VWI 15-12P1 IC25 IGBT Module VCES VCE(sat) typ. Sixpack in ECO-PAC 2 S9 Preliminary data = 18 A = 1200 V = 2.3 V K 12 N9 R5 L9 N5 NTC X 18 W 14 K 13 A5 D5 H5 A1 F3 C1 K 10 G1 Pin arangement see outlines Features t IGBTs Maximum Ratings VCES TVJ = 25C to 150C TC = 25C TC = 80C ICM VCEK VGE = 15 V; RG = 82 ; TVJ = 125C RBSOA, Clamped inductive load; L = 100 H tSC (SCSOA) VCE = 720 V; VGE = 15 V; RG = 82 ; TVJ = 125C non-repetitive Ptot TC = 25C Symbol Conditions VCE(sat) IC = 10 A; VGE = 15 V; TVJ = 25C TVJ = 125C VGE(th) IC = 0.4 mA; VGE = VCE ICES VCE = VCES; td(on) tr td(off) tf Eon Eoff e IC25 IC80 IGES V 20 V -o VGES 1200 18 14 A A 20 A VCES 10 s 90 W s a h 2.3 2.7 p * FRED diodes - fast reverse recovery - low forward voltage * Industry Standard Package - solderable pins for PCB mounting - isolated DCB ceramic base plate Typical Applications Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. 4.5 VGE = 0 V; TVJ = 25C TVJ = 125C * NPT IGBT's - positive temperature coefficient of saturation voltage - fast switching 2.7 V V 6.5 V 0.5 mA mA 200 nA 0.8 VCE = 0 V; VGE = 20 V Inductive load, TVJ = 125C VCE = 600 V; IC = 10 A VGE = 15 V; RG = 82 50 40 290 60 1.2 1.1 ns ns ns ns mJ mJ Cies QGon VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600 V; VGE = 15 V; IC = 10 A 600 45 pF nC RthJC RthJH (per IGBT) (per IGBT) with heatsink compound 2.7 1.4 K/W K/W * AC drives * power supplies with power factor correction 308 Conditions u Symbol IXYS reserves the right to change limits, test conditions and dimensions. (c) 2003 IXYS All rights reserved IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 1-2 www.ixys.net http://store.iiic.cc/ IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: (408) 982-0700, Fax: 408-496-0670 VWI 15-12P1 Dimensions in mm (1 mm = 0.0394") Diodes Symbol Conditions Maximum Ratings IF25 IF80 TC = 25C TC = 80C 15 10 Symbol Conditions Characteristic Values min. typ. max. VF IF = 10 A; TVJ = 25C TVJ = 125C IRM t rr IF = 10 A; diF/dt = -400 A/s; TVJ = 125C VR = 600 V; VGE = 0 V RthJC RthJH (per diode) (per diode) with heatsink compound 2.6 1.9 A A 3.0 V V 13 110 A ns 5.0 3.5 K/W K/W t Temperature Sensor NTC Conditions Characteristic Values min. typ. max. R25 B25/50 T = 25C 4.75 5.25 k K -o Component Conditions Maximum Ratings e C C IISOL 1 mA; 50/60 Hz; t = 1 s 3600 V~ Md mounting torque (M4) 1.5 - 2.0 14 - 18 50 Nm lb.in. m/s2 a Max. allowable acceleration Symbol Conditions dS dA Creepage distance on surface (Pin to heatsink) Strike distance in air (Pin to heatsink) h a VISOL p -40...+150 -40...+125 s TVJ Tstg Characteristic Values min. typ. max. 11.2 11.2 Weight mm mm 24 IXYS reserves the right to change limits, test conditions and dimensions. (c) 2003 IXYS All rights reserved g 308 Symbol 5.0 3375 u Symbol 2-2 http://store.iiic.cc/