ISL9R860PF2 8 A, 600 V, STEALTH] Diode Description The ISL9R860PF2 is a STEALTH diode optimized for low loss performance in high frequency hard switched applications. The STEALTH family exhibits low reverse recovery current (Irr) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low Irr and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the STEALTH diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost. www.onsemi.com 1 1. Cathode 2 2. Anode Features * * * * * Stealth Recovery trr = 28 ns (@ IF = 8 A) Max Forward Voltage, VF = 2.4 V (@ TC = 25C) 600 V Reverse Voltage and High Reliability Avalanche Energy Rated This Device is Pb-Free and is RoHS Compliant 1 TO-220, 2-Lead CASE 221AS Applications * * * * * * 2 Switch Mode Power Supplies Hard Switched PFC Boost Diode UPS Free Wheeling Diode Motor Drive FWD SMPS FWD Snubber Diode MARKING DIAGRAM $Y&Z&3&K R860PF2 $Y &Z&3 &K R860PF2 = ON Semiconductor Logo = Data Code (Year & Week) = Lot = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 3 of this data sheet. (c) Semiconductor Components Industries, LLC, 2009 March, 2019 - Rev. 4 1 Publication Order Number: ISL9R860PF2/D ISL9R860PF2 MAXIMUM RATINGS TC = 25C unless otherwise noted Parameter Symbol Rating Units VRRM Peak Repetitive Reverse Voltage 600 V VRWM Working Peak Reverse Voltage 600 V DC Blocking Voltage 600 V VR IF(AV) Average Rectified Forward Current (TC = 75C) 8 A IFRM Repetitive Peak Surge Current (20 kHz Square Wave) 16 A IFSM Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60 Hz) 100 A Power Dissipation 26 W Avalanche Energy (1 A, 40 mH) 20 mJ -55 to 175 C 300 C PD EAVL TJ, TSTG TL Operating and Storage Temperature Range Maximum Temperature for Soldering Leads at 0.063 in (1.6 mm) from Case for 10 s Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ELECTRICAL CHARACTERISTICS TC = 25C unless otherwise noted Symbol Parameter Test Condition Min Typ Max Unit TC = 25C - - 100 mA TC = 125C - - 1.0 mA TC = 25C - 2.0 2.4 V TC = 125C - 1.6 2.0 V VR = 10 V , IF = 0 A - 30 - pF IF = 1 A, diF/dt = 100 A/ms, VR = 30 V - 18 25 ns IF = 8 A, diF/dt = 100 A/ms, VR = 30 V - 21 30 ns IF = 8 A, diF/dt = 200 A/s, VR = 390 V, TC = 25C - 28 - ns - 3.2 - A - 50 - nC - 77 - ns - 3.7 - OFF STATE CHARACTERISTICS IR Instantaneous Reverse Current VR = 600 V ON STATE CHARACTERISTICS VF Instantaneous Forward Voltage IF = 8 A DYNAMIC CHARACTERISTICS CJ Junction Capacitance SWITCHING CHARACTERISTICS trr Reverse Recovery Time trr Reverse Recovery Time Irr Maximum Reverse Recovery Current Qrr Reverse Recovery Charge trr Reverse Recovery Time S Softness Factor (tb/ta) Irr Maximum Reverse Recovery Current - 3.4 - A Qrr Reverse Recovery Charge - 150 - nC trr Reverse Recovery Time - 53 - ns S Softness Factor (tb/ta) - 2.5 - Irr Maximum Reverse Recovery Current - 6.5 - A Qrr Reverse Recovery Charge 195 - nC 500 - A/ms dIM/dt IF = 8 A, diF/dt = 200 A/s, VR = 390 V, TC = 125C IF = 8 A, diF/dt = 600 A/s, VR = 390 V, TC = 125C Maximum di/dt during tb - Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 ISL9R860PF2 THERMAL CHARACTERISTICS TC = 25C unless otherwise noted Parameter Symbol Test Condition RJC Thermal Resistance, Junction to Case RJA Thermal Resistance, Junction to Ambient Min Typ Max Unit - - 4.8 C/W - - 70 C/W TO-220F PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity ISL9R860PF2 R860PF2 TO-220F-2L Tube N/A N/A 50 TYPICAL CHARACTERISTICS 