MCC Features * * * * 2SA1015 omponents 20736 Marilla Street Chatsworth !"# $ % !"# Capable of 0.4Watts of Power Dissipation. Collector-current 0.15A Collector-base Voltage 50V Operating and storage junction temperature range: -55OC to +150 OC Pin Configuration Bottom View E C PNP Silicon Plastic-Encapsulate Transistor TO-92 B A E Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol Parameter Min Max Units 50 --- Vdc 50 --- Vdc --- 0.1 uAdc --- 0.1 uAdc 70 400 --- --- 0.3 Vdc --- 1.1 Vdc --- 1.45 Vdc --- MHz B OFF CHARACTERISTICS V(BR)CEO V(BR)CBO ICBO IEBO Collector-Emitter Breakdown Voltage (IC=0.1mAdc, IB =0) Collector-Base Breakdown Voltage (IC=100uAdc, IE =0) Collector Cutoff Current (VCB=50Vdc, IE =0) Emitter Cutoff Current (VEB =5.0Vdc, IC=0) C ON CHARACTERISTICS hFE DC Current Gain (IC=2.0mAdc, V CE=6.0Vdc) Collector-Emitter Saturation Voltage (IC=100mAdc, IB =10mAdc) Base-Emitter Saturation Voltage (IC=100mAdc, IB =10mAdc) Base-Emitter Voltage (IE =310mAdc) VCE(sat) VBE(sat) VBE D SMALL-SIGNAL CHARACTERISTICS fT Transistor Frequency (IC=1.0mAdc, V CE=10Vdc, f=30MHz) 80 G DIMENSIONS INCHES CLASSIFICATION OF HFE (1) Rank Range O 70-140 Y 120-240 GR 200-400 DIM A B C D E G MIN .175 .175 .500 .016 .135 .095 MAX .185 .185 --.020 .145 .105 MM MIN 4.45 4.46 12.7 0.41 3.43 2.42 MAX 4.70 4.70 --0.63 3.68 2.67 NOTE www.mccsemi.com Revision: 2 2003/06/30