BUZ 110 S SPP80N05 SIPMOS (R) Power Transistor * N channel * Enhancement mode * Avalanche-rated * dv /dt rated * 175C operating temperature * also in SMD available Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS(on) Package Ordering Code BUZ 110 S 55 V 80 A 0.012 TO-220 AB Q67040-S4005-A2 Maximum Ratings Parameter Symbol Continuous drain current ID Values A TC = 25 C 80 TC = 100 C 66 Pulsed drain current Unit IDpuls 320 TC = 25 C Avalanche energy, single pulse mJ E AS ID = 80 A, V DD = 25 V, RGS = 25 L = 144 H, Tj = 25 C 460 Avalanche current,limited by Tjmax IAR 80 A Avalanche energy,periodic limited by Tjmax E AR 20 mJ Reverse diode dv/dt dv/dt kV/s IS = 80 A, VDS = 40 V, diF/dt = 200 A/s Tjmax = 175 C 6 Gate source voltage V GS Power dissipation P tot TC = 25 C Semiconductor Group 20 V W 200 1 28/Jan/1998 BUZ 110 S SPP80N05 Maximum Ratings Parameter Symbol Operating temperature Tj -55 ... + 175 Storage temperature Tstg -55 ... + 175 Thermal resistance, junction - case RthJC 0.75 Thermal resistance, junction - ambient RthJA 62 Values IEC climatic category, DIN IEC 68-1 Unit C K/W 55 / 175 / 56 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V GS = 0 V, ID = 0.25 mA, Tj = 25 C Gate threshold voltage 55 - - 2.1 3 4 V GS(th) V GS=V DS, ID = 200 A Zero gate voltage drain current V V (BR)DSS A IDSS V DS = 50 V, V GS = 0 V, Tj = -40 C - - 0.1 V DS = 50 V, V GS = 0 V, Tj = 25 C - 0.1 1 V DS = 50 V, V GS = 0 V, Tj = 150 C - - 100 Gate-source leakage current V GS = 20 V, VDS = 0 V Drain-Source on-resistance - 10 100 RDS(on) V GS = 10 V, ID = 66 A Semiconductor Group nA IGSS - 2 0.009 0.012 28/Jan/1998 BUZ 110 S SPP80N05 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance V DS 2 * ID * RDS(on)max, ID = 66 A Input capacitance 30 pF - 2420 3025 - 745 930 - 380 475 Crss V GS = 0 V, V DS = 25 V, f = 1 MHz Turn-on delay time - Coss V GS = 0 V, V DS = 25 V, f = 1 MHz Reverse transfer capacitance - Ciss V GS = 0 V, V DS = 25 V, f = 1 MHz Output capacitance S gfs ns td(on) V DD = 30 V, VGS = 10 V, ID = 80 A RG = 3.9 Rise time - 20 30 - 35 55 - 45 70 - 30 45 tr V DD = 30 V, VGS = 10 V, ID = 80 A RG = 3.9 Turn-off delay time td(off) V DD = 30 V, VGS = 10 V, ID = 80 A RG = 3.9 Fall time tf V DD = 30 V, VGS = 10 V, ID = 80 A RG = 3.9 Gate charge at threshold V DD = 40 V, ID 0.1 A, V GS =0 to 1 V Gate charge at 7.0 V 4.5 - 65 100 - 85 130 V V (plateau) V DD = 40 V, ID = 80 A Semiconductor Group 3 Qg(total) V DD = 40 V, ID = 80 A, VGS =0 to 10 V Gate plateau voltage Qg(7) V DD = 40 V, ID = 80 A, VGS =0 to 7 V Gate charge total nC Qg(th) 3 5.8 28/Jan/1998 BUZ 110 S SPP80N05 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current TC = 25 C Inverse diode direct current,pulsed - - 320 V 1.28 2 ns trr - 80 120 C Qrr - V R = 30 V, IF=lS, diF/dt = 100 A/s