SLD1134VL 650nm Pulsation Red Laser Diode For the availability of this product, please contact the sales office. Description The SLD1134VL is a pulsation red laser diode designed for DVD systems. M-274 Features * Low noise * Standard package (5.6mm) Application DVD Structure * AlGaInP quantum well-structure laser diode * PIN photo diode for optical power output monitor Recommended Optical Power Output 4mW Absolute Maximum Ratings (Tc = 25C) * Optical power output Pomax 5 mW * Reverse voltage VR LD 2 V PD 20 V * Operating temperature Topr -10 to +70 C * Storage temperature Tstg -40 to +85 C Pin Configuration Connection Diagram 3 COMMON PD LD 2 2 1 1 3 1. LD Anode 2. PD Anode 3. Common Bottom View Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. -1- E98Y11A18-PS SLD1134VL Electrical and Optical Characteristics Item Threshold current Operating current Symbol Tc: Case temperature Conditions Iop1 Iop2 1 Operating voltage Vop PO = 4mW Wavelength p PO = 4mW Positional accuracy Perpendicular Parallel // Position X, Y, Z Angle Typ. Max. Unit 65 80 mA 75 90 mA 120 mA 2.3 2.8 V 640 655 660 nm 25 35 40 degree 7 8.5 12 degree 80 m 2 degree 3 degree 0.7 mW/mA Ith PO = 4mW Radiation Angle Min. // PO = 4mW PO = 4mW Differential efficiency D PO = 4mW Astigmatism AS PO = 4mW Monitor current Imon PO = 4mW VR = 5V 1 Tc = 70C -2- 0.15 0.4 10 0.05 0.1 m 0.25 mA SLD1134VL Example of Representative Characteristics Optical power output vs. Forward current characteristics Optical power output vs. Monitor current characteristics Tc = 0 25 60 70C Tc = 0 25 60 70C Far field pattern (FFP) 5 Po = 4mW Tc = 25C Relative radiant intensity Po - Optical output [mW] 4 Imon 3 2 1 // 0 0 20 40 60 80 100 0 -40 -20 0 20 40 IF - Forward current [mA] 0 Angle [degree] 0.2 Imon - Monitor current [mA] Threshold current vs. Temperature characteristics Monitor current vs. Temperature characteristics 200 0.2 100 10 -20 Imon - Monitor current [mA] Ith - Threshold current [mA] Po = 4mW 0.1 0 0 20 40 60 80 -20 Tc - Case temperature [C] 0 20 40 Tc - Case temperature [C] -3- 60 80 SLD1134VL Temperature dependence of spectrum Po = 4mW Tc = 70C Relative radiant intensity Tc = 60C Tc = 25C Tc = 0C 645 650 655 660 p - Wavelength [nm] -4- 665 670 675 SLD1134VL Power output dependence of spectrum Tc = 25C Relative radiant intensity Po = 5mW Po = 4mW Po = 1mW 645 650 655 660 p - Wavelength [nm] -5- 665 670 675 SLD1134VL Notes on Operation Care should be taken for the following points when using this product. (1) This product corresponds to a Class 3B product under IEC60825-1 and JIS standard C6802 "Laser Product Emission Safety Standards". LASER DIODE LASER DIODE This product complies with 21 CFR Part 1040.10 and 1040.11 Sony Corporation LASER RADIATION AVOID DIRECT EXPOSURE TO BEAM MAXIMUM OUTPUT WAVELENGTH AVOID EXPOSURE Laser radiation is emitted from this aperture. 30 mW 600 - 950 nm CLASS III b LASER PRODUCT 6-7-35 Kitashinagawa, Shinagawa-ku,Tokyo 141-0001 Japan (2) Eye protection against laser beams Take care not to allow laser beams to enter your eyes under any circumstances. For observing laser beams, ALWAYS use safety goggles that block laser beams. Usage of IR scopes, IR cameras and fluorescent plates is also recommended for monitoring laser beams safely. (3) Gallium Arsenide This product uses gallium arsenide (GaAs). This is not a problem for normal use, but GaAs vapors may be potentially hazardous to the human body. Therefore, never crush, heat to the maximum storage temperature or higher, or place the product in your mouth. In addition, the following disposal methods are recommended when disposing of this product. 1. Engaging the services of a contractor certified in the collection, transport and intermediate treatment of items containing arsenic. 2. Managing the product through to final disposal as specially managed industrial waste which is handled separately from general industrial waste and household waste. (4) Prevention of surge current and electrostatic discharge Laser diodes are most sensitive to electrostatic discharge among semiconductors. When a large current is passed through the laser diode for even an extremely short time, the strong light emitted from the laser diode promotes deterioration and then destruction of the laser diode. Therefore, note that surge current should not flow to the laser diode driving circuit from switches and others. Also, if the laser diode is handled carelessly, it may be destroyed instantly because electrostatic discharge is easily applied by a human body. Therefore, be extremely careful about overcurrent and electrostatic discharge. (5) Use for special applications This product is not designed or manufactured for use in equipment used under circumstances where failure may pose a risk to life and limb, or result in significant material damage, etc. Consult your Sony sales representative when investigating use for medical, vehicle, nuclear power control or other special applications. Also, use the power supply that was designed not to exceed the optical power output specified at the absolute maximum ratings. -6- SLD1134VL Package Outline Unit: mm M-274 Reference Slot 0.4 1.0 0.5 90 3 1 2 0 5.6 - 0.025 4.4 MAX 3.7 MAX 1.0 MIN 1.2 0.1 Reference Plane 2 3 1 3 - 0.45 Optical Distance = 1.35 0.08 6.5 LD Chip & Photo Diode SONY CODE 2.6 MAX 0.5 MIN 1.26 0.25 Window Glass PCD 2.0 M-274 PACKAGE MASS 0.3g EIAJ CODE JEDEC CODE -7- Sony Corporation