SQM120P04-04L www.vishay.com Vishay Siliconix Automotive P-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY VDS (V) * Halogen-free According to IEC 61249-2-21 Definition - 40 RDS(on) () at VGS = - 10 V 0.0040 RDS(on) () at VGS = - 4.5 V 0.0060 ID (A) - 120 Configuration Single * TrenchFET(R) Power MOSFET * Package with Low Thermal Resistance * AEC-Q101 Qualifiedd * 100 % Rg and UIS Tested * Compliant to RoHS Directive 2002/95/EC S TO-263 G G D S Top View D P-Channel MOSFET ORDERING INFORMATION Package TO-263 Lead (Pb)-free and Halogen-free SQM120P04-04L-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS - 40 Gate-Source Voltage VGS 20 TC = 25 C Continuous Drain Currenta Continuous Source Current (Diode ID TC = 125 C Conduction)a Pulsed Drain Currentb Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationb L = 0.1 mH TC = 25 C Operating Junction and Storage Temperature Range V - 120 - 120 IS - 120 IDM - 330 IAS - 80 EAS 320 PD TC = 125 C UNIT 375 125 A mJ W TJ, Tstg - 55 to + 175 C SYMBOL LIMIT UNIT THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient PCB Mountc Junction-to-Case (Drain) RthJA 40 RthJC 0.40 C/W Notes a. Package limited. b. Pulse test; pulse width 300 s, duty cycle 2 %. c. When mounted on 1" square PCB (FR-4 material). d. Parametric verification ongoing. S11-2036-Rev. B, 17-Oct-11 1 Document Number: 67047 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQM120P04-04L www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage - 40 - - - 1.5 - 2.0 - 2.5 VDS = 0 V, VGS = 20 V - - 100 - - - 1.0 IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward VGS = 0, ID = - 250 A VDS = VGS, ID = - 250 A IGSS Zero Gate Voltage Drain Current Transconductanceb VDS VGS(th) RDS(on) gfs VGS = 0 V VDS = - 40 V VGS = 0 V VDS = - 40 V, TJ = 125 C - - - 50 VGS = 0 V VDS = - 40 V, TJ = 175 C - - - 250 VGS = - 10 V VDS- 5 V - 120 - - VGS = - 10 V ID = - 30 A - 0.0034 0.0040 VGS = - 10 V ID = - 30 A, TJ = 125 C - - 0.0059 VGS = - 10 V ID = - 30 A, TJ = 175 C - - 0.0070 VGS = - 4.5 V ID = - 20 A - 0.0050 0.0060 - 97 - - 11 183 13 980 - 1614 2020 - 1294 1620 - 220 330 - 34 - - 56 - 1.2 2.5 3.7 - 17 26 VDS = - 15 V, ID = - 30 A V nA A A S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Source-Drain Diode Ratings and VGS = 0 V VGS = - 10 V VDS = - 20 V, f = 1 MHz VDS = - 20 V, ID = - 110 A f = 1 MHz Rg td(on) tr td(off) VDD = - 20 V, RL = 0.18 ID - 110 A, VGEN = - 10 V, Rg = 1 tf pF nC - 15 23 - 112 168 - 45 68 - - - 330 A - - 0.95 - 1.5 V ns Characteristicsb Pulsed Currenta ISM Forward Voltage VSD IF = - 100 A, VGS = 0 Notes a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S11-2036-Rev. B, 17-Oct-11 2 Document Number: 67047 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQM120P04-04L www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 C, unless otherwise noted) 240 150 V GS = 10 V thru 5 V 120 ID - Drain Current (A) ID - Drain Current (A) 200 160 V GS = 4 V 120 80 90 60 T C = 25 C 30 40 T C = 125 C V GS = 3 V 0 0 3 6 9 12 15 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 200 0.015 160 0.012 RDS(on) - On-Resistance () g fs - Transconductance (S) T C = - 55 C 0 T C = - 55 C 120 T C = 25 C 80 T C = 125 C 40 5 0.009 V GS = 4.5 V 0.006 V GS = 10 V 0.003 0 0 0 16 32 48 64 80 0 20 40 60 80 100 ID - Drain Current (A) ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 15 000 10 ID = 110 A Ciss VGS - Gate-to-Source Voltage (V) C - Capacitance (pF) 12 500 10 000 7500 5000 Coss 2500 8 V DS = 20 V 6 4 2 Crss 0 0 0 5 10 15 20 25 30 35 40 0 VDS - Drain-to-Source Voltage (V) 50 75 100 125 150 175 200 225 Qg - Total Gate Charge (nC) Capacitance S11-2036-Rev. B, 17-Oct-11 25 Gate Charge 3 Document Number: 67047 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQM120P04-04L www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 C, unless otherwise noted) 2.0 100 1.7 10 V