SIEMENS BCR 135 NPN Silicon Digital Transistor * Switching circuit, inverter, interface circuit, driver circuit * Built in bias resistor (Ry=2.2kQ, Ro=47kQ) VPSO5161 neers Type Marking |Ordering Code | Pin Configuration Package BCR 135 WJs Q62702-C2257 |1=B l2 =E 3=C SOT-23 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VcEO 50 Vv Collector-base voltage Voso 50 Emitter-base voltage VeBo 6 Input on Voltage Vicon) 20 DC collector current Ie 100 mA Total power dissipation, Ts = 102C Prot 200 mW Junction temperature Tj 150 C Storage temperature Tstg - 65 ...+ 150 Thermal Resistance Junction ambient ?) AinJa < 350 KW Junction - soldering point Anas < 240 1) Package mounted on pcb 40mm x 40mm x 1.5m / 6em? Cu Semiconductor Group 623 11.96SIEMENS BCR 135 Electrical Characteristics at 7,=25C, unless otherwise specified Parameter Symbol Values Unit min. |typ. |max. DC Characteristics Collector-emitter breakdown voltage Vier)cEO Vv lo = 100 PA, ip =0 50 - - Collector-base breakdown voltage ViprycBo Io = 10 PA, Ip =0 50 - - Collector cutoff current IcBo nA Vop = 40 V, fe =0 - - 100 Emitter cutoff current leBo yA Veg = 6 V, Ig =0 - - 167 DC current gain Nee - Ig = 5 MA, Voge =5V 70 - - Collector-emitter saturation voltage 1) VoEsat Vv lo =10 mA, Ip=0.5 MA - - 0.3 input off voltage Vicoth) Ig = 100 pA, Vog =5V 0.5 - 1 Input on Voltage Vicon) Ic =2mMA, Voge = 0.3 V 0.5 - 1.4 Input resistor Ay 7 10 13 kQ Resistor ratio Fiy/Ro 0.19 0.21 0.24 - AC Characteristics Transition frequency fr MHz Ig = 10 MA, Vog = 5 V, f= 100 MHz - 150 - Collector-base capacitance Cop pF Vop = 10 V, f= 1 MHz - 3 - 1) Pulse test: t < 300ps; D < 2% Semiconductor Group 624 11.96SIEMENS ~ BCR 135 DC Current Gain hee = f (Ic) Collector-Emitter Saturation Voltage Voce = 5V (common emitter configuration) Voesat = Alc), re = 20 103 102 | 102 101 10! 10 ol. 10 10 10 10 mA 0.0 0.2 0.4 0.6 Vv 1.0 & > Voces Input on Voltage Vion) = Aic) input off voltage Vio) = f/c) Vee = 0.3V (common emitter configuration) Voe = 5V (common emitter configuration) 10? 10 10 1L. Mer Semiconductor Group 625 41.96SIEMENS BCR 135 Total power dissipation P,,; = f(Ta*; Ts) * Package mounted on epoxy mw | 200 \ r 150 iN i \ | i L 9 20 400 6600 80s 100s 120 C 150 me Tye Permissible Pulse Load Ainus = Kt) Permissible Pulse Load Protmax / Protoc = At) - ANT se eh tn anime TT | Cit ree 107 s 10 Semiconductor Group 626 11.96