©2002 Fairch ild Semicond uctor C orpo ration RHRD440CC, RHRD460CC, RHRD440CCS, RHRD460CCS Rev. B
RHRD440CC, RHRD460 CC, RHRD440CCS ,
RHRD460CCS
4A, 40 0V - 600V Hyperf as t D u al Diode s
The RHRD440CC, RHRD460CC, RHRD440CCS a nd
RHRD460CCS are h yperfast dual diodes with soft recov ery
characteristics (trr < 30ns). They have half the recovery time
of ultr afast diodes and are silicon nitri de pas si vated ion -
implan ted epitaxial plan ar cons tructi on.
These devices are intended for us e as freew heeling/
clampi ng diodes and rectifie rs in a v ariety of s witch ing pow er
supplies and other power switching applications. Their low
stored charge and hyperfast soft recovery minimize ringing
and electrical noise in many powe r switching circuits
reducing power loss in the switching transistors.
Formerly developmental type TA49055.
Symbol
Features
• Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . . <30ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . . .175oC
• Reverse Voltage Up To. . . . . . . . . . . . . . . . . . . . . . . .600V
• Avalanche Energy Rated
• Planar Construction
• Related Literature
- TB334 “Guideli nes for Solde ring Surfac e Moun t
Components to PC Boards”
Applications
• Switch ing Power Supplie s
• Power Switching Circuits
• General Purpose
Packaging JEDEC TO-251AA
JEDEC TO-252AA
Ordering Information
PART NUMBER PACKAGE BRAND
RHRD440CC TO-251AA HR440C
RHRD460CC TO-251AA HR460C
RHRD440CCS TO-252AA HR440C
RHRD460CCS TO-252AA HR460C
NOTE: When ordering, use the entire part numb er. Add the suffix 9A
to obta in the TO-252 variant in tape and reel, e.g. RHRD460CCS9A.
A1
K
A2
CATHODE
(FLANGE)
ANODE 1
CATHODE
ANODE 2
ANODE 1
ANODE 2 CATHODE
(FLANGE)
Absolute Maximum Ratings (Per Leg) TC = 25oC, Unless Otherwise Specified RHRD440CC,
RHRD440CCS RHRD460CC,
RHRD460CCS UNITS
Peak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM 400 600 V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM 400 600 V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR400 600 V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV)
TC = 155oC44A
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFRM
Square Wave, 20kHz 88A
Nonrepetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM
Halfwave, 1 Ph ase, 60Hz 40 40 A
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD50 50 W
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAVL 10 10 mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG,TJ-65 to 175 -65 to 175 oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Pack age Body for 10s, see Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 300
260 300
260
oC
oC
Data Sheet January 2002
©2002 Fairch ild Semicond uctor C orpo ration RHRD440CC, RHRD460CC, RHRD440CCS, RHRD460CCS Rev. B
Electrical Specifications (Per Leg) TC = 25oC, Unless Otherwise Specified
SYMBOL TEST CONDITION
RHRD440CC, RHRD440CCS RHRD460CC, RHRD460CCS
UNITSMIN TYP MAX MIN TYP MAX
VFIF = 4A - - 2.1 - - 2.1 V
IF = 4A, TC = 150oC--1.7--1.7V
IRVR = 400V - - 100 - - - µA
VR = 600V -----100µA
VR = 400V, TC = 150oC - - 500 - - - µA
VR = 600V, TC = 150oC -----500µA
trr IF = 1A, dIF/dt = 200A/µs--30--30ns
IF = 4A, dIF/dt = 200A/µs--35--35ns
taIF = 4A, dIF/dt = 200A/µs - 16 - - 16 - ns
tbIF = 4A, dIF/dt = 200A/µs-7--7-ns
QRR IF = 4A, dIF/dt = 200A/µs - 45 - - 45 - nC
CJVR = 10V, IF = 0A -15- -15- pf
RθJC --3--3
oC/W
DEFINITIONS
VF = Instantaneous forward voltage (pw = 300µs, D = 2%).
