VHF 28 IdAVM = 32 A VRRM = 800-1600 V Half Controlled Single Phase Rectifier Bridge with Freewheeling Diode VRSM VDSM VRRM VDRM V V 900 1300 1500 1700 800 1200 1400 1600 2 Type 1 VHF 28-08io5 VHF 28-12io5 VHF 28-14io5 VHF 28-16io5 Symbol Test Conditions IdAV IdAVM IFRMS, ITRMS TK = 85C, module module per leg IFSM, ITSM TVJ = 45C; VR = 0 V 1 3 6 4 2 3 6 4 8 Maximum Ratings 8 Features Package with DCB ceramic base plate Isolation voltage 3600 V~ Planar passivated chips 1/4" fast-on terminals UL registered E 72873 I2t (di/dt)cr (dv/dt)cr 28 32 23 A A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 300 330 A A TVJ = TVJM VR = 0 V t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 270 300 A A TVJ = 45C VR = 0 V t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 440 455 A2s A2s TVJ = TVJM VR = 0 V t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 365 370 A2s A2s TVJ = 125C f =50 Hz, tP =200 ms VD = 2/3 VDRM IG = 0.3 A, diG/dt = 0.3 A/ms repetitive, IT = 50 A 150 non repetitive, IT = 1/2 * IdAV A/ms 500 A/ms 1000 V/ms Applications Supply for DC power equipment DC motor control Advantages Easy to mount with two screws Space and weight savings Improved temperature and power cycling Dimensions in mm (1 mm = 0.0394") tp = 30 ms tp = 500 ms tp = 10 ms 10 V 10 5 1 0.5 W W W W -40...+125 125 -40...+125 C C C 3000 3600 V~ V~ 2-2.5 18-22 50 Nm lb.in. g PGAVM TVJ TVJM Tstg VISOL 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s Md Mounting torque (M5) (10-32 UNF) Weight TVJ = TVJM; VDR = 2/3 VDRM RGK = ; method 1 (linear voltage rise) TVJ = TVJM IT = ITAVM VRGM PGM Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. for resistive load IXYS reserves the right to change limits, test conditions and dimensions. (c) 2000 IXYS All rights reserved 1-3 VHF 28 Symbol Test Conditions Characteristic Values IR, ID VR = VRRM; VD = VDRM VT, VF IT, IF = 45 A; TVJ = 25C VT0 rT For power-loss calculations only (TVJ = 125C) TVJ = TVJM TVJ = 25C 5 0.3 mA mA 1.6 V 0.9 15 V mW VD = 6 V; TVJ = 25C TVJ = -40C TVJ = 25C TVJ = -40C TVJ = 125C 1.0 1.2 65 80 50 V V mA mA mA TVJ = TVJM; TVJ = TVJM; VD = 2/3 VDRM VD = 2/3 VDRM 0.2 5 V mA VGT VD = 6 V; IGT VGD IGD IL IG = 0.3 A; tG = 30 ms; diG/dt = 0.3 A/ms; 150 200 100 mA mA mA IH TVJ = 25C; VD = 6 V; RGK = 100 mA tgd TVJ = 25C; VD = 1/2 VDRM IG = 0.3 A; diG/dt = 0.3 A/ms 2 ms tq Qr TVJ = 125C, IT = 15 A, tP = 300 ms, VR = 100 V di/dt = -10 A/ms, dv/dt = 20 V/ms, VD = 2/3 VDRM typ. 150 75 ms mC RthJC per thyristor (diode); DC current per module per thyristor (diode); DC current per module 1.4 0.35 2.0 0.5 K/W K/W K/W K/W Creepage distance on surface Creepage distance in air Max. allowable acceleration 12.6 6.3 50 mm mm m/s2 RthJK dS dA a TVJ = 25C TVJ = -40C TVJ = 125C 10 1: IGT, TVJ = 125C 2: IGT, TVJ = 25C 3: IGT, TVJ = -40C V VG 1 1 2 3 6 4 0.1 4: PGAV = 0.5 W 5: PGM = 1 W 6: PGM = 10 W IGD, TVJ = 125C 1 10 5 100 1000 IG mA Fig. 1 Gate trigger range 1000 TVJ = 25C s tgd 100 typ. Limit 10 1 10 100 mA 1000 IG 750 Fig. 2 Gate controlled delay time tgd (c) 2000 IXYS All rights reserved 2-3 VHF 28 Fig. 3 Surge overload current per chip IFSM: Crest value, t: duration Fig. 4 I2t versus time (1-10 ms) per chip Fig. 5 Max. forward current at heatsink temperature Fig. 6 Power dissipation versus direct output current and ambient temperature Constants for ZthJK calculation: i 1 2 3 Rthi (K/W) ti (s) 0.3441 1.1554 1.5005 0.0344 0.12 0.5 Fig. 7 Transient thermal impedance junction to heatsink per chip (c) 2000 IXYS All rights reserved 3-3