■Absolute Maximum Ratings
■Electrical Characteristics
Parameter Symbol Ratings Unit Conditions
V
Conduction angle 360°, Tc=90°C
50Hz full-cycle sinewave, Peak value, Non-repetitive, Tj=125°C
50Hz Sine wave, RMS, Terminal to Case, 1 min.
400
TM1041S-L
600
TM1061S-L
A
A
V
A
W
W
°C
°C
Vrms
V
DRM
I
T(RMS)
I
TSM
V
GM
I
GM
P
GM
P
G(AV)
Tj
Tstg
V
ISO
10.0
100
10
2
5
0.5
–40 to
+
125
–40 to
+
125
1500
V
T
2
+
, G
+
T
2
+
, G
–
T
2
–
, G
–
T
2
–
, G
+
T
2
+
, G
+
T
2
+
, G
–
T
2
–
, G
–
T
2
–
, G
+
V
mA
V
mA
°C
/W
Parameter Symbol Ratings
typmin max
Unit Conditions
mA
I
DRM
V
TM
V
GT
I
GT
V
GD
I
H
Rth
0.7
0.8
0.9
10
13
15
30
15
0.8
2.0
30
30
30
3.3
0.2
1.6
2.0
2.0
0.1
0.3 2.0 V
D
=
V
DRM
, R
GK
=
∞
, Tj
=
125
°C
V
D
=
V
DRM
, R
GK
=
∞
, Tj
=
25
°C
Pulse test, I
TM
=
14A
V
D
=
6V, R
L
=
10Ω, T
C
=
25
°C
V
D
=
6V, R
L
=
10Ω, T
C
=
25
°C
Junction to case
V
D
=
6V
V
D
=
1/2×V
DRM
, Tj
=
125
°C
40
TM1041S-L, TM1061S-L
TO-220F 10A Triac
■Features
●Repetitive peak off-state voltage: VDRM=400, 600V
●RMS on-state current: IT(RMS)=10A
●Gate trigger current: IGT=30mA max (MODE , , )
●Isolation voltage: VISO=1500V(50Hz Sine wave, RMS)
●UL approved type available
16.9±0.3
8.4±0.2
0.8±0.2
3.9±0.2 4.0±0.2
10.0±0.2 4.2±0.2
1.35±0.15
1.35±0.15
2.4±0.2
2.2±0.2
φ3.3±0.2
0.85+0.2
–0.1
+0.2
–0.1
C 0.5
2.8
13.0 min
2.54
2.54 0.45
Weight: Approx. 2.1g
External Dimensions
(Unit: mm)
(1) (2) (3)
a
b
(1). Terminal 1 (T1)
(2). Terminal 2 (T2)
(3). Gate (G)
a. Part Number
b. Lot Number
Repetitive peak off-state voltage
RMS on-state current
Surge on-state current
Peak gate voltage
Peak gate current
Peak gate power loss
Average gate power loss
Junction temperature
Storage temperature
Isolation voltage
Off-state current
On-state voltage
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Holding current
Thermal resistance
(Tj=25°C, unless otherwise specified)
0
0
25
50
100
75
150
125
1.0 1.50.5 2.0 2.5 3.0
0.5
0.1
0.5
1
5
10
50
100
1.0 1.5 2.0 2.5 3.0 3.5
20
40
60
80
140
100
120
1 5 10 50 100
0
2
4
6
8
10
12
0123
0
0
1
2
3
20 40 8060
P
GM
=5W
0
0
2
4
12
10
8
6
14
2468 1210 0
0
25
50
100
75
150
125
2468 1210
0.5 1 10 10 10
0.2
0.5
1
5
30
10
23 0.5 1 10 10 10
0.2
0.5
1
5
30
10
23 0.5 1 10 10 10
0.2
0.5
1
5
30
10
23
0.5 1 10 10 10
0.5
1.0
1.5
2.0
23 0.5 1 10 10 10
0.5
1.0
1.5
2.0
23 0.5 1 10 10 10
0.5
1.0
1.5
2.0
23
–40 0 50 75 10025 125
2
10
5
100
50
0.1 1 10 10 10
0.1
1
100
10
23
104105
–40 0 75 10025 50 125
0
1.0
0.8
0.6
0.4
0.2
1.2
–40 0 50 75 10025 125
1
50
5
10
100
41
(VD=30V, RGK=∞)
TM1041S-L, TM1061S-L
