2N/SST5460 Series
Vishay Siliconix
Document Number: 70262
S-04030—Rev. D, 04-Jun-01 www.vishay.com
9-1
P-Channel JFETs
2N5460 SST5460
2N5461 SST5461
2N5462 SST5462
PRODUCT SUMMARY
Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)
2N/SST5460 0.75 to 6 40 1 –1
2N/SST5461 1 to 7.5 40 1.5 –2
2N/SST5462 1.8 to 9 40 2 –4
FEATURES BENEFITS APPLICATIONS
DHigh Input Impedance
DVery Low Noise
DHigh Gain: AV = 80 @ 20 mA
DLow Capacitance: 1.2 pF Typical
DLow Signal Loss/System Error
DHigh System Sensitivity
DHigh-Quality Low-Level Signal
Amplification
DLow-Current, Low-Voltage Amplifiers
DHigh-Side Switching
DUltrahigh Input Impedance
Pre-Amplifiers
DESCRIPTION
The 2N/SST5460 series are p-channel JFETs designed to
provide all-around performance in a wide range of amplifier
and analog switch applications.
The 2N series, TO-226AA (TO-92), and SST series, TO-236
(SOT-23), plastic packages provide low cost options, and are
available in tape-and-reel for automated assembly, (see
Packaging Information).
TO-226AA
(TO-92)
Top View
S
G
D
1
2
3
D
S
G
TO-236
(SOT-23)
2
3
1SST5460 (B0)*
SST5461 (B1)*
SST5462 (B2)*
*Marking Code for TO-236
Top View
2N5460
2N5461
2N5462
ABSOLUTE MAXIMUM RATINGS
Gate-Drain Voltage 40 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate-Source Voltage 40 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Current –10 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature –65 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature –55 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (1/16” from case for 10 sec.) 300_C. . . . . . . . . . . . . . . . . . .
Power Dissipationa350 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes
a. Derate 2.8 mW/_C above 25_C
2N/SST5460 Series
Vishay Siliconix
www.vishay.com
9-2 Document Number: 70262
S-04030—Rev. D, 04-Jun-01
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
2N/SST5460 2N/SST5461 2N/SST5462
Parameter Symbol Test Conditions TypaMin Max Min Max Min Max Unit
Static
Gate-Source
Breakdown Voltage V(BR)GSS IG = 10 mA , VDS = 0 V 55 40 40 40 V
Gate-Source Cutoff Voltage VGS(off) VDS = –15 V, ID = –1 mA0.75 6 17.5 1.8 9 V
Saturation Drain CurrentbIDSS VDS = –15 V, VGS = 0 V –1–5–2–9–4–16 mA
VGS = 20 V, VDS = 0 V 0.003 5 5 5 nA
Gate Reverse Current IGSS TA = 100_C0.0003 1 1 1 mA
Gate Operating Current IGVDG = –20 V, ID = –0.1 mA 3
Drain Cutoff Current ID(off) VDS = –15 V, VGS = 10 V –5pA
ID = –0.1 mA 1.3 0.5 4
Gate-Source Voltage VGS VDS = –15 V ID = –0.2 mA 2.3 0.8 4.5
ID = –0.4 mA 3.8 1.5 6 V
Gate-Source
Forward Voltage VGS(F) IG = –1 mA , VDS = 0 V –0.7
Dynamic
Common-Source
Forward T ransconductance gfs VDS = –15 V, VGS = 0 V 1 4 1.5 5 2 6 mS
Common-Source
Output Conductance gos
VDS = –15 V, VGS = 0 V
f = 1 kHz 75 75 75 mS
Common-Source 2N 4.5 7 7 7
Reverse T ransfer
Capacitance Ciss SST 4.5
Common-Source
Reverse T ransfer
Capacitance Crss VDS = –15 V, VGS = 0 V
f = 1 MHz 1.2 pF
Common-Source 2N 1.5 2 2 2
Common-Source
Output Capacitance Coss SST 1.5
Equivalent Input VDS = –15 V, VGS = 0 V 2N 15 115 115 115 nV⁄
√
Equivalent Input
Noise Voltage enVDS = –15 V, VGS = 0 V
f = 100 Hz SST 15 nV
⁄
√Hz
VDS = –15 V, VGS = 0 V
W
2N 0.2 2.5 2.5 2.5
Noise Figure NF f = 100 Hz, RG = 1 M
W
BW = 1 Hz SST 0.2 dB
Notes
a. Typical values are for DESIGN AID ONL Y, not guaranteed nor subject to production testing. PSCIB
b. Pulse test: PW v300 ms duty cycle v2%.
