FMBM5551 — NPN General Purpose Amplifier
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
FMBM5551 Rev. 1.0.0 1
September 2008
FMBM5551
NPN General Purpose Amplifier
• This device has matched dies
• Sourced from process 16.
• See MMBT5551 for characteristics
Absolute Maximum Ratings *
* Pd total, for both transistors. For each transistor, Pd = 350mW
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 160 V
VCBO Collector-Base Voltage 180 V
VEBO Emitter-Base Voltage 6 V
ICCollector Current (DC) 600 mA
PCCollector Dissipation (TC = 25°C) 0.7 W
TJJunction Temperature 150 °C
TSTG Storage Temperature Range -55 ~ 150 °C
TqJA Thermal Resistance, Junction to Ambient 180 °C/W
Symbol Parameter Conditions Min. Max Units
Off Characteristics
BVCEO Collector-Emitter Voltage IC = 1mA, IB = 0 160 V
BVCBO Collector-Base Voltage IC = 100mA, IE = 0 180 V
BVEBO Emitter-Base Voltage IC = 10mA, IC = 0 6 V
ICBO Collector Cut-off Current VCB = 120V
VCB = 120V, Ta = 100°C
50
50
nA
mA
IEBO Emitter Cut-off Current VEB = 4V 50 nA
On Characteristics
hFE1 DC Current Gain VCE = 5V, IC = 1mA 80
DIVID1 Variation Ratio of hFE1 Between Die 1 and Die 2 hFE1(Die1)/hFE1(Die2) 0.9 1.1
hFE2 DC Current Gain VCE = 5V, IC = 10mA 80 250
DIVID2 Variation Ratio of hFE2 Between Die 1 and Die 2 hFE2(Die1)/hFE2(Die2) 0.95 1.05
C1
E1
C2
B1
E2
B2
SuperSOTTM-6
Mark: .3S2
pin #1
Dot denotes pin #1
FMBM5551 — NPN General Purpose Amplifier
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
FMBM5551 Rev. 1.0.0 2
Electrical Characteristics (Continued) TC = 25°C unless otherwise noted
Symbol Parameter Conditions Min. Max Units
hFE3 DC Current Gain VCE = 5V, IC = 50mA 30
DIVID3 Variation Ratio of hFE3 Between Die 1 and Die 2 hFE3(Die1)/hFE3(Die2) 0.9 1.1
VCE(sat) Collector-Emitter Saturation Voltage IC = 10mA, IB = 1mA
IC = 50mA, IB = 5mA
0.15
0.2
V
V
VBE(sat) Base-Emitter Saturation Voltage IC = 10mA, IB = 1mA
IC = 50mA, IB = 5mA
1
1
V
V
VBE(on) Base-Emitter On Voltage VCE = 5V, IC = 10mA 1 V
DEL Difference of VBE(on) Between Die1 and Die 2 VBE(on)(Die1)-VBE(on)(Die2) -8 8 mV
Small Signal Characteristics
Cob Output Capacitance VCB = 10V, f = 1MHz 6 pF
Cib Input Capacitance VCB = 0.5V, f = 1MHz 20 pF
fTCurrent Gain Bandwidth Product VCE = 10V, IC = 10mA, f =
100MHz
100 300 MHz
NF Noise Figure VCE = 5V, IC = 200mA, f = 1MHz,
RS = 20KW, B = 200Hz
8 dB
hfe Small Signal Current Gain VCE = 10V, IC = 1.0mA, f = 1.0KHz 50 250
FMBM5551 — NPN General Purpose Amplifier
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
FMBM5551 Rev. 1.0.0 3
Typical Characteristics
Figure 1. Typical Pulsed Current Gain
vs Collector Current
Figure 2. Collector-Emitter Saturation Voltage
vs Collector Current
Figure 3. Base-Emitter Saturation Voltage
vs Collector Current
Figure 4. Base-Emitter On Voltage
vs Collector Current
Figure 5. Collector Cutoff Current
vs Ambient Temperature
Figure 6. Collector-Emitter Breakdown Voltage
with Resistance Between Emitter-Base
FMBM5551 — NPN General Purpose Amplifier
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
FMBM5551 Rev. 1.0.0 4
Typical Characteristics (Continued)
Figure 1. Input and Output Capacitance
vs Reverse Voltage
Figure 2. Small Signal current Gain
vs Collector Current
FMBM5551 — NPN General Purpose Amplifier
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
FMBM5551 Rev. 1.0.0 5
Mechanical Dimensions
SuperSOTTM-6
Dimensions in Millimeters
FMBM5551 NPN General Purpose AmplifierFMBM5551
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
FMBM5551 Rev. A1 6
Rev. I31
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Definition of Terms
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