16 100 150C 12 25C 10 150C IR, Reverse Current [mA] 14 IF, Forward Current [A] 175C 175C 125C 8 100C 6 4 10 125C 100C 1 25C 2 0 0 0.25 0.5 0.75 1 1.25 1.5 1.75 2 2.25 0.1 100 2.5 2.75 200 VF, Forward Voltage [V] 90 t, Recovery Times [ns] t, Recovery Times [ns] tb at diF/dt = 200 A/ms, 500 A/ms, 800 A/ms 50 40 30 20 10 2 4 6 VR = 390 V, TJ = 125C 8 10 12 14 60 50 40 30 20 0 100 16 tb at IF = 16 A, 8 A, 4 A 70 10 ta at diF/dt = 200 A/ms, 500 A/ms, 800 A/ms 0 600 80 60 0 500 Figure 2. Reverse Current vs. Reverse Voltage VR = 390 V, TJ = 125C 70 400 VR, Reverse Voltage [V] Figure 1. Forward Current vs. Forward Voltage 80 300 ta at IF = 16 A, 8 A, 4 A 200 300 400 500 600 700 800 900 IF, Forward Current [A] diF/dt, Current Rate of Change [A/ms] Figure 3. ta and tb Curves vs. Forward Current Figure 4. ta and tb Curves vs. diF/dt www.onsemi.com 3 1000 ISL9R860PF2 Irr, Max reverse Recovery Current [A] 11 diF/dt = 800 A/ms VR = 390 V, TJ = 125C 10 9 8 diF/dt = 500 A/ms 7 6 5 diF/dt = 200 A/ms 4 3 2 0 2 4 6 8 10 12 14 14 10 IF = 16 A IF = 8 A 8 IF = 4 A 6 4 2 0 100 200 300 400 500 700 600 800 900 1000 IF, Forward Current [A] diF/dt, Current Rate of Change [A/ms] Figure 5. Maximum Reverse Recovery Current vs. Forward Current Figure 6. Maximum Reverse Recovery Current vs. diF/dt 6 VR = 390 V, TJ = 125C 5 4 IF = 16 A IF = 8 A 3 IF = 4 A 2 1 100 200 300 400 500 600 700 800 900 350 VR = 390 V, TJ = 125C 300 IF = 16 A 250 IF = 8 A 200 150 IF = 4 A 100 50 100 1000 200 300 400 500 600 700 800 900 diF/dt, Current Rate of Change [A/ms] diF/dt, Current Rate of Change [A/ms] Figure 7. Reverse Recovery Softness Factor vs. diF/dt Figure 8. Reverse Recovery Charge vs. diF/dt 1200 1000 800 600 400 200 0 1000 10 IF(AV), Average Forward Current [A] CJ, Junction Capacitance [A] VR = 390 V, TJ = 125C 12 16 QRR, Reverse Recovery Charge [nC] S, Reverse Recovery Softness Factor Irr, Max reverse Recovery Current [A] TYPICAL CHARACTERISTICS (continued) 0.1 1 10 8 6 4 2 0 100 50 75 100 125 150 VR, Reverse Voltage [V] TC, Case Temperature [C] Figure 9. Junction Capacitance vs. Reverse Voltage Figure 10. DC Current Derating Curve www.onsemi.com 4 175 ISL9R860PF2 TYPICAL CHARACTERISTICS (continued) ZJA, Normalized Thermal Impedance 2.0 1.0 0.1 DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1 / t2 PEAK TJ = PDM x ZJqA x RqJA + TA 0.01 SINGLE PULSE 0.001 10-5 10-4 10-3 10-2 10-1 100 101 t, Rectangular Pulse Duration (s) Figure 11. Normalized Maximum Transient Thermal Impedance TEST CIRCUIT AND WAVEFORMS VGE AMPLITUDE AND RG CONTROL diF/dt t1 AND t2 CONTROL IF L di F IF DUT CURRENT SENSE RG V GE t rr dt ta tb 0 + - MOSFET t1 0.25 I V DD RM IRM t2 Figure 12. trr Test Circuit I=1A L = 40 Mh R < 0.1 W VDD = 50 V EAVL = 1 / 2LI2 [VR(AVL) / (VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) CURRENT SENSE Q1 Figure 13. trr Waveforms and Definitions VAVL LR + IL V DD DUT IL IV - t0 Figure 14. Avalanche Energy Test Circuit t1 t2 t Figure 15. Avalanche Current and Voltage Waveforms STEALTH is trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO-220 Fullpack, 2-Lead / TO-220F-2FS CASE 221AS ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON67438E DATE 29 FEB 2012 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red. TO-220 FULLPACK, 2-LEAD / TO-220F-2FS PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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