2N/SST5460 Series
Vishay Siliconix
Document Number: 70262
S-04030—Rev. D, 04-Jun-01 www.vishay.com
9-3
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
–20
0246810
–16
–12
–8
–4
0
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
VGS(off) – Gate-Source Cutoff Voltage (V)
gfs @ VDS = –15 V, VGS = 0 V
IDSS @ VDS = –15 V, VGS = 0 V
f = 1 kHz
gfs
IDSS
5
0
2.5
1000
0246810
800
600
400
200
0
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
VGS(off) – Gate-Source Cutoff Voltage (V)
rDS @ ID = –100 mA, VGS = 0 V
gos @ VDS = –15 V, VGS = 0 V
f = 1 kHz
rDS gos
100
80
60
40
20
0
–2
0–4–8–12 –16 –20
–1.6
–1.2
–0.8
–0.4
0
Output Characteristics
VDS – Drain-Source Voltage (V)
– Drain Current (mA)
ID
0.2 V
0.4 V
0.6 V
0.8 V
1.0 V
VGS = 0 V
VGS(off) = 1.5 V
–0.5
0–0.2 –0.4 –0.6 –0.8 –1
–0.4
–0.3
–0.2
–0.1
0
Output Characteristics
VDS – Drain-Source Voltage (V)
– Drain Current (mA)
ID
0.4 V
0.6 V
0.8 V
1.0 V
1.2 V
VGS = 0 V
–10
0–4–8–12 –16 –20
–8
–6
–4
–2
0
Output Characteristics
VDS – Drain-Source Voltage (V)
– Drain Current (mA)
ID
VGS = 0 V
0.5 V
2.0 V
1.0 V
1.5 V
VGS(off) = 3 V
–2
0–0.2 –0.4 –0.6 –0.8 –1
–1.6
–1.2
–0.8
–0.4
0
Output Characteristics
VDS – Drain-Source Voltage (V)
– Drain Current (mA)
ID
VGS = 0 V
0.5 V
2.0 V
2.5 V
1.0 V
1.5 V
VGS(off) = 3 V
VGS(off) = 1.5 V
0.2 V
S)gos– Output Conductance ( m
IDSS – Saturation Drain Current (mA)
gfs – Forward Transconductance (mS)
rDS(on) – Drain-Source On-Resistance ( Ω )
2N/SST5460 Series
Vishay Siliconix
www.vishay.com
9-4 Document Number: 70262
S-04030—Rev. D, 04-Jun-01
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
–5
0 0.4 0.8 1.2 1.6 2
–4
–3
–2
–1
0
Transfer Characteristics
TA = –55_C
125_C
– Drain Current (mA)
ID
VGS – Gate-Source Voltage (V)
25_C
–10
012345
–8
–6
–4
–2
0
Transfer Characteristics
VGS – Gate-Source Voltage (V)
TA = –55_C
125_C
– Drain Current (mA)
ID
25_C
–0.1 –1–10
1000
800
0
600
400
200
On-Resistance vs. Drain Current
ID – Drain Current (mA)
TA = 25_C
VGS(off) = 1.5 V
3 V
4 V
10 nA
1 nA
0.1 pA 0–30 –40–20–10 –50
100 pA
10 p A
1 pA
Gate Leakage Current
VDG – Drain-Gate Voltage (V)
– Gate Leakage
IG
IGSS @ 125_C
IGSS @ 25_C
TA = 125_C
TA = 25_C
–5 mA
–5 mA
5
0 0.4 0.8 1.2 1.6 2
4
3
2
1
0
Transconductance vs. Gate-Source Voltage
TA = –55_C
25_C
125_C
VGS – Gate-Source Voltage (V)
5
012345
4
3
2
1
0
Transconductance vs. Gate-Source Voltage
TA = –55_C
25_C
125_C
VGS – Gate-Source Voltage (V)
VGS(off) = 1.5 V VDS = –15 VVGS(off) = 3 VVDS = –15 V
VGS(off) = 1.5 V VDS = –15 V
f = 1 kHz
VGS(off) = 3 VVDS = –15 V
f = 1 kHz
–1 mA
–0.1 mA
rDS(on) – Drain-Source On-Resistance ( Ω )
gfs – Forward Transconductance (mS)
gfs – Forward Transconductance (mS)
2N/SST5460 Series
Vishay Siliconix
Document Number: 70262
S-04030—Rev. D, 04-Jun-01 www.vishay.com
9-5
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
–0.01 –0.1 –1
100
80
0
60
40
20
AV– Voltage Gain
ID – Drain Current (mA)
Assume VDD = –15 V, VDS = –5 V
VGS(off) = 1.5 V
Circuit Voltage Gain vs. Drain Current
10
0 4 8 12 16 20
8
6
4
2
0
5
0 4 8 12 16 20
0
VGS – Gate-Source Voltage (V)
Common-Source Input Capacitance
vs. Gate-Source Voltage
– Input Capacitance (pF)Ciss
–5 V
–15 V
f = 1 MHz
Common-Source Reverse Feedback Capacitance
vs. Gate-Source Voltage
– Reverse Feedback Capacitance (pF)Crss
VGS – Gate-Source Voltage (V)
–5 V
–15 V
f = 1 MHz
2.5
–0.1 –1–10
10
1
0.1
Common-Source Forward Transconductance
vs. Drain Current
ID – Drain Current (mA)
TA = –55_C
125_C
10 100 1 k 100 k10 k
100
10
1–0.1 –1–10
20
16
0
12
8
4
Output Conductance vs. Drain Current
ID – Drain Current (mA)
TA = –55_C
125_C
Equivalent Input Noise Voltage vs. Frequency
f – Frequency (Hz)
VDS = –15 V
ID = –0.1 mA
ID = –1 mA 25_C
VDS = –15 V
f = 1 kHz
VGS(off) = 3 V
VDS = –15 V
f = 1 kHz
VGS(off) = 3 V
VGS(off) = 3 V
25_C
AV+gfs RL
1)RLgos RL+10 V
ID
gfs – Forward Transconductance (µS)
en – Noise Voltage nV / Hz
gos – Output Conductance (µS)
