FMBM5551 NPN General Purpose Amplifier * This device has matched dies * Sourced from process 16. * See MMBT5551 for characteristics C2 E1 C1 B2 E2 pin #1 B1 SuperSOTTM-6 Mark: .3S2 Dot denotes pin #1 Absolute Maximum Ratings * Symbol Parameter Value Units V CEO Collector-Emitter Voltage 160 V V CBO Collector-Base Voltage 180 V V EBO Emitter-Base Voltage 6 V IC Collector Current (DC) 600 mA PC Collector Dissipation (TC = 25C) 0.7 W TJ Junction Temperature 150 C TSTG Storage Temperature Range TqJA Thermal Resistance, Junction to Ambient -55 ~ 150 C 180 C/W * Pd total, for both transistors. For each transistor, Pd = 350mW Electrical Characteristics Symbol TC = 25C unless otherwise noted Parameter Conditions Min. Max Units Off Characteristics BV CEO Collector-Emitter Voltage IC = 1mA, IB = 0 160 V BV CBO Collector-Base Voltage IC = 100mA, IE = 0 180 V BV EBO Emitter-Base Voltage IC = 10mA, IC = 0 6 ICBO Collector Cut-off Current VCB = 120V VCB = 120V, Ta = 100C 50 50 nA mA IEBO Emitter Cut-off Current VEB = 4V 50 nA V On Characteristics hFE1 DC Current Gain VCE = 5V, IC = 1mA 80 DIVID1 Variation Ratio of hFE1 Between Die 1 and Die 2 hFE1(Die1)/hFE1(Die2) 0.9 1.1 hFE2 DC Current Gain VCE = 5V, IC = 10mA 80 250 DIVID2 Variation Ratio of hFE2 Between Die 1 and Die 2 hFE2(Die1)/hFE2(Die2) 0.95 1.05 (c) 2007 Fairchild Semiconductor Corporation FMBM5551 Rev. 1.0.0 www.fairchildsemi.com 1 FMBM5551 -- NPN General Purpose Amplifier September 2008 Symbol hFE3 TC = 25C unless otherwise noted Parameter DC Current Gain Conditions Min. VCE = 5V, IC = 50mA 30 0.9 Max Units DIVID3 Variation Ratio of hFE3 Between Die 1 and Die 2 hFE3(Die1)/hFE3(Die2) V CE(sat) Collector-Emitter Saturation Voltage IC = 10mA, IB = 1mA IC = 50mA, IB = 5mA 0.15 0.2 V V V BE(sat) Base-Emitter Saturation Voltage IC = 10mA, IB = 1mA IC = 50mA, IB = 5mA 1 1 V V V BE(on) Base-Emitter On Voltage VCE = 5V, IC = 10mA 1 V DEL Difference of V BE(on) Between Die1 and Die 2 VBE(on)(Die1)-VBE(on)(Die2) 8 mV -8 1.1 Small Signal Characteristics C ob Output Capacitance VCB = 10V, f = 1MHz 6 pF C ib Input Capacitance VCB = 0.5V, f = 1MHz 20 pF fT Current Gain Bandwidth Product VCE = 10V, IC = 10mA, f = 100MHz 300 MHz NF Noise Figure VCE = 5V, IC = 200mA, f = 1MHz, RS = 20KW, B = 200Hz 8 dB hfe Small Signal Current Gain VCE = 10V, IC = 1.0mA, f = 1.0KHz (c) 2007 Fairchild Semiconductor Corporation FMBM5551 Rev. 1.0.0 100 50 250 www.fairchildsemi.com 2 FMBM5551 -- NPN General Purpose Amplifier Electrical Characteristics (Continued) Figure 1. Typical Pulsed Current Gain vs Collector Current Figure 2. Collector-Emitter Saturation Voltage vs Collector Current Figure 3. Base-Emitter Saturation Voltage vs Collector Current Figure 4. Base-Emitter On Voltage vs Collector Current Figure 5. Collector Cutoff Current vs Ambient Temperature Figure 6. Collector-Emitter Breakdown Voltage with Resistance Between Emitter-Base (c) 2007 Fairchild Semiconductor Corporation FMBM5551 Rev. 1.0.0 www.fairchildsemi.com 3 FMBM5551 -- NPN General Purpose Amplifier Typical Characteristics (Continued) Figure 1. Input and Output Capacitance vs Reverse Voltage Figure 2. Small Signal current Gain vs Collector Current (c) 2007 Fairchild Semiconductor Corporation FMBM5551 Rev. 1.0.0 www.fairchildsemi.com 4 FMBM5551 -- NPN General Purpose Amplifier Typical Characteristics FMBM5551 -- NPN General Purpose Amplifier Mechanical Dimensions SuperSOTTM-6 Dimensions in Millimeters (c) 2007 Fairchild Semiconductor Corporation FMBM5551 Rev. 1.0.0 www.fairchildsemi.com 5 The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) Power247(R) POWEREDGE(R) Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 Green FPSTM Green FPSTM e-SeriesTM GTOTM i-LoTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FPSTM FRFET(R) Global Power ResourceSM (R) PDP-SPMTM Power220(R) SuperSOTTM-8 SyncFETTM The Power Franchise(R) TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) UniFETTM VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I31 (c) 2008 Fairchild Semiconductor Corporation FMBM5551 Rev. A1 www.fairchildsemi.com 6 FMBM5551 NPN General Purpose Amplifier TRADEMARKS