UNISONIC TECHNOLOGIES CO., LTD
2SD882
NPN SILICON TRANSISTOR
www.unisonic.com.tw
1 of 4
Copyright © 2005 Unisonic Technologies Co., Ltd
QW-R209-003,C
MEDIUM POWER LOW
VOLTAGE TRANSISTOR
FEATURES
* High current output up to 3A
* Low saturation voltage
* Complement to 2SB772
APPLICATIONS
* Audio power amplifier
* DC-DC convertor
* Voltage regulator
TO-126C
1
TO-126
1
TO-252
1
1
TO-251
1TO-92NL
*Pb-free plating product number: 2SD882L
ORDERING INFORMATION
Order Number Pin Assignment
Normal Lead Free Plating Package 1 2 3 Packing
2SD882-x-T60-K 2SD882L-x-T60-K TO-126 E C B Bulk
2SD882-x-T6C-K 2SD882L-x-T6C-K TO-126C E C B Bulk
2SD882-x-TM3-T 2SD882L-x-TM3-T TO-251 B C E Tube
2SD882-x-TN3-R 2SD882L-x-TN3-R TO-252 B C E Tape Reel
2SD882-x-TN3-T 2SD882L-x-TN3-T TO-252 B C E Tube
2SD882-x-T9N-B 2SD882L-x-T9N-B TO-92NL E C B Tape Box
2SD882-x-T9N-K 2SD882L-x-T9N-K TO-92NL E C B Bulk
2SD882L-x-T60-R (1) P ac k i ng Type
( 2)Pac k age Type
(3)Rank
(4)Lead Plating
(1) B: Tape Box, K: Bulk, T: Tube, R: Tape Reel
(2 ) T6 0: TO -1 26, T6 C: TO -1 26C, TM3: TO-25 1,
TN 3: TO-252, T9N: TO-92NL
(3) x: refer to Classificat ion of h
FE2
(4) L: Lead F r ee P lat ing, B lank: Pb/S n
2SD882
NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
2 of 4
www.unisonic.com.tw
QW-R209-003,C
ABSOLUTE MAXIMUM RATING
(Ta=25
℃
, unless otherwise specified )
PARAMETER SYMBOL RATINGS UNIT
Collector-Base Voltage V
CBO
40 V
Collector-Emitter Voltage V
CEO
30 V
Emitter-Base Voltage V
EBO
5 V
DC I
C
3 A
Collector Current Pulse I
CP
7 A
Base Current I
B
0.6 A
TO-92NL 0.5 W
Collector Dissipation
(
Ta=25
℃)
TO-251/TO-252/
TO-126/TO-126C P
C
1 W
Junction Temperature T
J
+150
℃
Storage Temperature T
STG
-55 ~ +150
℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(Ta=25
℃
, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-Base Breakdown Voltage BV
CBO
I
C
=100µA, I
E
=0 40 V
Collector-Emitter Breakdown Voltage BV
CEO
I
C
=1mA, I
B
=0 30 V
Emitter-Base Breakdown Voltage BV
EBO
I
E
=100µA, I
C
=0 5 V
Collector Cut-off Current I
CBO
V
CB
=30V, I
E
=0 1000 nA
Emitter Cut-off Current I
EBO
V
EB
=3V, I
C
=0 1000 nA
h
FE1
V
CE
=2V, I
C
=20mA 30 200
DC Current Gain (Note 1) h
FE2
V
CE
=2V, I
C
=1A 100 150 400
Collector-Emitter Saturation Voltage V
CE(SAT)
I
C
=2A, I
B
=0.2A 0.3 0.5 V
Base-Emitter Saturation Voltage V
BE(SAT)
I
C
=2A, I
B
=0.2A 1.0 2.0 V
Current Gain Bandwidth Product f
T
V
CE
=5V, I
C
=0.1A 80 MHz
Output Capacitance Cob V
CB
=10V, I
E
=0, f=1MHz 45 pF
Note 1:
Pulse test:
PW<300
µ
s,
Duty Cycle<2%
CLASSIFICATION OF h
FE2
RANK Q P E
RANGE 100-200 160-320 200-400
2SD882
NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
3 of 4
www.unisonic.com.tw
QW-R209-003,C
TYPICAL CHARACTERISTICS
Static Ch aracteristics
Collector-Emitter voltage (V)
C oll ector Curre nt, Ic (A)
04 812 1620
0
0.4
0.8
1.2
1.6
Case Temper atur e, T
C
(℃)
Derating Curv e of S afe Operating
Areas
De r at i ng, I
C
(%)
200150100500-50
0
50
100
150
S/b limited
Dissipation limited
I
B
=9mA
I
B
=8mA
I
B
=7mA
I
B
=6mA
I
B
=5mA
I
B
=4mA
I
B
=3mA
I
B
=2mA
I
B
=1mA
Cur r ent Gain-B an dwidth Pro duc t
Curre nt Gai n-
Bandwidt h P r oduct, F
T
(MHz)
Collector-Em itter V olt age
Col lect or Cu rrent , I
C
(A)
Safe O per at ing Ar ea
I
C
(max), Pulse
10mS1mS
0.1mS
Collector Current, Ic (A)
10
3
10
2
10
1
10
0
10
-2
10
-1
10
0
10
1
10
1
10
0
10
-1
10
-2
10
0
10
1
10
2
I
C
(max), D C
V
CE
=5V
I
B
=8mA
DC Current Gain
Collector Current , I
C
(mA) Collector Current , I
C
(mA)
Saturation Voltage
DC Cur r ent Gain, h
FE
Sat uratio n Voltag e (mV)
10
3
10
2
10
1
10
0
10
0
10
1
10
3
10
4
V
CE
=2V
10
4
10
3
10
2
10
0
10
1
10
2
10
4
10
1
10
0
10
3
V
BE(SAT)
V
CE(SAT)
2SD882
NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
4 of 4
www.unisonic.com.tw
QW-R209-003,C
TYPICAL CHARACTERISTICS(Cont.)
Collec tor Out put Capacitanc e
Collector-Base Voltage (V)
Output Capacitance (pF)
10
0
10
3
I
E
=0
f=1MHz
10
2
10
1
10
0
10
-1
10
-2
10
-3
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
m alfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and m ay be changed without notice.
