.5V
-3.5V
-3.1V
-2.9V
-2.7V
-2.5V
BOTTOM -2.3V
≤60µs PULSE WIDT H
Tj = 150° C
-2.3V
1.0 2.0 3.0 4.0 5.0
-VGS, G ate-to- Source Voltage (V )
0.01
0.1
1
10
100
1000
-ID, Drain-to-Source Current (A)
VDS = -10V
≤ 60µs PULSE WIDT H
TJ = 25°C
TJ = 150°C
IRF9317PbF
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Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 8. Maximum Safe Operating Area
Fig 9. Maximum Drain Current vs.
Ambient Temperature
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 10. Threshold Voltage vs. Temperature
25 50 75 100 125 150
TA , Ambient T em perature (°C)
0
5
10
15
20
-ID, Drain Current (A)
-75 -50 -25 025 50 75 100 125 150
TJ , Temperature ( °C )
0.5
1.0
1.5
2.0
2.5
-VGS(th), Gate threshold Voltage (V)
ID = -50µA
1E-006 1E-005 0.0001 0.001 0.01 0.1 110 100 1000
t1 , Rectangular P ulse Durat ion (sec)
0.0001
0.001
0.01
0.1
1
10
100
Thermal Response ( Z
thJA ) °C/W
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Z thja + TA
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
-VSD, Source-to-Drain Voltage (V)
0.1
1
10
100
1000
-ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 150°C
VGS = 0V
0.1 1 10 100
-VDS, Dr ain-to-Source V oltage (V)
0.1
1
10
100
1000
-ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY RDS(on)
TA = 25°C
Tj = 150° C
Single Pulse
1msec
10msecDC
IRF9317PbF
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Fig 14. Maximum Avalanche Energy vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage Fig 13. Typical On-Resistance vs. Drain Current
Fig 16. Typical Power vs. Time
* Reverse Polarity of D.U.T for P-Channel
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
e-Applied
oltage
Reverse
Recovery
Current Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P.W.
Period
* VGS = 5V for Logic Level Devices
*
Inductor Current
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
• di/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
-
+
+
+
-
-
-
RGVDD
D.U.T *
Fig 17. Diode Reverse Recovery Test Circuit for P-Channel HEXFET® Power MOSFETs
2 4 6 8 10 12 14 16 18 20
-VGS, Gate -to -S ource Voltage (V)
4
6
8
10
12
14
16
18
RDS(on), Drain-to -Source On Resistance (m
Ω)
TJ = 125°C
TJ = 25°C
ID = -13A
1E-5 1E-4 1E-3 1E-2 1E-1 1E+0
Time (sec)
0
200
400
600
800
1000
Single Pulse Power (W)
25 50 75 100 125 150
Starti ng TJ , Junction Temperature (°C)
0
200
400
600
800
1000
1200
1400
EAS , Single Pulse Avalanche Energy (mJ)
ID
TOP -1.5A
-2.3A
BOTTOM-13A
010 20 30 40 50 60 70 80 90 100110120
-ID, Drain C urrent (A)
4
8
12
16
20
RDS(on), Drain-to -Source On Resistance (
mΩ)
VGS = -10V
VGS = -4.5V
IRF9317PbF
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Fig 18a. Gate Charge Test Circuit Fig 18b. Gate Charge Waveform
Fig 19b. Unclamped Inductive Waveforms
Fig 19a. Unclamped Inductive Test Circuit
Fig 20b. Switching Time Waveforms
Fig 20a. Switching Time Test Circuit
Vds
Vgs
I
d
Vgs(th)
Qgs1
Qgs2QgdQgodr
1K
VCC
DUT
0
L
S
D
G
20K
S
D
G
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
V
DS
V
DD
DRIVER
A
15V
-20V
-VGS
VDS
-VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
VDD
RG
D.U.T.
+
-
tpV
(BR)DSS
I
AS
V
DS
9
0%
1
0%
V
GS
t
d(on)
t
r
t
d(off)
t
f
IRF9317PbF
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Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
SO-8 Package Outline(Mosfet & Fetky)
e1
D
E
y
b
A
A1
H
K
L
.189
.1497
0°
.013
.05 0 BASIC
.0532
.0040
.2284
.0099
.016
.1968
.1574
8°
.020
.0688
.0098
.2440
.0196
.050
4.80
3.80
0.33
1.35
0.10
5.80
0.25
0.40
0°
1.2 7 BASIC
5.00
4.00
0.51
1.75
0.25
6.20
0.50
1.27
MIN MAX MILLIMETERSINCHES MIN MAX
DIM
8°
e
c .0075 .0098 0.19 0.25
.02 5 BASIC 0.635 BASIC
87
5
65
D B
E
A
e
6X
H
0.25 [ .010] A
6
7
K x 4 5°
8X L 8X c
y
0.25 [.01 0] C A B
e1 A
A1
8X b
C
0.10 [.00 4]
4312
FOOTPRINT
8X 0.72 [.028]
6.46 [.255]
3X 1.27 [.050]
8X 1.78 [.070]
4. OUTLINE CONFORMS TO JE DEC OUTLINE MS-012AA.
NOTES:
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. CONTROLLING DIMENSION: MILLIMETER
3 . DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES] .
5 DIM ENSION DOES NOT INCLUDE M OLD PROTRUSIO NS.
6 DIM ENSION DOES NOT INCLUDE M OLD PROTRUSIO NS.
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO
A SUBSTRATE.
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
Dimensions are shown in milimeters (inches)
SO-8 Part Marking Information
P = DISGNATES L EAD - FRE E
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
F7101
XXXX
INTERNATIONAL
LOGO
RECTIFIER
PART NUMBER
LOT CODE
PRODUCT (OPTIONAL)
DATE CODE (YWW)
Y = L AST DIGIT OF THE YEAR
WW = WEEK
A = AS S E MB LY S IT E CODE
IRF9317PbF
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Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
 Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
 Applicable version of JEDEC standard at the time of product release.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.3/2010
Data and specifications subject to change without notice.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
N
OTES:
1
. CONTROLLI NG DI M E NS I O N : MILL I M E TE R.
2
. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3
. OUTLINE CONFOR MS TO EI A - 481 & EI A -5 41.
SO-8 Tape and Reel (Dimensions are shown in milimeters (inches))
MSL1
(per JEDEC J-STD-020D
†††
)
RoHS Compliant
Qualification Information
†
Qualificat ion lev el Consumer
††
(per JEDEC JESD47F
†††
guidelines)
Yes
Mois ture S ens itivity Lev el SO-8