IR = Instantaneous reverse current.
trr = Reverse recovery time (See Figure 9), summation o f ta + tb.
ta = Time to reach peak reverse current (See Figure 9).
tb = Time from peak I RM to projected zero crossin g of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9).
QRR = Reverse recovery charge.
CJ = Junction Capacitance.
RθJC = Thermal resistance junction to case.
pw = Pulse width.
D = Duty cycle.
Typical Performance Curves Unless Otherwise Specified
FIGURE 1. FORWARD CURRENT vs FORWARD VO LTAGE FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
1
20
0.5
10
0 0.5 1 1.5 2 2.5
3
175oC100oC25oC
VF, FORWARD VOLTAGE (V)
IF, FORWARD CURRENT (A)
0 200 400 60
0
300 500
500
100
0.01
0.1
1
10
100
0.001
100oC
25oC
175oC
VR, REVERSE VOLTAGE (V)
IR, REVERSE CURRENT (µA)
RHRD440CC, RHRD460CC, RHRD440CCS, RHRD 460CCS
©2002 Fairch ild Semicond uctor C orpo ration RHRD440CC, RHRD460CC, RHRD440CCS, RHRD460CCS Rev. B
FIGURE 3. trr, ta AND tb CURVES vs FORWARD CURRENT FIGURE 4. trr, ta AND tb CURVES vs FORWARD CURRENT
FIGURE 5. trr, ta AND tb CURVES vs FORWARD CURRENT FI GURE 6. CURRENT DERATING CURVE
FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE
Typical Performance Curves Unless Otherwise Specified (Continued)
IF, FORWARD CURRENT (A)
0.5
0
15
10
5
25
4
1
20
t, RECOVERY T IMES (ns)
tb
ta
30
trr
TC = 25oC, dIF/dt = 200A/µs
0.5
0
30
50
4
1
t, RECOVERY TIMES (ns)
IF, FORWARD CURRENT (A)
tb
40
10
trr
ta
20
TC = 100oC, dIF/dt = 200A/µs
0.5
0
40
60
4
1
t, RECOVERY TIMES (ns)
IF, FORWARD CURRENT (A)
tb
50
20
trr
ta
30
10
TC = 175oC, dIF/dt = 200A/µs5
1
0
140 150 160 170 17
5
165
2
3
4
155
DC
SQ. WA VE
TC, CASE TEMPERATURE (oC)
IF(AV), AVERAGE FORWARD CURRENT (A)
145
VR, R E VE R S E VOLTAGE (V )
20
0
40
05010015020
0
30
10
CJ, JUNCTION CAPACITANCE (pF)
50
RHRD440CC, RHRD460CC, RHRD440CCS, RHRD 460CCS
©2002 Fairch ild Semicond uctor C orpo ration RHRD440CC, RHRD460CC, RHRD440CCS, RHRD460CCS Rev. B
Test Circuits and Waveforms
FIGURE 8. trr TEST CIRCUIT FIGURE 9. trr WAVEFORMS AND DEFINITIONS
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT FIGURE 11. A VALANCHE CURRENT AND V OL TA GE
WAVEFORMS
RG
L
VDD
IGBT
CURRENT
SENSE
DUT
VGE t1
t2
VGE AMPLITUDE AND
t1 AND t2 CONTROL IF
RG CONTROL dIF/dt
+
-
dt
dIF
IFtrr
tatb
0
IRM
0.25 IRM
DUT
CURRENT
SENSE +
LR
VDD
R < 0.1Ω
EAVL = 1/2LI2 [VR(AVL)/(VR(AVL) - VDD)]
Q1 = IGBT (BVCES > DUT VR(AVL))
-
VDD
Q1
IMAX = 1A
L = 20mH
IV
t0t1t2
IL
VAVL
t
IL
RHRD440CC, RHRD460CC, RHRD440CCS, RHRD 460CCS
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
Rev. H4
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET
STAR*POWER is used under license
VCX™
