2SK3491
No.6959-1/4
www.semiconductor-sanyo.com/network
SANYO Semiconductors
DATA SHEET
30409PB MS IM / 52101 TS IM TA-3255
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
'
s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
'
s products or
equipment.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
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instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
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2SK3491
Features
•Low ON-resistance.
•Low Qg.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS 600 V
Gate-to-Source Voltage VGSS ±30 V
Drain Current (DC) ID1.0 A
Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 4.0 A
Allowable Power Dissipation PD1.0 W
Tc=25°C20W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 600 V
Zero-Gate Voltage Drain Current IDSS VDS=600V, VGS=0V 100 μA
Gate-to-Source Leakage Current IGSS VGS=±30V, VDS=0V ±100 nA
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 2.5 3.5 V
Forward T ransfer Admittance ⏐yfs⏐VDS=10V, ID=0.5A 430 850 mS
Static Drain-to-Source On-State Resistance
RDS(on) VGS=10V, ID=0.5A 8.5 11 Ω
Input Capacitance Ciss VDS=20V, f=1MHz 135 pF
Output Capacitance Coss VDS=20V, f=1MHz 40 pF
Reverse T ransfer Capacitance Crss VDS=20V, f=1MHz 20 pF
Marking : K3491 Continued on next page.
Ordering number : EN6959A
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
2SK3491
No.6959-2/4
Continued from preceding page. Ratings
Parameter Symbol Conditions min typ max Unit
Total Gate Charge Qg VDS=200V, VGS=10V, ID=1.0A 6 nC
Turn-ON Delay Time td(on) See specified Test Circuit. 8 ns
Rise T ime trSee specified Test Circuit. 7 ns
Turn-OFF Delay Time td(off) See specified Test Circuit. 17 ns
Fall T ime tfSee specified Test Circuit. 30 ns
Diode Forward Voltage VSD IS=1.0A, VGS=0V 0.83 1.2 V
Package Dimensions Package Dimensions
unit : mm (typ) unit : mm (typ)
7518-004 7003-004
Switching Time Test Circuit
PW=1μs
D.C.≤0.5%
P.G RGS
50Ω
G
S
ID=0.5A
RL=400Ω
VDD=200V
VIN VOUT
D
2SK3491
10V
0V
VIN
6.5
5.0
2.3
0.5
12
4
3
0.85
0.7
1.2
0.6 0.5
2.3 2.3
7.07.5
1.6
0.8
5.5 1.5
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP
6.5
5.0
2.3
0.5
12
4
3
0.85
0.6
0.5
1.2
1.2
2.3 2.3
7.0
2.5
5.5 1.5
0.8
0 to 0.2
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP-FA
2SK3491
No.6959-3/4
⏐yfs⏐ -- ID
Forward T ransfer Admittance, ⏐yfs⏐ -- S
Drain Current, ID -- A
VGS(off) -- Tc
Cutoff Voltage, VGS(off) -- V
Case Temperature, Tc -- °C
IS -- VSD
Source Current, IS -- A
Diode Forward Voltage, VSD -- V
SW Time -- ID
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
RDS(on) -- Tc
Case Temperature, Tc -- °C
0.1 23 57
1.0 23
IT02870
VDS=10V
0.1
1.0
2
3
5
7
2
3
7
0
1
2
3
4
5
--50 0 50 100 150
IT02869
VDS=10V
ID=1mA
0.001
2
5
7
2
0.01
0.1
3
5
7
3
5
7
2
1.0
3
5
7
2
10
3
0.4 0.6 0.8 1.0 1.2 1.40.20
IT02871
VGS=0V
Tc=75°C
25
°
C
--25
°
C
1.0
10
2
5
7
100
3
2
5
7
3
2
1000
3
5
7
23 57
1.00.1 23
IT02872
VDD=200V
VGS=10V
td(on)
tr
td(off)
tf
75
°
C
25°C
Tc= --25°C
0
5
10
15
20
25
0 2 4 6 8 101214161820
IT02867
0
2
4
6
8
10
12
14
16
18
20
--50 --25 0 25 50 75 100 125 150
IT02868
ID=1.0A
0.5A0.1A Tc=25°C
Switching Time, SW Time -- ns
Drain Current, ID -- A
ID=0.5A
VGS=10V
ID -- VGS
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
ID -- VDS
Drain Current, ID -- A
Drain-to-Source Voltage, VDS -- V
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0 5 10 15 20
0
IT02865 IT02866
VDS=10V
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0 5 10 15 20
Tc= --25°C
25°C
75°C
VGS=4.5V
5.0V
5.5V
6.0V
20.0V
10.0V
2SK3491
No.6959-4/4
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
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limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
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intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
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without the prior written consent of SANYO Semiconductor Co.,Ltd.
PS
0 20 40 60 80 100 120 140 160
PD -- Tc
Case Temperature, Tc -- °C
Allowable Power Dissipation, PD -- W
IT02875
0
5
10
15
20
25
30
0 20 40 60 80 100 120 140 160
PD -- Ta
Amibient Temperature, Ta -- °C
Allowable Power Dissipation, PD -- W
IT02876
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
Ciss, Coss, Crss -- VDS
Ciss, Coss, Crss -- pF
Drain-to-Source Voltage, VSD -- V
1.0
3
7
2
5
10
3
7
2
5
100
3
7
2
5
1000
0 5 10 15 20 25 30 35
IT02873
f=1MHz
Ciss
Coss
Crss
A S O
Drain Current, ID -- A
Drain-to-Source Voltage, VDS -- V
0.1
1.0
5
7
3
2
10
5
7
3
2
0.01
5
7
3
2
23 57
1001.0 23 57
10 23 1000
57
IT02874
DC operation
10ms
1ms
100
μ
s
100ms
<10μs
IDP=4A
ID=1A
Operation in this area
is limited by RDS(on).
Tc=25°C
Single pulse
This catalog provides information as of March, 2009. Specifications and information herein are subject
to change without notice.
Note on usage : Since the 2SK3491 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
