V
RRM
= 50 V - 1000 V
I
F
=15 A
Features
• Types up to 1000 V V
RRM
• Ideal for printed circuit board
• Hi
g
h sur
g
e overload ratin
g
• Glass passivated chip junction
• High case dielectric strength 1500 V
RMS
Mechanical Data
Case: Molded plastic body over passivated junctions
Mounting position: Any
Silicon Bridge
Rectifier
• High temperature soldering guaranteed: 260⁰C/ 10
seconds, 0.375(9.5mm) lead length
GBU15A thru GBU15G
• Plastic package has Underwriters Laboratory
Flammabilit
y
Classification 94V-0
Terminals: Plated leads, solderable per MIL-STD-750
Method 2026 guaranteed
G
BU Packag
e
Parameter Symbol GBU15A GBU15B Unit
Repetitive peak reverse voltage V
RRM
50 100 V
RMS reverse voltage V
RMS
35 70 V
DC blocking voltage V
DC
50 100 V
Continuous forward current I
F
15 15 A
Operating temperature T
j
-55 to 150 -55 to 150 °C
Storage temperature T
stg
-55 to 150 -55 to 150 °C
Parameter Symbol GBU15A GBU15B Unit
Diode forward voltage 1.1 1.1
55
500 500
Thermal characteristics
Thermal resistance, junction -
case R
thJC
2.2 2.2 °C/W
-55 to 150 -55 to 150
Conditions
T
C
= 25 °C, t
p
= 8.3 ms
400
280
400200
Surge non-repetitive forward
current, Half Sine Wave I
F,SM
-55 to 150
GBU15G
55
GBU15D
2.2
V
R
= 50 V, T
j
= 125 °C
2.2
1.1 1.1
500
V
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
V
R
= 50 V, T
j
= 25 °C
I
F
= 15 A, T
j
= 25 °C
T
C
≤ 100 °C
Conditions
GBU15G
200
140
GBU15D
240 240
-55 to 150
Maximum ratings, at T
j
= 25 °C, unless otherwise specified
15 15
A240
Reverse current I
R
V
F
240
μA
500
www.genesicsemi.com 1
GBU15A thru GBU15G
www.genesicsemi.com 2
