TRFO40 eat | D84EN2,M 18 AMPERES D O ) Re MOS FET FIELD EFFECT POWER TRANSISTOR 200, 150 VOLTS RDS(ON) = 0.18 0 This series of N-Channel Enhancement-mode Power MOSFETs utilizes GEs advanced Power DMOS technology N-CHANNEL 5 to achieve low on-resistance with excellent device rugged- ness and reliability. This design has been optimized to give superior performance 6 C in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. on CASE STYLE TO-220AB Also, the extended safe operating area with good linear 4oatioz6) 1181298) sans transfer characteristics makes it well suited for many linear i areas of 32) of be Sata applications such as audio amplifiers and servo motors. pe 2 ls 5 . 2) Features / | ' - TEMPERATURE one _ one . ape Fa POINT Polysilicon gate Improved stability and reliability 1458 68/19, j $5519.02) ben No secondary breakdown Excellent ruggedness , ' x aaths . . + -130(3.3; i 50710. 026) Ultra-fast switching Independent of temperature A I FF . TERM.1 500(12.7)MIN. Voltage controlled High transconductance TERM.2 955129 Low input capacitance Reduced drive requirement TERMS | | ili | ne e Excellent thermal stability Ease of paralleling nt S sean) m a UNIT TYPE |TERM.1[TERM.2| TERM.3 TAB POWER MOS FET |T.0-220-A8| GATE | DRAIN] SOURCE ORAIN maximum ratings (Tc = 25C) (unless otherwise specified) RATING SYMBOL IRF640/D84EN2 IRF641/D84EM2 UNITS Drain-Source Voltage Voss 200 150 Volts Drain-Gate Voltage, Ras = 1M0 VpGR 200 150 Volts Continuous Drain Current @ To = 25C Ip 18 18 A @ Tc = 100C 1 1 A Pulsed Drain Current IDM 72 72 A Gate-Source Voltage Vas +20 +20 Volts Total Power Dissipation @ Tc = 25C Pp 125 125 Watts Derate Above 25C 1.0 1.0 wc Operating and Storage Junction Temperature Range Ty, TstG -55 to 150 -55 to 150 C thermal characteristics Thermal Resistance, Junction to Case Rec 1.00 1.00 C/W Thermal Resistance, Junction to Ambient Rea 80 80 C/W Maximum Lead Temperature for Soldering Purposes: %" from Case for 5 Seconds Th 260 260 c (1) Repetitive Rating: Pulse width limited by max. junction temperature. 201electrical characteristics (Tc = 25C) (unless otherwise specified) | CHARACTERISTIC | SYMBOL | MIN | TYP | MAX UNIT | off characteristics | Drain-Source Breakdown Voltage IRF640/D84EN2 BVpss 200 _ _ Volts (Vas = OV, Ip = 250 WA) IRF641/D84EM2 150 Zero Gate Voltage Drain Current Ipss (Vpg = Max Rating, Vgg = OV, To = 25C) 250 LA (Vpg = Max Rating, 0.8, Vgg = OV, To = 125C) 1000 Gate-Source Leakage Current on characteristics Gate Threshold Voltage To = 25C | VasctH) 2.0 4.0 . Volts (Vps = Vas; Ip = 250 uA) On-State Drain Current | 18 _ _ A (Vas = 10V, Vps = 10V) D(ON) Static Drain-Source On-State Resistance _ (Vag = 10V, Ip = 10A) Rps(on) 0.14 0.18 Ohms Forward Transconductance (Vpg = 10V, Ip = 10A) Ofs 4.8 6.0 _ mhos dynamic characteristics Input Capacitance Ves = 0V Ciss _ 1400 1600 pF Output Capacitance Vos = 25V Coss _ 310 750 pF Reverse Transfer Capacitance f=1 MHz Crss - 65 300 pF switching characteristics Turn-on Delay Time Vos = 90V ta(on) _ 20 _ ns Rise Time Ip = 10A, Veg = 15V tr _ 40 _ ns Turn-off Delay Time Raen = 509, Regs = 12.59 ta(off) _ 60 _ ns Fall Time (Ras (EQuiv.) = 100) tt _ 30 _ ns source-drain diode ratings and characteristics" Continuous Source Current Is _ _ 18 A Pulsed Source Current Isu _ 72 A Diode Forward Voltage _ i (To = 25C, Vag = OV, Ig = 18) Vsb 1.0 2.0 Volts Reverse Recovery Time ter _ 330 ns (Ig = 18A, dlg/dt = 100A/usec, To = 125C) Qrr 3.5 _ uc *Pulse Test: Pulse width <= 300 us, duty cycle = 2% 1000 800 600 400 200 80 60 40 20 RATION IN AREA Y BE LIMITED BY R Ip, DRAIN CURRENT (AMPERES) bh Owo | I SINGLE PULSE To = 25C n 1 2 4 6 810 20 40 60 80100 Vs. ORAIN-SOURCE VOLTAGE (VOLTS) MAXIMUM SAFE OPERATING AREA 200 400 600 1000 202 Rosion) AND Vescryy NORMALIZED CONDITIONS: Rpg(on) CONDITIONS: Ip = 10 A. Vgg = 10V V@g(TH) CONDITIONS: Ip = 250uA, Vig = Vgg Rosiony Vasiru) 40 0 40 80 Ty, JUNCTION TEMPERATURE (C) 120 160 TYPICAL NORMALIZED Rpgion, AND Vagizy VS- TEMP.