Semiconductor Group 80 - V R = 30 V, IF=lS, diF/dt = 100 A/s Reverse recovery charge - V SD V GS = 0 V, IF = 160 A Reverse recovery time ISM TC = 25 C Inverse diode forward voltage A IS 4 17 25 28/Jan/1998 BUZ 110 S SPP80N05 Power dissipation Ptot = (TC) Ptot Drain current ID = (TC) parameter: VGS 10 V 220 90 W A 180 ID 70 160 60 140 120 50 100 40 80 30 60 20 40 10 20 0 0 0 20 40 60 80 100 120 140 C 180 0 20 40 60 80 100 120 140 TC Safe operating area ID = (VDS) parameter: D = 0, TC = 25C 180 Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 0 10 3 D DS ZthJC 10 -1 R DS (o n) = V ID K/W t = 8.7s p 10 s /I A 10 2 C TC 100 s 10 -2 D = 0.50 0.20 10 1 0.10 1 ms 0.05 10 -3 10 ms 0.02 DC 0.01 single pulse 10 0 0 10 10 1 V 10 10 -4 -7 10 2 VDS Semiconductor Group 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 5 28/Jan/1998 BUZ 110 S SPP80N05 Typ. output characteristics ID = (VDS) parameter: tp = 80 s 180 Typ. drain-source on-resistance RDS (on) = (ID) parameter: tp = 80 s, Tj = 25 C 0.038 Ptot = 200W l k j i a b c d e f A ID a 4.0 0.032 RDS (on) b 4.5 0.028 c 5.0 d 5.5 e 6.0 f f 6.5 g 7.0 V [V] h GS 140 g 120 100 80 e 60 d h 7.5 i 8.0 j 9.0 k 10.0 l 20.0 0.024 0.020 0.016 g 0.012 h i 40 0.008 j c 20 0.004 b 0 VGS [V] = a 4.0 4.5 5.0 b 5.5 c 6.0 d 6.5 e f 7.0 7.5 g 8.0 h i j 9.0 10.0 20.0 0.000 a 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0 VDS 0 20 40 60 80 100 120 140 A 170 ID Typ. transfer characteristics ID = f (V GS) parameter: tp = 80 s VDS2 x ID x RDS(on)max 70 A I D 50 40 30 20 10 0 0 1 2 3 4 5 6 7 8 V 10 VGS Semiconductor Group 6 28/Jan/1998 BUZ 110 S SPP80N05 Gate threshold voltage Drain-source on-resistance RDS (on) = (Tj ) parameter: ID = 66 A, VGS = 10 V V GS(th)= f (Tj) parameter:VGS=VDS, ID =200A 0.038 5.0 V 4.4 0.032 RDS (on) VGS(th) 4.0 0.028 3.6 0.024 3.2 2.8 0.020 2.4 98% 0.016 max 2.0 typ 0.012 1.6 typ 1.2 0.008 0.8 0.004 0.000 -60 min 0.4 0.0 -20 20 60 100 C 180 -60 -20 20 60 100 140 V 200 Tj Tj Typ. capacitances Forward characteristics of reverse diode IF = (VSD) parameter: Tj , tp = 80 s C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 4 10 3 A C IF pF Ciss 10 2 10 3 Coss 10 1 Tj = 25 C typ Tj = 175 C typ Crss Tj = 25 C (98%) Tj = 175 C (98%) 10 2 0 5 10 15 20 25 30 V 40 VDS Semiconductor Group 10 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD 7 28/Jan/1998 BUZ 110 S SPP80N05 Avalanche energy EAS = f (Tj) Typ. gate charge VGS = (QGate) parameter: ID puls = 80 A parameter:ID=80 A,VDD =25 V RGS =3.8 , L = 144 H 500 16 mJ EAS V 400 VGS 12 350 10 300 0,2 VDS max 250 0,8 VDS max 8 200 6 150 4 100 2 50 0 20 0 40 60 80 100 120 140 C 180 Tj 0 20 40 60 80 100 nC 130 Q Gate Drain-source breakdown voltage V(BR)DSS = (Tj) 65 V V(BR)DSS 61 59 57 55 53 51 49 -60 -20 20 60 100 C 180 Tj Semiconductor Group 8 28/Jan/1998