G E SOLID STATE 3875081 GE SOLID STATE OL DE f3s7soa1 oo179s1 2 O1E 17951 D Signal Transistors 2N5307, 8, 8A, GES5307, 8, 8A T2927 Silicon Darlington Transistors TO-92 TO-98 The GE/RCA 2N5307, 08, O8A and GES5307, 8, and 8A are planar, epitaxial, passivated NPN silicon Darlington transis- tors designed for preamplifier stages requiring input impe- dances of several megohms or extremely low-level, high-gain low-noise amplifier applications. These types can MAXIMUM RATINGS, Absolute-Maximum Values: COLLECTOR TO EMITTER VOLTAGE (Vg) EMITTER TO BASE VOLTAGE (Vegg)...----.. 2... COLLECTOR TO BASE VOLTAGE (Vcpo) CONTINUOUS COLLECTOR CURRENT ([g) . . COLLECTOR CURRENT {PULSED)* (Ic)... CONTINUOUS BASE CURRENT (Ip) .......... TOTAL POWER DISSIPATION (T, < 25C) (P;) DERATE FACTOR (Ta > 25C)... 2... ccc ccc cca cececcaeeerevacs OPERATING TEMPERATURE (T,) STORAGE TEMPERATURE (Terq) be used in medium-speed switching circuits in consumer and industrial control applications. The 2N5307, 08, and O8A are supplied in JEDEC TO-98 pack- age, the GES5307, 08, and 08A are supplied in JEDEC TO-92 package. Devices in TO-98 package are supplied with and without seating flange (see Dimensional Outline). see eeteeee ~65 to + 150C LEAD TEMPERATURE, 1/16 + 1/32(1.58mm + 0.8mm) from case for 10s max (Tle ccc cece cece cette ene e ene e eee e nee + 260C *Pulsed Conditions: Pulse width < 300 us, Duty factor < 2%. File Number 2014 55G E SOLID STATE on ve ffsazsoss ooizase 4 Bf 3875081 GE SOLID STATE Q1E 17952 D Signal Transistors T 2 9 ia a2 2N5307, 8, 8A, GES5307, 8, 8A ELECTRICAL CHARACTERISTICS, At Ambient Temperature (Ts) = 25C Unless Otherwise Specified LIMITS CHARACTERISTICS SYMBOL MIN. MAX, UNITS Collector-To-Emitter Breakdown Voltage (ig = 10 mA, Ip = 0) BVceo 40 - Collector-To-Base Breakdown Voltage (ig = 0.1pA, Ie = 0} BVogo 40 - "4 Emitter-To-Base Breakdown Voltage (ig = 0.1pA, Ie = 0) BVepo 12 - DC Forward Current Transfer Ratio (lg = 2MA, Vor = 5V) 2N5307, GESS307 2,000 20,000 (Ic = 100MA, Voge = 5V) -2N5307, GES5307 hee 6,000 - _ (lg = 2MA, Voge = 5V) -2N5308, GESS308A 7,000 70,000 (lg = 100MA, Vee = 5V) _-2N5308, GES5308A 20,000 - : Collector-To-Emitter Saturation Voltage i (ig = 200mA, Ig = 0.2mA) Vee(sat) - 1.4 ] Base-To-Emitter Saturation Voltage (ig = 200m<A, Ig = 0.2mA)} Vag(sat) _ 1.6 Vv Base-To-Emitter Voltage (lg = 200mMA, Vor = 5y) Vee - 1.5 Collector-To-Base Cutoff Current (cp = 25V, Ie = 0) Icopo - 400 nA (og = 25V, Ir = 0,T, = 100)C) - 20 BA Smail-Signal Current Transfer Ratio (cE = Sig = 2mA,f = 1KHZ) _2N5307, GES5307 Ne 2,000 - (oe = 5V. Ig = 2mA,f = 1 KHZ) 2N5308, 8A, GES5308, BA 7,000 - - Wce = 5V lo = 2mA, f = 10MHZ) Intel 15.6 ~ dB Input Capacitance (Veg = 0.5V,f = 1 MHZ) Cop 