© 2011 IXYS All rights reserved 1 - 2
20110923a
CS 20-22moF1
IXYS reserves the right to change limits, test conditions and dimensions.
VDRM = VRRM = 2200 V
IT(AV) = 18 A
ITSM = 200 A
High Voltage Phase Control Thyristor
in High Voltage ISOPLUS i4-PAC™
Features
• high voltage thyristor
- for line frequency
- chip technology for long term stability
• ISOPLUS i4-PAC™
high voltage package
- isolated back surface
- enlarged creepage towards heatsink
- enlarged creepage between high
voltage pins
- application friendly pinout
- high reliability
- industry standard outline
Applications
• controlled rectifiers
- power supplies
- drives
• AC switches
• capacitor discharge control
- flash tubes
- X-ray and laser generators
Thyristor
Symbol Conditions Maximum Ratings
VDRM / RRM 2200 V
IT(AV)
IT(AV)
sine 180°; TC = 90°C
square; d = 1/3; TC = 90°C
18
16
A
A
ITSM sine 180°; t = 10 ms; VR = 0 V; TVJ = 25°C 200 A
(di/dt)cr TVJ = TVJM
f = 50 Hz; tp = 200 µs
repetitive, IT = 40 A 100 A/µs
VD = 2/3 VDRM
IG = 0.45 A
diG /dt = 0.45 A/µs
non repetitive, IT = 20 A 250 A/µs
(dv/dt)cr TVJ = TVJM; VD = 2/3 VDRM
RGK = ∞; method 1 (linear voltage rise)
2500 V/µs
VRSM
VDSM
V
VRRM
VDRM
V
Type
2300 2200 CS 20-22moF1
5
2
1
1
5
Symbol Conditions Characteristic Values
(TVJ = 25°C, unless otherwise specified)
typ. max.
VTIT = 20 A; TVJ = 25°C
TVJ = 125°C
1.3
1.3
1.5 V
VGT
IGT
VD = 6 V 2.3
250
V
mA
VGD
IGD
VD = 2/3 VDRM; TVJ = TVJM 0.2
5
V
mA
ILtp = 10 µs; VD = 6 V
IG = 0.45 A; diG /dt = 0.45 A/µs
500 mA
IHVD = 6 V; RGK = ∞150 mA
tgd VD = ½ VDRM
IG = 0.45 A; diG /dt = 0.45 A/µs
2 µs
IR, IDVR = VRRM; VD = VDRM; TVJ = 25°C
TVJ = 125°C 2
50 µA
mA
RthJC DC current 0.92 K/W
© 2011 IXYS All rights reserved 2 - 2
20110923a
CS 20-22moF1
IXYS reserves the right to change limits, test conditions and dimensions.
Die konvexe Form des Substrates ist typ. < 0.05 mm über
der Kunststoffoberfläche der Bauteilunterseite
The convexbow of substrate is typ. < 0.05 mm over plastic
surface level ofdevice bottom side
min max min max
A 4.83 5.21 0.190 0.205
A1 2.59 3.00 0.102 0.118
A2 1.17 2.16 0.046 0.085
b 1.14 1.40 0.045 0.055
b2 1.47 1.73 0.058 0.068
b4 2.54 2.79 0.100 0.110
c 0.51 0.74 0.020 0.029
D 20.80 21.34 0.819 0.840
D1 14.99 15.75 0.590 0.620
D2 1.65 2.03 0.065 0.080
D3 20.30 20.70 0.799 0.815
E 19.56 20.29 0.770 0.799
E1 16.76 17.53 0.660 0.690
e 3.81 BSC 0.150 BSC
e1 11.43 BSC 0.450 BSC
L 19.81 21.34 0.780 0.840
L1 2.11 2.59 0.083 0.102
Q 5.33 6.20 0.210 0.244
R2.54 4.57 0.100 0.180
W-0.10 -0.004
Dim.
Millimeter
Inches
e
E
W
A
A2
A1
c3x b2
3x b
E1
D1
D2
L1
L D
R
Q
1 2 5
D3
e1
b4
Component
Symbol Conditions Maximum Ratings
TVJ
Tstg
-40 ... +125
-55 ... +125
°C
°C
VISOL IISOL < 1 mA; 50/60 Hz 2500 V~
FCmounting force with clip 20...120 N
Symbol Conditions Characteristic Values
min. typ.
dS, dAA pin - K pin
pin - backside metal
7
5.5
mm
mm
RthCH with heatsink compound 0.15 K/W
Weight 5.5 g
Dimensions in mm (1 mm = 0.0394")
