IRF9317PbF
2www.irf.com
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 4.3mH, RG = 25 Ω, IAS = -13A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board.
Rθ is measured at TJ of approximately 90°C.
For DESIGN AID ONLY, not subject to production testing.
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV
DSS
Drain- to- Sour c e Br ea kdo w n Voltage -30 ––– ––– V
ΔΒV
DSS
/ΔT
J
Br eakdow n Voltage Temp. Coefficient ––– 0.022 ––– V/° C
R
DS(on)
––– 5.4 6.6
––– 8.3 10.2
V
GS(th)
Gate Th r es hold Voltage -1.3 -1.8 -2.4 V
ΔV
GS(th)
Gat e Threshold Voltage Coefficient ––– -5. 7 ––– mV/°C
I
DSS
Drain- to- Sour c e L eak age C ur rent ––– ––– -1.0
––– ––– -150
I
GSS
Gate- to- Sou r c e For w a r d Le aka ge ––– ––– -1 00
Gat e-to-Source Reverse Leakage ––– ––– 100
gfs Forward Transconductance 36 ––– ––– S
Q
g
Total Gat e Charge
h
–––31–––nC
V
DS
= -15V , V
GS
= -4.5V, I
D
= - 13A
Q
g
Total Gat e Charge
h
––– 61 92
Q
gs
Gate- to- Sou r c e C h ar ge
h
––– 9 –––
Q
gd
Gate-to - Drain C har ge
h
–––14–––
R
G
Gat e Resistance
h
–––14–––Ω
t
d(on)
Turn-On Delay Time ––– 19 –––
t
r
Rise Time –––64–––
t
d(off)
Turn-Off Delay T ime ––– 160 –––
t
f
Fall Time ––– 120 –––
C
iss
In pu t C ap ac it a nce ––– 2820 –––
C
oss
Out put Capacitance ––– 640 –––
C
rss
Reverse Transfer Capacit ance ––– 370 –––
Avalanche Cha racter istics
Parameter Units
E
AS
Single Pulse Avalanche Energy
d
mJ
I
AR
Avalanche Current
c
A
Diode Charac teri stics
Parameter Min. Typ. Max. Units
I
S
Continuous Source C ur r ent
(Body Diode)
I
SM
Puls e d So urc e Curre nt
(Body Diode)
c
V
SD
Diode Fo rward Volt age ––– ––– -1.2 V
t
rr
Reverse Recovery Time ––– 33 50 ns
Q
Reverse Recovery Charge ––– 30 45 nC
Thermal Resistance
Parameter Units
R
θJL
Junction-t o- Drain Lead
g
R
θJA
Junction-to-Ambient
f
Conditions
See Figs. 20a &20b
Max.
330
-13
ƒ = 1.0MHz
V
GS
= 0V
V
DS
= -15V
V
DS
= -24V , V
GS
= 0V
Conditions
V
GS
= 0V, I
D
= -250µA
Re ference to 25°C, I
D
= -1mA
V
GS
= -1 0V, I
D
= -16 A
e
V
DS
= V
GS
, I
D
= -50 µA
V
GS
= -4.5V, I
D
= -13A
e
mΩ
µA
T
J
= 25° C, I
F
= -2.5A, V
DD
= -24 V
di/dt = 100A/µs
e
T
J
= 25° C, I
S
= -2.5A, V
GS
= 0V
e
show i ng t he
integral reverse
p-n junction diode.
MO SFET symb ol
I
D
= -13A
R
G
= 6.8Ω
V
DS
= -10V , I
D
= -13A
V
DS
= -24V , V
GS
= 0V , T
J
= 125°C
V
DD
= -15V , V
GS
= -4.5V
e
I
D
= -1.0A
V
DS
= -15V
V
GS
= -2 0V
V
GS
= 20V
V
GS
= -1 0V
ns
pF
–––
Typ.
–––
St atic Dr ain- to- S our c e On - Res ist a nc e
A
––– –––
––– –––
-2.5
-130
nA
nC
°C/W
Max.
20
50
Typ.
–––
–––
D
S