2N7002T N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V(BR)DSS RDS(ON) ID TA = 25C 60V 7.5 @ VGS = 5V 115mA * * * * * * * * * Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Totally Lead Free, Full RoHS Compliant (Note 1) Halogen and Antimony Free. "Green" Device (Notes 2 and 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. * * * * * * * * DC-DC Converters Power management functions Battery Operated Systems and Solid-State Relays Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc * * Case: SOT523 Case Material: Molded Plastic. "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish annealed over Alloy 42 leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.002 grams (approximate) Drain SOT523 D Gate G S Source Top View Equivalent Circuit Top View Ordering Information (Note 4) Part Number 2N7002T-7-F 2N7002T-13-F 2N7002TQ-7-F 2N7002TQ-13-F Notes: Qualification Commercial Commercial Automotive Automotive Case SOT523 SOT523 SOT523 SOT523 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 3,000/Tape & Reel 10,000/Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free 2. Halogen and Antimony free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 3. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants 4. For packaging details, go to our website at http://www.diodes.com. Marking Information 72 Date Code Key Year Code Month Code 2005 S Jan 1 2006 T Feb 2 2N7002T Document number: DS30301 Rev. 14 - 2 Mar 3 72 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: T = 2006) M = Month (ex: 9 = September) YM 2007 U Apr 4 2008 V May 5 Jun 6 1 of 5 www.diodes.com 2009 W Jul 7 2010 X Aug 8 Sep 9 2011 Y Oct O 2012 Z Nov N Dec D April 2012 (c) Diodes Incorporated 2N7002T Maximum Ratings @TA = 25C unless otherwise specified Characteristic Drain-Source Voltage Drain-Gate Voltage RGS 1.0M Gate-Source Voltage Drain Current (Note 5) Symbol VDSS VDGR Units V V ID Value 60 60 20 40 115 73 800 Symbol Pd RJA Tj, TSTG Value 150 833 -55 to +150 Units mW C/W C Continuous Pulsed Continuous Continuous @ 100C Pulsed VGSS V mA Thermal Characteristics @TA = 25C unless otherwise specified Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Electrical Characteristics @TA = 25C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 7) Turn-On Delay Time Turn-Off Delay Time Notes: @ TC = 25C @ TC = 125C @ Tj = 25C @ Tj = 125C Symbol Min Typ Max Unit Test Condition BVDSS 60 V VGS = 0V, ID = 10A IDSS A VDS = 60V, VGS = 0V IGSS 1.0 500 10 nA VGS = 20V, VDS = 0V VGS(th) 1.0 2.0 7.5 13.5 V A mS VDS = VGS, ID = 250A VGS = 5.0V, ID = 0.05A VGS = 10V, ID = 0.5A VGS = 10V, VDS = 7.5V VDS =10V, ID = 0.2A RDS (ON) ID(ON) gFS 0.5 80 2.0 4.4 1.0 Ciss Coss Crss 22 11 2.0 50 25 5.0 pF pF pF VDS = 25V, VGS = 0V, f = 1.0MHz tD(ON) tD(OFF) 7.0 11 20 20 ns ns VDD = 30V, ID = 0.2A, RL = 150, VGEN = 10V, RGEN = 25 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6 .Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to production testing. 2N7002T Document number: DS30301 Rev. 14 - 2 2 of 5 www.diodes.com April 2012 (c) Diodes Incorporated 2N7002T VGS = 10V 0.9 ID , DRAIN-SOURCE CURRENT (A) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 1.0 VGS = 7.0V 0.8 0.7 VGS = 6.0V 0.6 VGS = 5.0V 0.5 VGS = 4.0V 0.4 0.3 VGS = 3.0V 0.2 0.1 0 0 VGS = 2.5V 1 2 4 3 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 On-Region Characteristics VGS = 3.0V 3 VGS = 4.0V 2 VGS = 5.0V 1.5 1.0 0.5 0 -50 f = 1MHz 50 40 30 Ciss Coss 10 Crss 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 5 Typical Capacitance 2N7002T Document number: DS30301 Rev. 14 - 2 2.0 1.5 1.0 0.5 75 100 125 150 -25 0 25 50 TJ, JUNCTION TEMPERATURE ( C) Fig. 4 On-Resistance Variation with Temperature RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 60 VGS = 10V ID = 500mA 2.5 0 -50 -25 50 75 100 125 150 0 25 TJ, JUNCTION TEMPERATURE ( C) Fig. 3 Gate Threshold Variation with Temperature 0 VGS = 10V 3.0 2.0 0 VGS = 7.0V 1 ID = 250A 20 VGS = 6.0V 0.6 0.2 0.4 1.0 0.8 ID, DRAIN-SOURCE CURRENT (A) Fig. 2 On-Resistance Variation with Gate Voltage and Drain-Source Current RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) VGS(th), GATE THRESHOLD VOLTAGE (V) 4 0 5 2.5 C, CAPACITANCE (pF) 5 30 3 of 5 www.diodes.com 5.0 4.5 4.0 3.5 3.0 2.5 ID = 50mA 2.0 1.5 1.0 0.5 0 0 10 2 4 6 8 VGS, GATE-SOURCE VOLTAGE (V) Fig. 6 On-Resistance vs. Gate-Source Voltage April 2012 (c) Diodes Incorporated 2N7002T Package Outline Dimensions A SOT523 Dim Min Max Typ A 0.15 0.30 0.22 B 0.75 0.85 0.80 C 1.45 1.75 1.60 D 0.50 G 0.90 1.10 1.00 H 1.50 1.70 1.60 J 0.00 0.10 0.05 K 0.60 0.80 0.75 L 0.10 0.30 0.22 M 0.10 0.20 0.12 N 0.45 0.65 0.50 0 8 All Dimensions in mm B C G H K M N J L D Suggested Pad Layout Y Z C X 2N7002T Document number: DS30301 Rev. 14 - 2 Dimensions Value (in mm) Z 1.8 X 0.4 Y 0.51 C 1.3 E 0.7 E 4 of 5 www.diodes.com April 2012 (c) Diodes Incorporated 2N7002T IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2012, Diodes Incorporated www.diodes.com 2N7002T Document number: DS30301 Rev. 14 - 2 5 of 5 www.diodes.com April 2012 (c) Diodes Incorporated