PD - 97465 IRF9317PbF HEXFET(R) Power MOSFET VDS -30 RDS(on) max RDS(on) max : 6.6 m 10.2 m (@VGS = -10V) (@VGS = -4.5V) V : Qg (typical) 31 nC ID -16 A (@TA = 25C) S 1 8 D S 2 7 D S 3 6 D G 4 5 D SO-8 Applications * Charge and Discharge Switch for Notebook PC Battery Application Features and Benefits Features Resulting Benefits Industry-Standard SO8 Package Multi-Vendor Compatibility RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier Orderable part number Package Type IRF9317PbF IRF9317TRPbF SO8 SO8 Standard Pack Form Quantity Tube/Bulk 95 Tape and Reel 4000 Note Absolute Maximum Ratings Parameter Max. VDS Drain-to-Source Voltage -30 VGS Gate-to-Source Voltage 20 ID @ TA = 25C Continuous Drain Current, VGS @ 10V -16 ID @ TA = 70C Continuous Drain Current, VGS @ 10V -13 IDM Pulsed Drain Current -130 PD @TA = 25C Power Dissipation PD @TA = 70C f Power Dissipation f c 2.5 1.6 Linear Derating Factor 0.02 TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range Units V A W W/C C Notes through are on page 2 www.irf.com 1 3/5/10 IRF9317PbF Static @ TJ = 25C (unless otherwise specified) Parameter BVDSS VDSS/TJ RDS(on) Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient VGS(th) VGS(th) IDSS Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current IGSS gfs Qg Qg Qgs Qgd RG td(on) tr td(off) tf Ciss Coss Crss Gate-to-Source Forward Leakage -30 --- --- --- -1.3 --- --- --- --- --- 0.022 5.4 8.3 -1.8 -5.7 --- --- --- Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time --- 36 --- --- --- --- --- --- --- --- --- --- --- 31 61 9 14 14 19 64 160 120 Input Capacitance Output Capacitance Reverse Transfer Capacitance --- --- --- 2820 640 370 Static Drain-to-Source On-Resistance h h h h h Conditions Min. Typ. Max. Units --- V VGS = 0V, ID = -250A --- V/C Reference to 25C, ID = -1mA VGS = -10V, ID = -16A 6.6 m VGS = -4.5V, ID = -13A 10.2 -2.4 V VDS = VGS, ID = -50A --- mV/C VDS = -24V, VGS = 0V -1.0 A VDS = -24V, VGS = 0V, TJ = 125C -150 VGS = -20V -100 nA VGS = 20V 100 --- S VDS = -10V, ID = -13A e e --- 92 --- --- --- --- --- --- --- --- --- --- nC nC VDS = -15V, VGS = -4.5V, ID = - 13A VGS = -10V VDS = -15V ID = -13A ns pF VDD = -15V, VGS = -4.5V ID = -1.0A RG = 6.8 e See Figs. 20a &20b VGS = 0V VDS = -15V = 1.0MHz Avalanche Characteristics Parameter EAS IAR Single Pulse Avalanche Energy Avalanche Current c d Typ. Max. Units --- --- 330 -13 mJ A Diode Characteristics Parameter Conditions Min. Typ. Max. Units IS Continuous Source Current ISM (Body Diode) Pulsed Source Current (Body Diode) --- --- -2.5 --- --- -130 MOSFET symbol A c showing the integral reverse p-n junction diode. D G S e VSD Diode Forward Voltage --- --- -1.2 V TJ = 25C, IS = -2.5A, VGS = 0V trr Reverse Recovery Time --- 33 50 ns TJ = 25C, IF = -2.5A, VDD = -24V Qrr Reverse Recovery Charge --- 30 45 nC di/dt = 100A/s e Thermal Resistance Parameter RJL RJA Junction-to-Drain Lead Junction-to-Ambient f g Typ. Max. Units --- --- 20 50 C/W Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 4.3mH, RG = 25, IAS = -13A. Pulse width 400s; duty cycle 2%. When mounted on 1 inch square copper board. R is measured at TJ of approximately 90C. For DESIGN AID ONLY, not subject to production testing. 2 www.irf.com IRF9317PbF 1000 1000 TOP 100 BOTTOM 10 VGS -10V -4.5V -3.5V -3.1V -2.9V -2.7V -2.5V -2.3V TOP -ID, Drain-to-Source Current (A) -ID, Drain-to-Source Current (A) 60s PULSE WIDTH Tj = 25C 1 0.1 100 BOTTOM 10 1 -2.3V 60s PULSE WIDTH Tj = 150C -2.3V 0.01 0.1 0.1 1 10 100 0.1 -VDS, Drain-to-Source Voltage (V) 10 100 Fig 2. Typical Output Characteristics 1000 1.6 RDS(on) , Drain-to-Source On Resistance (Normalized) -ID, Drain-to-Source Current (A) 1 -VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 TJ = 150C 10 TJ = 25C 1 0.1 VDS = -10V 60s PULSE WIDTH 0.01 1.0 2.0 3.0 4.0 5.0 ID = -16A VGS = -10V 1.4 1.2 1.0 0.8 0.6 -60 -40 -20 0 -VGS, Gate-to-Source Voltage (V) 100000 Fig 4. Normalized On-Resistance vs. Temperature 14 -VGS, Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd 10000 Ciss Coss 1000 20 40 60 80 100 120 140 160 TJ , Junction Temperature (C) Fig 3. Typical Transfer Characteristics C, Capacitance(pF) VGS -10V -4.5V -3.5V -3.1V -2.9V -2.7V -2.5V -2.3V Crss ID= -13A VDS= -24V VDS= -15V VDS= -6.0V 12 10 8 6 4 2 0 100 0 1 10 100 -VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs.Drain-to-Source Voltage www.irf.com 20 40 60 80 QG Total Gate Charge (nC) Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage 3 IRF9317PbF -ID, Drain-to-Source Current (A) 1000 100 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 TJ = 150C 10 TJ = 25C 1 1msec 10 DC 10msec 1 TA = 25C Tj = 150C Single Pulse VGS = 0V 0.1 0.1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.1 -VSD, Source-to-Drain Voltage (V) 10 100 Fig 8. Maximum Safe Operating Area 2.5 -VGS(th), Gate threshold Voltage (V) 20 -ID, Drain Current (A) 1 -VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 15 10 5 2.0 ID = -50A 1.5 1.0 0.5 0 25 50 75 100 125 -75 -50 -25 150 0 25 50 75 100 125 150 TJ , Temperature ( C ) TA , Ambient Temperature (C) Fig 10. Threshold Voltage vs. Temperature Fig 9. Maximum Drain Current vs. Ambient Temperature 100 Thermal Response ( ZthJA ) C/W -ISD , Reverse Drain Current (A) 1000 D = 0.50 0.20 0.10 0.05 0.02 0.01 10 1 0.1 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 0.0001 1E-006 1E-005 0.0001 0.001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + T A 0.01 0.1 1 10 100 1000 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 4 www.irf.com 18 ( ) RDS(on), Drain-to -Source On Resistance m RDS(on), Drain-to -Source On Resistance (m) IRF9317PbF ID = -13A 16 14 12 10 TJ = 125C 8 6 TJ = 25C 4 2 4 6 8 10 12 14 16 18 20 16 VGS = -4.5V 12 8 VGS = -10V 4 20 0 10 20 30 40 50 60 70 80 90 100110120 -ID, Drain Current (A) -VGS, Gate -to -Source Voltage (V) Fig 13. Typical On-Resistance vs. Drain Current 1000 1400 ID TOP -1.5A -2.3A BOTTOM -13A 1200 1000 800 Single Pulse Power (W) EAS , Single Pulse Avalanche Energy (mJ) Fig 12. On-Resistance vs. Gate Voltage 800 600 400 600 400 200 200 0 0 25 50 75 100 125 1E-5 150 1E-4 Fig 14. Maximum Avalanche Energy vs. Drain Current Driver Gate Drive + - D.U.T. ISD Waveform Reverse Recovery Current + di/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD + - Re-Applied Voltage Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Body Diode Reverse Polarity of D.U.T for P-Channel VDD Forward Drop Inductor Current Inductor Curent Ripple 5% * P.W. Period * * * * * 1E+0 VGS=10V Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - D= Period P.W. 1E-1 Fig 16. Typical Power vs. Time + RG 1E-2 Time (sec) Starting TJ , Junction Temperature (C) D.U.T * 1E-3 ISD * VGS = 5V for Logic Level Devices Fig 17. Diode Reverse Recovery Test Circuit for P-Channel HEXFET(R) Power MOSFETs www.irf.com 5 IRF9317PbF Id Vds Vgs L D D GG 0 20K 1K VCC DUT Vgs(th) SS Qgodr Fig 18a. Gate Charge Test Circuit I AS D.U.T RG IAS -V GS -20V tp Qgs2 Qgs1 Fig 18b. Gate Charge Waveform L VDS Qgd VDD A DRIVER 0.01 tp V(BR)DSS 15V Fig 19b. Unclamped Inductive Waveforms Fig 19a. Unclamped Inductive Test Circuit VDS RD td(on) VGS RG tr t d(off) tf VGS D.U.T. 10% + V DD -VGS Pulse Width 1 s Duty Factor 0.1 % Fig 20a. Switching Time Test Circuit 6 90% VDS Fig 20b. Switching Time Waveforms www.irf.com IRF9317PbF SO-8 Package Outline(Mosfet & Fetky) Dimensions are shown in milimeters (inches) D DIM B 5 A 8 7 6 6 H E 0.25 [.010] 1 2 3 A 4 MIN .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 BAS IC e1 6X e e1 C 1.27 BAS IC .025 BAS IC 0.635 BAS IC H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0 8 0 8 y 0.10 [.004] 0.25 [.010] MAX K x 45 A 8X b MILLIMETERS MAX A 5 INCHES MIN A1 8X L 8X c 7 C A B FOOT PRINT NOT ES : 8X 0.72 [.028] 1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE SHOWN IN MILLIMET ERS [INCHES]. 4. OUT LINE CONF ORMS T O JEDEC OUT LINE MS-012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS. MOLD PROT RUS IONS NOT T O EXCEED 0.15 [.006]. 6.46 [.255] 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS. MOLD PROT RUS IONS NOT T O EXCEED 0.25 [.010]. 7 DIMENS ION IS T HE LENGT H OF LEAD F OR S OLDERING T O A S UBS T RAT E. 3X 1.27 [.050] 8X 1.78 [.070] SO-8 Part Marking Information EXAMPLE: T HIS IS AN IRF7101 (MOS FET ) INT ERNAT IONAL RECT IFIER LOGO XXXX F7101 DAT E CODE (YWW) P = DIS GNAT ES LEAD - FREE PRODUCT (OPT IONAL) Y = LAS T DIGIT OF T HE YEAR WW = WEEK A = AS S EMBLY S IT E CODE LOT CODE PART NUMBER Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 7 IRF9317PbF SO-8 Tape and Reel (Dimensions are shown in milimeters (inches)) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Qualification Information Consumer Qualification level Moisture Sensitivity Level RoHS Compliant (per JEDEC JESD47F guidelines) MSL1 SO-8 (per JEDEC J-STD-020D) Yes Qualification standards can be found at International Rectifier's web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.3/2010 8 www.irf.com