
SQM120P04-04L
www.vishay.com Vishay Siliconix
S11-2036-Rev. B, 17-Oct-11 2Document Number: 67047
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0, ID = - 250 μA - 40 - - V
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 μA - 1.5 - 2.0 - 2.5
Gate-Source Leakage IGSS V
DS = 0 V, VGS = ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current IDSS
VGS = 0 V VDS = - 40 V - - - 1.0
μA VGS = 0 V VDS = - 40 V, TJ = 125 °C - - - 50
VGS = 0 V VDS = - 40 V, TJ = 175 °C - - - 250
On-State Drain Currenta I
D(on) V
GS = - 10 V VDS- 5 V - 120 - - A
Drain-Source On-State Resistancea R
DS(on)
VGS = - 10 V ID = - 30 A - 0.0034 0.0040
VGS = - 10 V ID = - 30 A, TJ = 125 °C - - 0.0059
VGS = - 10 V ID = - 30 A, TJ = 175 °C - - 0.0070
VGS = - 4.5 V ID = - 20 A - 0.0050 0.0060
Forward Transconductancebgfs VDS = - 15 V, ID = - 30 A - 97 - S
Dynamicb
Input Capacitance Ciss
VGS = 0 V VDS = - 20 V, f = 1 MHz
- 11 183 13 980
pF Output Capacitance Coss - 1614 2020
Reverse Transfer Capacitance Crss - 1294 1620
Total Gate ChargecQg
VGS = - 10 V VDS = - 20 V, ID = - 110 A
- 220 330
nC Gate-Source ChargecQgs -34-
Gate-Drain ChargecQgd -56-
Gate Resistance Rgf = 1 MHz 1.2 2.5 3.7
Turn-On Delay Timectd(on)
VDD = - 20 V, RL = 0.18
ID - 110 A, VGEN = - 10 V, Rg = 1
-1726
ns
Rise Timectr -1523
Turn-Off Delay Timectd(off) - 112 168
Fall Timectf -4568
Source-Drain Diode Ratings and Characteristicsb
Pulsed CurrentaISM - - - 330 A
Forward Voltage VSD IF = - 100 A, VGS = 0 - - 0.95 - 1.5 V