High Power Bipolar Transistor
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Feature:
NPN plastic power transistors
General purpose amplier and switching applications
Characteristic Symbol BD243C Unit
Collector-Base Voltage (Open Emitter) VCBO
Max.
100 V
Collector Emitter Voltage (Open Base) VCEO
Collector Current IC6 A
Total Power Dissipation upto TC = 25°C Ptot 65 W
Junction Temperature Tj150 °C
Collector Current Saturation Voltage
IC = 6A, IB = 1A VCE (Sat) 1.5
V
DC Current Gain
IC = 0.3A; VCE = 4V hFE Min. 30
Ratings (at Ta = 25°C unless otherwise specied) Limiting Values
Collector-Base Voltage (Open Emitter) VCBO
Max.
100
VCollector Emitter Voltage (Open Base) VCEO
Emitter-Base Voltage (Open Collector) VEBO 5
Collector Current
IC
6
ACollector Current (Peak) 10
Base Current IB2
Total Power Dissipation upto TC = 25°C Ptot 65 W
Junction Temperature Tj150
°C
Storage Temperature Tstg -65 to +150
Absolute Maximum Ratings:
Pin Conguration:
1. Base
2. Collector
3. Emitter
4. Collector
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High Power Bipolar Transistor
Characteristic Symbol BD243C Unit
Thermal Resistance
From Junction to Case Rth (j-c) - 1.92 °C/W
Characteristics Ta = 25°C unless otherwise specied
Collector Cut off Current
IB = 0; VCE = 60V
VBE = 0; VCE = VCEO
ICEO
ICES Max.
0.7
0.4 mA
Emitter Cut off Current
IC = 0; VEB = 5V IEBO 1
Breakdown Voltages
IC = 30mA; IB = 0
IC = 1mA; IE = 0
IE = 1mA; IC = 0
VCEO (Sus)*
VCBO
VEBO
Min.
100
100
5
V
Saturation Voltage
IC = 6A; IB = 1A VCE (sat)*
Max.
1.5
Base Emitter On Voltage
IC = 6A; VCE = 4V VBE (on)* 2
DC Current Gain
IC = 0.3A; VCE = 4V
IC = 3A; VCE = 4V
hFE*
Min.
30
15 -
Small Signal Current Gain
IC = 0.5A; VCE = 10V; f = 1kHz hfe 20
Transition Frequency
IC = 0.5A; VCE = 10V; f = 1MHz fT (1) 3MHz
Absolute Maximum Ratings:
* Pulse Test: Pulse Width ≤300μs; Duty Cycle ≤2%.
(1) fT = |hfe| • ftest
High Power Bipolar Transistor
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Page <3> V1.013/12/12
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Description Part Number
Transistor, NPN, TO-220 BD243C
Part Number Table
Dimensions Min. Max.
A 14.42 16.51
B 9.63 10.67
C 3.56 4.83
D - 0.9
E1.15 1.4
F 3.75 3.88
G 2.29 2.79
H2.54 3.43
J - 0.56
K 12.7 14.73
L2.8 4.07
M 2.03 2.92
N - 31.24
O
Dimensions : Millimetres
Pin Conguration:
1. Base
2. Collector
3. Emitter
4. Collector