10.5 Typicat pF Output Capacitance 76 (Vop = 10V, f = 1 MHZ) Cop Typical 10 Input Impedance (Voce = 5V.I = 2mA, f = 1KHz) 650 Typicat kKQ Gain-Bandwidth Product (ce = 5V,Ig = 2mA, f = 10MHz) fr 60 = MHZ Noise Figure (Ve = 5V, Ic = 0.6mA, Rg = 160 kn, 195 f = 10 Hz, to 10 kHz, Bandwidth = 15.7 kHz) 2N5308A, GES5308A efi Typical 230 nViV Hz 56G E SOLID STATE on pve ffss7sos, coizasa 9 Signal Transistors x wa u g z < E Fig. 1~ 2N5307, 8, 8A, GES5307. 8. 8A T2927 VOLTAGE TEMPERATURE (Ta) = 25C ~ & 5 my = a 9 6 = < z 9 nw TRANSFER RATIO (hrE) RATIO (hee) 4 468 468 ot { 10 102 103 001 1 10? 103 COLLECTOR CURRENT (Ic) - mA COLLECTOR CURRENT (Ic) - mA 925- 42655. 925 -42633 Typical dc forward-current transfer ratio characteristics. Fig. 2 Normalized de forward-current transfer ratio characieristics. NORMALIZED DC FORWARD-CURRENT TRANSFER RATIO (hg) 102 4 68) 3 10 AMBIENT TEMPERATURE (Ta) - C COLLECTOR CURRENT (Ic)- mA 92CS-42629 92CS- 42634 Fig. 3 Normalized do forward-current transfer ratio characteristics. Fig. 4 Typical collector-to-emitter saturation voltage characteristics. > = =. a wu a = w a F a 3 > oa & w a al o oO 4 10 102 104 COLLECTOR CURRENT (ic) - mA COLLECTOR-TO-EMITTER VOLTAGE (VcE) - V 9208-42636 9203-42631 Fig. 5 Typical base-to-emitter saturation voltage characteristics. Fig. 6 Typical output characteristics. 57G E SOLID STATE Oo, pe f)sazsoax couzasy a 3875081 GE SOLID STATE O1E 17954 BD Signal Transistors T 2. G27 2N5307, 8, 8A, GES5307, 8, 8A VOLTAGE > a a 2 w 2 5 9S > i = rE 7 w @ < a 1 10 102 COLLECTOR-TO-EMITTER VOLTAGE (Vc_E) - COLLECTOR CURRENT (ig) mA 92C$-42630 92CS-42635 Fig. 7 Typical output characteristics, Fig. 8~ Typical transfer characteristics. {leBo) - pa . 5 uw =z J a 3 we we $ 5 3 mw 2 9 e & a E 3 ws 00 AMBIENT TEMPERATURE (Ta} - C AMBIENT TEMPERATURE (Ta) - C 9205-42627 9205-42626 Fig. 9 Typical collector-to-base cutoff current characteristic. Fig. 10Typical emitter-to-base cutoff current characteristic. COLLECTOR-T0-EMITTER VOLTAGE (Woe) =5 4 [AMBIENT TEMPERATURE (Ta) = . orm SOURCE RESISTANCE (Aig), Rg ~< 7, LE os > Lee a3 TERMINAL CONNECTIONS > oy S x ore] = TO-92 Package 2 7 wo Lead 1 - Emitter <o2 a 2 Lead 2 - Base z ac ot Lead 3 - Collector z a= 2 w -__o # = O14 = n (1 kta) 5 2 I (10 ki tay WH) ee el maT CP ~ = | E *n (10 ke) wt ~fPr = Sy = t o1 4 6 1 2 TERMINAL CONNECTIONS COLLECTOR CURRENT (ic) - mA Cea TO-98 Package NOTE: L QUE TO THENOISE CHARACTERISTICS OF THIS DEVICE ead 1 - Emitter VERSUS FREQUENCY, CALCULATION OF NOISE FIGURE Lead 2 - Collector (NF) FROM eq, ij YALUES 1S NOT ACCURATE [AS13 THE Lead 3 - Base CASE WITH FIELD-EFFECT TRANSISTORS (FETS)]. soce-azeas Fig. 11 Equivalent input neise-voltage and noise-current characteristics.