GS = 10 V IS - Source Current (A) RDS(on) - On-Resistance (Normalized) ID = 30 A 1.4 1.1 0.8 T J = 150 C 1 T J = 25 C 0.1 0.01 0.5 - 50 0.001 - 25 0 25 50 75 100 125 150 175 0 0.2 TJ - Junction Temperature (C) On-Resistance vs. Junction Temperature 0.6 0.8 1.0 1.2 Source Drain Diode Forward Voltage 0.05 1.2 0.9 0.04 ID = 250 A VGS(th) Variance (V) RDS(on) - On-Resistance () 0.4 VSD - Source-to-Drain Voltage (V) 0.03 0.02 0.01 T J = 150 C 0 2 4 6 ID = 5 mA 0.3 0 - 0.3 T J = 25 C 0 0.6 8 - 0.6 - 50 10 - 25 0 VGS - Gate-to-Source Voltage (V) 25 50 75 100 125 150 175 TJ - Temperature (C) On-Resistance vs. Gate-to-Source Voltage Threshold Voltage - 42 VDS - Drain-to-Source Voltage (V) ID = 10 mA - 44 - 46 - 48 - 50 - 52 - 54 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (C) Drain Source Breakdown vs. Junction Temperature S11-2036-Rev. B, 17-Oct-11 4 Document Number: 67047 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQM120P04-04L www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 C, unless otherwise noted) 1000 IDM Limited I D - Drain Current (A) 100 100 s Limited by RDS(on)* ID Limited 1 ms 10 ms 100 ms, 1 s, 10 s, DC 10 1 TC = 25 C Single Pulse 0.1 BVDSS Limited 0.01 0.01 * VGS 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which R DS(on) is specified Safe Operating Area Normalized Effective Transient Thermal Impedance 1 0.1 0.01 0.001 0.0001 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient S11-2036-Rev. B, 17-Oct-11 5 Document Number: 67047 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQM120P04-04L www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 1 10- 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Note * The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction to Ambient (25 C) - Normalized Transient Thermal Impedance Junction to Case (25 C) are given for general guidelines only to enable the user to get a "ball park" indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67047. S11-2036-Rev. B, 17-Oct-11 6 Document Number: 67047 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-263 (D2PAK): 3-LEAD -B- L2 6 E1 K D4 -A- c2 D2 D3 A E L3 L D D1 E3 A A b2 b e c Detail "A" E2 0.010 M A M 2 PL 0 L4 -5 INCHES L1 DETAIL A (ROTATED 90) c* c c1 c1 M b b1 SECTION A-A MIN. MAX. MIN. MAX. A 0.160 0.190 4.064 4.826 b 0.020 0.039 0.508 0.990 b1 0.020 0.035 0.508 0.889 1.397 b2 0.045 0.055 1.143 Thin lead 0.013 0.018 0.330 0.457 Thick lead 0.023 0.028 0.584 0.711 Thin lead 0.013 0.017 0.330 0.431 Thick lead 0.023 0.027 0.584 0.685 c2 0.045 0.055 1.143 1.397 D 0.340 0.380 8.636 9.652 D1 0.220 0.240 5.588 6.096 D2 0.038 0.042 0.965 1.067 D3 0.045 0.055 1.143 1.397 D4 0.044 0.052 1.118 1.321 E 0.380 0.410 9.652 10.414 E1 0.245 - 6.223 - E2 0.355 0.375 9.017 9.525 E3 0.072 0.078 1.829 1.981 e Notes 1. Plane B includes maximum features of heat sink tab and plastic. 2. No more than 25 % of L1 can fall above seating plane by max. 8 mils. 3. Pin-to-pin coplanarity max. 4 mils. 4. *: Thin lead is for SUB, SYB. Thick lead is for SUM, SYM, SQM. 5. Use inches as the primary measurement. 6. This feature is for thick lead. Revison: 30-Sep-13 MILLIMETERS DIM. 0.100 BSC 2.54 BSC K 0.045 0.055 1.143 1.397 L 0.575 0.625 14.605 15.875 L1 0.090 0.110 2.286 2.794 L2 0.040 0.055 1.016 1.397 L3 0.050 0.070 1.270 1.778 L4 M 0.010 BSC - 0.254 BSC 0.002 - 0.050 ECN: T13-0707-Rev. K, 30-Sep-13 DWG: 5843 1 Document Number: 71198 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 AN826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead 0.420 0.355 0.635 (16.129) (9.017) (10.668) 0.145 (3.683) 0.135 (3.429) 0.200 0.050 (5.080) (1.257) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Document Number: 73397 11-Apr-05 www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. (c) 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Vishay: SQM120P04-04L-GE3 SQM120P04-04L_GE3