Order this document by MPF910/D SEMICONDUCTOR TECHNICAL DATA N-Channel -- Enhancement 3 DRAIN 2 GATE 1 SOURCE 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit VDS 60 Vdc VGS VGSM 20 40 Vdc Vpk Drain Current - Continuous(1) - Pulsed(2) ID IDM 0.5 1.0 Adc Total Device Dissipation @ TA = 25C Derate above 25C MPF910 PD 1.0 8.0 Watts mW/C Total Device Dissipation @ TC = 25C Derate above 25C MFE910 PD 6.25 50 Watts mW/C TJ, Tstg - 65 to +150 C Drain - Source Voltage Gate-Source Voltage -- Continuous -- Non-repetitive (tp 50 s) Operating and Storage Junction Temperature Range 3 CASE 29-05, STYLE 22 TO-92 (TO-226AE) ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero-Gate-Voltage Drain Current (VDS = 40 V, VGS = 0) IDSS -- 0.1 10 Adc Gate Reverse Current (VGS = 10 V, VDS = 0) IGSS -- 0.01 10 nAdc V(BR)DSS 60 90 -- Vdc Gate Threshold Voltage (VDS = VGS, ID = 1.0 mA) VGS(th) 0.3 1.5 2.5 Vdc Drain-Source On-Voltage (VGS = 10 V, ID = 500 mA) VDS(on) -- -- 2.5 Vdc On-State Drain Current (VDS = 25 V, VGS = 10 V) ID(on) 500 -- -- mA Forward Transconductance (VDS = 15 V, ID = 500 mA) gfs 100 -- -- mmhos OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0, ID = 100 A) ON CHARACTERISTICS 1. The Power Dissipation of the package may result in a lower continuous drain current. 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. v v TMOS is a registered trademark of Motorola, Inc. REV 1 Motorola Small-Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1997 1 MPF910 RESISTIVE SWITCHING +25 V To Sampling Scope 50 Input 23 20 dB 50 Attenuator Vin 40 pF Pulse Generator 50 Vout 50 1.0 M Figure 1. Switching Test Circuit toff ton 90% 90% 10% Output Vout Inverted 50% Input Vin 10% 90% 50% Pulse Width 10 v Figure 2. Switching Waveforms 1.6 2.0 I D(on), DRAIN CURRENT (AMPS) V GS(th) , THRESHOLD VOLTAGE 2.0 VDS = VGS ID = 1.0 mA 1.2 0.8 0.4 0 -50 100 0 50 TJ, JUNCTION TEMPERATURE 150 (C) Figure 3. VGS(th) Normalized versus Temperature 2 VGS = 10 V 1.6 9.0 V 1.2 7.0 V 8.0 V 6.0 V 0.8 5.0 V 0.4 4.0 V 0 1.0 2.0 3.0 VDS, DRAIN - SOURCE VOLTAGE (VOLTS) 4.0 Figure 4. On-Region Characteristics Motorola Small-Signal Transistors, FETs and Diodes Device Data MPF910 100 VGS = 10 V 9.0 V 1.6 C, CAPACITANCE (pF) I D(on), DRAIN CURRENT (AMPS) 2.0 8.0 V 1.2 7.0 V 0.8 6.0 V 5.0 V 0.4 80 VGS = 10 V 60 40 Ciss 20 Coss 4.0 V Crss 0 20 10 30 VDS, DRAIN - SOURCE VOLTAGE (VOLTS) 40 V DS , DRAIN-SOURCE VOLTAGE (VOLTS) 40 50 60 10 20 30 VDS, DRAIN - SOURCE VOLTAGE (VOLTS) Figure 6. Capacitance versus Drain-to-Source Voltage Figure 5. Output Characteristics 10 ID = 1.5 A 1.0 A VGS = 10 V 5.0 0 0.5 A 1.0 0.5 0.4 0.3 0.2 0.1 -50 -30 -10 10 30 50 70 90 110 130 150 TJ, JUNCTION TEMPERATURE Figure 7. On Voltage versus Temperature Motorola Small-Signal Transistors, FETs and Diodes Device Data 3 MPF910 PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSIONS D AND J APPLY BETWEEN L AND K MIMIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R SEATING PLANE P L F K X X DIM A B C D F G H J K L N P R V D G H J V 1 2 3 SECTION X-X N C N CASE 029-05 (TO-226AE) ISSUE AD INCHES MIN MAX 0.175 0.205 0.290 0.310 0.125 0.165 0.018 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.018 0.024 0.500 --- 0.250 --- 0.080 0.105 --- 0.100 0.135 --- 0.135 --- MILLIMETERS MIN MAX 4.44 5.21 7.37 7.87 3.18 4.19 0.46 0.56 0.41 0.48 1.15 1.39 2.42 2.66 0.46 0.61 12.70 --- 6.35 --- 2.04 2.66 --- 2.54 3.43 --- 3.43 --- STYLE 22: PIN 1. SOURCE 2. GATE 3. DRAIN Motorola reserves the right to make changes without further notice to any products herein. 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