KBJ4005G-KBJ410G Vishay Lite-On Power Semiconducter 4.0A Glass Passivated Bridge Rectifier Features D D D D D D Glass passivated die construction High case dielectric strength of 1500VRMS Low reverse leakage current Surge overload rating to 120A peak Ideal for printed circuit board applications Plastic material - UL Recognition flammability classification 94V-0 14 413 D This series isUL listed under recognized component index, file number E95060 Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage g =Working peak reverse voltage =DC DC Bl Blocking ki voltage lt Test Conditions Type KBJ4005G KBJ401G KBJ402G KBJ404G KBJ406G KBJ408G KBJ410G Peak forward surge current Average forward current TC=115C Junction and storage temperature range Symbol VRRM =VRWM =V VR IFSM IFAV Tj=Tstg Value 50 100 200 400 600 800 1000 120 4 -65...+150 Unit V V V V V V V A A C Typ Unit V mA mA pF K/W Electrical Characteristics Tj = 25_C Parameter Forward voltage Reverse current Diode capacitance Thermal resistance junction to case Rev. A2, 24-Jun-98 Test Conditions IF=2A TC=25C TC=125C VR=4V, f=1MHz mounted on 300x300x1.6mm aluminum plate Type Symbol VF IR IR CD RthJC Min 40 9 Max 1 5 500 1 (4) KBJ4005G-KBJ410G Vishay Lite-On Power Semiconductor 6 1000 C D - Diode Capacitance ( pF ) IFAV - Average Forward Current ( A ) Characteristics (Tj = 25_C unless otherwise specified) 5 4 3 2 1 100 Resistive or inductive load 10 0.1 0 0 25 50 75 100 125 150 Tamb - Ambient Temperature ( C ) 15635 Figure 1. Max. Average Forward Current vs. Ambient Temperature 1.0 10 VR - Reverse Voltage ( V ) 15638 100 Figure 4. Typ. Diode Capacitance vs. Reverse Voltage 10 1000 IR - Reverse Current ( m A ) IF - Forward Current ( A ) Tj = 25C f = 1 MHz Tj = 25C 1.0 Tj = 150C 0.1 Tj = 150C 100 Tj = 125C Tj = 100C 10 1.0 Tj = 25C IF Pulse Width = 300 s 0.01 0 15636 0.4 0.8 1.2 1.6 1.8 VF - Forward Voltage ( V ) IFSM - Peak Forward Surge Current ( A ) Figure 2. Typ. Forward Current vs. Forward Voltage 180 0 15639 20 40 60 80 100 120 140 Percent of Rated Peak Reverse Voltage (%) Figure 5. Typ. Reverse Current vs. Percent of Rated Peak Reverse Voltage Tj = 150C 160 Single Half Sine-Wave (JEDEC Method) 120 80 40 0 1 15637 0.1 10 100 Number of Cycles at 60 Hz Figure 3. Max. Peak Forward Surge Current vs. Number of Cycles 2 (4) Rev. A2, 24-Jun-98 KBJ4005G-KBJ410G Vishay Lite-On Power Semiconducter Dimensions in mm 14472 Case: molded plastic Polarity: molded on body Approx. weight: 4.6 grams Mounting: through hole for #6 screw Mounting torque: 5.0 in-lbs maximum Marking: type number Rev. A2, 24-Jun-98 3 (4) KBJ4005G-KBJ410G Vishay Lite-On Power Semiconductor Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 4 (4) Rev. A2, 24-Jun-98