2N7002T
Document number: DS30301 Rev. 14 - 2 1 of 5
www.diodes.com April 2012
© Diodes Incorporated
2N7002T
N-CHANNEL ENHAN CEMENT MODE MOSFET
Product Summary
V(BR)DSS R
DS(ON) ID
T
A
= 25°C
60V 7.5Ω @ VGS = 5V 115mA
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
• DC-DC Converters
• Power management functions
• Battery Operated Systems and Solid-State Relays
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc
Features
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra-Small Surface Mount Package
• Totally Lead Free, Full RoHS Compliant (Note 1)
• Halogen and Antimony Free. "Green" Device (Notes 2 and 3)
• Qualified to AEC-Q101 Standards for High Reliability
M
echanical Data
• Case: SOT523
• Case Material: Molded Plastic. “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Weight: 0.002 grams (approximate)
Ordering Information (Note 4)
Part Number Qualification Case Packaging
2N7002T-7-F Commercial SOT523 3,000/Tape & Reel
2N7002T-13-F Commercial SOT523 10,000/Tape & Reel
2N7002TQ-7-F Automotive SOT523 3,000/Tape & Reel
2N7002TQ-13-F Automotive SOT523 10,000/Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free
2. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
3. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Date Code Key
Year 2005 2006 2007 2008 2009 2010 2011 2012
Code S T U V W X Y Z
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
SOT523
Top View E
q
uivalent Circuit Top View
Source
Gate
Drain
D
GS
72 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: T = 2006)
M = Month (ex: 9 = September)
72 YM
2N7002T
Document number: DS30301 Rev. 14 - 2 2 of 5
www.diodes.com April 2012
© Diodes Incorporated
2N7002T
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage VDSS 60 V
Drain-Gate Voltage RGS ≤ 1.0MΩ V
DGR 60 V
Gate-Source Voltage Continuous
Pulsed VGSS ±20
±40 V
Drain Current (Note 5) Continuous
Continuous @ 100°C
Pulsed
ID
115
73
800
mA
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Value Units
Total Power Dissipation (Note 5) Pd 150 mW
Thermal Resistance, Junction to Ambient R
θ
JA 833 °C/W
Operating and Storage Temperature Range Tj, TSTG -55 to +150 °C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage BVDSS 60 ⎯ ⎯ V VGS = 0V, ID = 10μA
Zero Gate Voltage Drain Current @ TC = 25°C
@ TC = 125°C IDSS ⎯ ⎯ 1.0
500 µA VDS = 60V, VGS = 0V
Gate-Body Leakage IGSS ⎯ ⎯ ±10 nA VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage VGS
(
th
)
1.0 ⎯ 2.0 V VDS = VGS, ID = 250μA
Static Drain-Source On-Resistance @ Tj = 25°C
@ T
j
= 125°C RDS (ON) ⎯ 2.0
4.4 7.5
13.5 Ω VGS = 5.0V, ID = 0.05A
VGS = 10V, ID = 0.5A
On-State Drain Current ID
(
ON
)
0.5 1.0 ⎯ A VGS = 10V, VDS = 7.5V
Forward Transconductance gFS 80 ⎯ ⎯ mS VDS =10V, ID = 0.2A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance Ciss ⎯ 22 50 pF VDS = 25V, VGS = 0V, f = 1.0MHz
Output Capacitance Coss ⎯ 11 25 pF
Reverse Transfer Capacitance Crss ⎯ 2.0 5.0 pF
SWITCHING CHARACTERISTICS (Note 7)
Turn-On Delay Time tD
(
ON
)
⎯ 7.0 20 ns VDD = 30V, ID = 0.2A,
RL = 150Ω, VGEN = 10V, RGEN = 25Ω
Turn-Off Delay Time tD
(
OFF
)
⎯ 11 20 ns
Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6 .Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.
2N7002T
Document number: DS30301 Rev. 14 - 2 3 of 5
www.diodes.com April 2012
© Diodes Incorporated
2N7002T
012345
V , DRAIN - SOURCE V O LTAGE (V)
Fig. 1 On-Region Characteristics
DS
0.2
0.1
0.4
0.3
0.5
0.6
0.7
0.8
0.9
I, D
R
AI
N
-S
O
U
R
C
E
C
U
R
R
E
N
T
(A)
D
1.0
0
V = 2.5V
GS
V = 3.0V
GS
V = 4.0V
GS
V = 5.0V
GS
V = 6.0V
GS
V = 7.0V
GS
V = 10V
GS
1
2
3
4
5
00.2
I , DRAIN-SOURCE CURRENT (A)
Fig. 2 On-Resistance V ariation with Gate Voltage
and Drai n-So ur ce Cur r ent
D
0.4 0.6 0.8 1.0
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-
R
ESIS
T
A
N
C
E
DS(ON)
()
Ω
V = 3.0V
GS
V = 4.0V
GS
V = .0V
GS
6V = .0V
GS
7V = V
GS
10
V = 5.0V
GS
0.5
1.5
2.5
0
1.0
2.0
-50 -25 025 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Fig. 3 Gate Threshold Variation with Temperature
J
°
V,
G
A
T
E
T
H
R
ES
H
O
LD V
O
L
T
A
G
E (V)
GS(th)
I = 250µA
D
0.5
1.5
2.5
R
D
R
AI
N
-S
O
U
R
C
E
ON-RESISTANCE (NORMALIZED)
DS(ON)
,
0
1.0
2.0
3.0
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Fig. 4 On-Resistance V ariation with Temperature
J
°
V = 10V
I = 500mA
GS
D
0 5 10 15 20 25 30
V , DRA I N-SOURCE V OLTAGE (V )
Fig. 5 T y pical Capacitance
DS
0
10
20
30
50
40
60
C
,
C
A
P
A
C
I
T
A
N
C
E (p
F
)
C
iss
C
oss
C
rss
f = 1MHz
02468
10
V , GA TE -SOURCE VOLTAGE (V)
Fig. 6 On-Resistance vs. Gate-Source Voltage
GS
0
0.5
2.0
3.0
2.5
4.5
4.0
3.5
5.0
R
D
R
AIN-S
O
U
R
C
E
O
N-
R
ESIS
T
AN
C
E
DS(ON),
()
Ω
1.5
1.0
I = 50mA
D
2N7002T
Document number: DS30301 Rev. 14 - 2 4 of 5
www.diodes.com April 2012
© Diodes Incorporated
2N7002T
Package Outline Dimensions
Suggested Pad Layout
SOT523
Dim Min Max Typ
A 0.15 0.30 0.22
B 0.75 0.85 0.80
C 1.45 1.75 1.60
D ⎯ ⎯ 0.50
G 0.90 1.10 1.00
H 1.50 1.70 1.60
J 0.00 0.10 0.05
K 0.60 0.80 0.75
L 0.10 0.30 0.22
M 0.10 0.20 0.12
N 0.45 0.65 0.50
α 0° 8° ⎯
All Dimensions in mm
Dimensions Value (in mm)
Z 1.8
X 0.4
Y 0.51
C 1.3
E 0.7
A
M
JL
D
BC
H
K
G
N
XE
Y
C
Z
2N7002T
Document number: DS30301 Rev. 14 - 2 5 of 5
www.diodes.com April 2012
© Diodes Incorporated
2N7002T
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