On-state voltage vT (V)
On-state current iT (A)
v
T–iT Characteristics (max)
Tj=25°C
Tj=125°C
Number of cycle
Surge on-state current ITSM (A)
ITSM Ratings
1cycle
10 ms
ITSM
Tj=125°C
Initial junction temperature
Gate current iGF (A)
Gate voltage vGF (V)
Gate Characteristics
See graph at the upper right
Gate trigger current
IGT (mA)
Gate trigger voltage VGT (V)
Tj = –40°C
Tj=25°C
Tj = –20°C
RMS on-state current IT(RMS) (A)
IT(RMS) –P
T(AV) Characteristics
Average on-state power PT(AV) (W)
Full-cycle sinewave
Conduction angle :360°Full-cycle sinewave
Conduction angle :360°
RMS on-state current IT(RMS) (A)
IT(RMS) – Tc Ratings
Case temperature TC (°C)
IT(RMS) – Ta Ratings
RMS on-state current IT(RMS) (A)
Ambient temperature Ta (°C)
Full-cycle sinewave
Conduction angle : 360°
Self-supporting
Natural cooling
No wind
Junction temperature Tj (°C)
Holding current IH (mA)
IH temperature Characteristics
(Typical)
(T2+–T
1–)
(T
2––T
1+)
Pulse trigger temperature Characteristics igt (Typical)
(MODE –
) (MODE –
) (MODE –
)
(MODE –
) (MODE –
) (MODE –
)
Pulse trigger temperature Characteristics vgt (Typical)
Pulse width tw (µs)
vgt VGT DC gate trigger
voltage at 25°C
( )( )
Gate trigger voltage
at Tj and
t
w
Pulse width tw (µs)
vgt VGT DC gate trigger
voltage at 25°C
( )( )
Gate trigger voltage
at Tj and
t
w
Pulse width tw (µs)
vgt VGT DC gate trigger
voltage at 25°C
( )( )
Gate trigger voltage
at Tj and
t
w
Pulse width tw (µs)
igt IGT DC gate trigger
current at 25°C
( )( )
Gate trigger current
at Tj and
t
w
Pulse width tw (µs)
igt IGT DC gate trigger
current at 25°C
( )( )
Gate trigger current
at Tj and
t
w
Pulse width tw (µs)
igt IGT DC gate trigger
current at 25°C
( )( )
Gate trigger current
at Tj and
t
w
0°C
25°C
50°C
75°C
100°C
125°C
Tj= – 40°C
–20°C
0°C
25°C
50°C
75°C
100°C
125°C
Tj= – 40°C
–20°C
0°C
25°C
50°C
75°C
100°C
125°C
Tj= – 40°C
–20°C
0°C
25°C
50°C
75°C
100°C
125°C
Tj= – 40°C
–20°C
0°C
25°C
50°C
75°C
100°C
125°C
Tj= – 40°C
–20°C
0°C
25°C
50°C
75°C
100°C
125°C
Tj= – 40°C
–20°C
igt
tw
igt
tw
igt
tw
vgt
tw
vgt
tw
vgt
tw
Junction temperature Tj (°C)
Gate trigger voltage VGT (V)
VGT temperature characteristics
(Typical) (VD=6V, RL=10Ω)
MODE (T2
+,G+)
MODE (T2
+,G–)
MODE (T2
–,G–)
IGT temperature characteristics
(Typical)
Junction temperature Tj (°C)
Gate trigger current IGT (mA)
(VD=6V, RL=10Ω)
MODE (T2
+, G+)
MODE (T2
+, G–)
MODE (T2
–, G–)
t, Time (ms)
Transient thermal resistance rth (°C/W)
Transient thermal resistance
Characteristics
Junction to
operating
environment
Junction to
case
