PRELIMINARY
MBR2530CT thru 2560 CT
MAXIMUM RAT INGS AND ELECTRICA L CHARACT ERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
FEATURES
Me tal of silicon rectifier,ma jority carrier conducton
Guard ri ng for tran s ient protec tio n
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification 94V-0
For use in low voltage,hi gh frequency inverters,free
wh elling,and polarity protection applications
MECHANICAL DATA
Case : TO-220AB molded plastic
Polarity : As marked on the body
Weight : 0.08 ounces, 2.24 grams
Mounting position : any
MBR
2550CT
50
35
50
MBR
2560CT
60
42
60
V
RMS
V
DC
V
RRM
I
(AV)
I
FSM
V
F
Maximum Average Forward
Rectified Current
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load (JEDEC Method)
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum forward
Voltage (per leg)
at (Note 1)
30
150
T
J
Operating Temperature Range
-55 to +150 C
T
STG
Storage Temperature Range
-55 to +175 C
I
R
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@T
J
=125 C
@T
J
=25 C 1.0
50.0
mA
V
A
A
V
UNIT
V
V
CHARACTERISTICS SYMBOL
0.65
0.75
-
-
Voltage rate of change (Rated VR)
dv/dt
V/us
10,000
Typical Thermal Resistance (Note 3)
R
0JC
C/W
1.5
@T
J
=125 C
@T
J
=25 C
@T
C
=130 C
TO-220AB
All Dimensions in millimet er
TO-220AB
DIM. MIN. MAX.
A
C
D
E
F
G
H
B14.22 15.88
10.67
9.6 5
2.5 4 3.43
6.86
5.8 4
8.2 6 9.28
- 6.35
12.70 14.73
0.5 1 2.79
N
M
L
K
J
I 1.14
2.2 9
0.64 0.3 0
3.53 4.09
3.56 4.83
1.14 1.40
2.92
2.0 3
PIN 1
PIN 3 PIN 2
CASE
A
B
C
K
J
I
H
G
F
E
D
N
M
L
H
PIN
132
SCHOTT KY BA RRIER RECTIFIERS
REVERSE VOL TAGE
- 30
to
60
Volts
FORWARD CURRENT
- 30
Amperes
MBR
2545CT
45
31.5
45
MBR
2530CT
30
21
30
MBR
2535CT
35
24.5
35
MBR
2540CT
40
28
40
@T
J
=125 C
@T
J
=25 C
IF = 15A,
IF = 15A,
IF = 30A,
IF = 30A,
-
-
0.82
0.73
0.2
40.0
Typical Junction Capacitance
per element (Note 2)
C
J
450
pF
NOTES : 1. 300us Pulse Width, 2% Duty Cycle.
2. Measured at 1.0MHz and applied reverse voltage of 4. 0V DC.
3. Thermal Resistance Junction to Case.
SEMICONDUCTOR
LITE-ON
REV. 2-PRE, 13-Sep-2001, KTHC15
PRELIMINARY
RATING AND CHARACT ERIST IC CURVES
M BR2 530CT t h ru MB R2560C T
FIG.5 - TYPICAL JUNCTIO N CAPACITANCE
CA PACITANCE , (pF)
RE VE RS E VOLTAG E , VO LTS
10
1100
10000
1000
100 0.1 4
TJ= 25 C, f= 1MHz
MBR2530CT - MBR2545CT
MBR2550CT - MBR2560CT
PERCENT OF RATED PEAK REVERSE VOLTAGE ,(%)
FIG.3 - TYPICAL REVERSE CHARACT ERISTICS
INSTANTANEOUS
REVERSE CURRENT ,(mA)
20 40 120 140
0
0.001
0.1
1.0
100.0
10.0
60 80 100
TJ= 125 C
0.01 TJ= 25 C
TJ= 75 C
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
FIG.4 - TYPICAL FO RWARD CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT ,(A)
0.1 0.2 0.6 0.7
0.1
10
100
0.3 0.4 0.5
0.01 0.9
0.8
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
INSTANTANEOUS FORWARD CURRENT ,(A)
0
PULSE WIDTH 300us
2% Duty cycle
TJ= 25 C
MBR25 30CT - MBR2 545CT
MBR2550CT &- MBR2560CT
1.0
MBR2530CT - MBR2545CT
MBR2550CT &- MBR2560CT
TJ= 150 C
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
NUMBER OF CYCLES AT 60Hz
PE AK FOR WARD SU RGE CURREN T,
AMPERES
1 5 10 50 100220
0
25
50
75
100
125
150
FIG.1 - FORWARD CURRENT DERATING CURVE
AV ERAGE FO RWARD CURRENT
AMPERES
8.3ms Single Ha lf-Sine-Wave
(JEDEC METHOD)
CASE TEMPERA TURE , C
25 75 100 125 150
10
050
40
175
30
0
20
RESISTIVE OR
IND UC TIVE LO AD
REV. 2-PRE, 13-Sep-2001, KTHC15